UNISONIC TECHNOLOGIES CO., LTD
UF740
10A, 400V, 0.55Ω N-CHANNEL
POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
1
TO-220
1
Power MOSFET
TO-263
FEATURES
* 10A, 400V, R
DS(ON)
(0.55Ω)
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
1
TO-220F
1
TO-220F2
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF740L-TA3-T
UF740G-TA3-T
UF740L-TF2-T
UF740G-TF2-T
UF740L-TF3-T
UF740G-TF3-T
UF740L-TQ2-T
UF740G-TQ2-T
UF740L-TQ2-R
UF740G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F2
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-078,E
UF740
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, Unless Otherwise Specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (T
J
=25°C~125°C)
V
DS
400
V
Drain to Gate Voltage (R
GS
= 20kΩ) (T
J
=25°C~125°C)
V
DGR
400
V
Gate to Source Voltage
V
GS
±20
V
Continuous
I
D
10
A
Drain Current
T
C
= 100°C
I
D
6.3
A
Pulsed
I
DM
40
A
125
TO-220/TO-263
W
Power Dissipation
TO-220F
44
TO-220F2
46
P
D
TO-220/TO-263
1.0
Derating above 25°C
TO-220F
0.35
W/°C
TO-220F2
0.37
Single Pulse Avalanche Energy Rating(Note3)
E
AS
520
mJ
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220/TO-263
TO-220F
TO-220F2
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
1.0
2.86
2.72
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, Unless Otherwise Specified.)
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
SYMBOL
TEST CONDITIONS
BV
DSS
V
GS
= 0V, I
D
= 250μA
V
GS(THR)
V
GS
= V
DS
, I
D
= 250μA
I
D(ON)
V
DS
>I
D(ON)
x R
DS(ON)MAX
, V
GS
=10V
V
DS
= Rated BV
DSS
, V
GS
= 0V
I
DSS
V
DS
=0.8 x Rated BV
DSS
, V
GS
=0V,T
J
=125°C
I
GSS
V
GS
= ±20V
R
DS(ON)
V
GS
= 10V, I
D
= 5.2A (Note 1)
g
FS
V
DS
≥
50V, I
D
= 5.2A (Note 1)
t
DLY(ON)
V
DD
= 200V, I
D
≈
10A,
t
R
R
GS
= 9.1Ω, R
L
= 20Ω, V
GS
= 10V
t
DLY(OFF)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
t
F
Q
G(TOT)
Q
GS
Q
GD
C
ISS
C
OSS
C
RSS
V
GS
= 10V, I
D
= 10A, I
G(REF)
= 1.5mA,
V
DS
= 0.8 x Rated BV
DSS
Gate Charge is Essentially Independent of
Operating Temperature
V
GS
= 0V, V
DS
=25V, f = 1.0MHz
MIN TYP MAX UNIT
400
V
2.0
4.0
V
10
A
25
μA
250
μA
±500 nA
0.47 0.55
Ω
5.8 8.9
S
15
21
ns
25
41
ns
52
75
ns
25
36
ns
41
6.5
23
1250
300
80
63
nC
nC
nC
pF
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-078,E
UF740
ELECTRICAL CHARACTERISTICS(Cont.)
TEST CONDITIONS
Measured From the Modified MOSFET
Contact Screw on Symbol Showing the
Internal Devices
Tab to Center of
Inductances
Die
Internal Drain Inductance
L
D
Measured From the
Drain Lead, 6mm
(0.25in) From
Package to Center
of Die
Measured From the
Source Lead, 6mm
(0.25in) From
Internal Source Inductance
L
S
Header to Source
Bonding Pad
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
V
SD
T
J
= 25°C, I
SD
= 10A, V
GS
= 0V (Note 1)
Modified MOSFET
Continuous Source to Drain
I
S
Symbol Showing
Current
the Integral Reverse
P-N Junction Diode
Pulse Source to Drain Current
I
SM
(Note 2)
Reverse Recovery Time
t
rr
T
J
= 25°C, I
SD
= 10A, dI
SD
/dt = 100A/μs
Reverse Recovery Charge
Q
RR
T
J
= 25°C, I
SD
= 10A, dI
SD
/dt = 100A/μs
Notes:
1. Pulse Test: Pulse width
≤
300μs, Duty Cycle≤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. (V
DD
=50V, starting T
J
=25°C, L=9.1mH, R
G
=25Ω, peak I
AS
= 10A)
PARAMETER
SYMBOL
Power MOSFET
MIN TYP MAX UNIT
3.5
nH
4.5
nH
7.5
nH
2.0
10
V
A
40
A
170
1.6
390
4.5
790
8.2
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-078,E
UF740
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
V
DS
R
L
90%
10%
90%
R
G
V
DD
V
GS
D.U.T.
0
V
GS
10%
0
50%
PULSE WIDTH
50%
t
D(ON)
t
ON
Switching Time Test Circuit
t
R
t
D(OFF)
t
F
t
OFF
Resistive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-078,E
UF740
TYPICAL PERFORMANCE CUVES
(Unless Otherwise Specified)
Power MOSFET
Drain Current, I
D
(A)
Saturation Characteristics
15
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
Drain Current, I
D
(A)
Transfer Characteristics
100
Drain to Source Current, I
DS (ON)
(A)
V
GS
=6.0V
V
GS
=5.5V
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
V
DS
≥50V
V
GS
=10V
Drain Current, I
D
(A)
12
9
10
V
GS
=5.0V
6
3
0
V
GS
=4.5V
V
GS
=4.0V
0
2
4
6
8
10
1
T
J
= 150℃
T
J
= 25℃
0.1
0
2
4
6
8
10
Drain to Source Voltage, V
DS
(V)
Gate to Source Voltage, V
SD
(V)
Normalized Drain to Source
Breakdown Voltage
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Capacitance, C (pF)
5 of 6
QW-R502-078,E
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
