UNISONIC TECHNOLOGIES CO., LTD
UF640
18A, 200V, 0.18OHM,
N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
These kinds of n-channel power MOSFET field effect transistor
have low conduction power loss, high input impedance, and high
switching speed, Linear Transfer Characteristics, so can be use in
a variety of power conversion applications.
The
UF640
suitable for resonant and PWM converter
topologies.
FEATURES
* R
DS(ON)
< 0.18Ω @ V
GS
=10V, I
D
=10A
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (C
RSS
= typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R502-066.I
UF640
ORDERING INFORMATION
Package
SOT-223
TO-220
TO-220F1
TO-220F2
TO-220F
TO-252
TO-262
TO-262
TO-263
TO-263
Ordering Number
Lead Free
Halogen-Free
-
UF640G-AA3-R
UF640L-TA3-T
UF640G-TA3-T
UF640L-TF1-T
UF640G-TF1-T
UF640L-TF2-T
UF640G-TF2-T
UF640L-TF3-T
UF640G-TF3-T
UF640L-TN3-R
UF640G-TN3-R
UF640L-T2Q-T
UF640G-T2Q-T
UF640L-T2Q-R
UF640G-T2Q-R
UF640L-TQ2-T
UF640G-TQ2-T
UF640L-TQ2-R
UF640G-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
Tube
Tape Reel
MARKING
SOT-223
TO-220 / TO-220F / TO-220F1
TO-220F2 / TO-252 / TO-262 / TO-263
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QW-R502-066.I
UF640
ABSOLUTE MAXIMUM RATING
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
200
V
Drain-Gate Voltage (R
GS
=20kΩ)
V
DGR
200
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
I
D
18
A
Pulsed Drain Current (Note 2)
I
DM
72
A
Single Pulse Avalanche Energy Rating (Note 2)
E
AS
242
mJ
SOT-223
66
TO-220
123
Maximum Power
TO-220F
40
P
D
W
Dissipation
TO-220F1/TO-220F2
42
TO-252
83
TO-262/TO-263
139
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=3.37mH, V
DD
=50V, R
G
=25Ω, peak I
AS
=12A, starting T
J
=25°C
3. Pulse width limited by T
J(MAX)
THERMAL DATA
SYMBOL
RATINGS
57
62.5
110
1.8
1.01
3.1
2.9
1.5
0.9
UNIT
PARAMETER
SOT-223
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2
TO-262/TO-263
TO-252
SOT-223
TO-220
TO-220F
Junction to Case
TO-220F1/TO-220F2
TO-252
TO-262/TO-263
θ
JA
°C/W
θ
JC
°C/W
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QW-R502-066.I
UF640
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(THR)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G(TOT)
Q
GS
Q
GD
TEST CONDITIONS
I
D
=250μA, V
GS
=0V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
GS
= ±20V
V
GS
=V
DS
, I
D
=250μA
V
GS
=10V, I
D
=10A
MIN
200
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Power MOSFET
TYP
MAX UNIT
V
μA
nA
V
Ω
pF
pF
pF
52
72
152
104
110
ns
ns
ns
ns
nC
nC
nC
2.0
18
V
A
25
±100
2
0.14
805
240
46
40
58
127
86
89
9
24
4
0.18
V
DS
=25V, V
GS
=0V, f=1MHz
V
DD
=100V,I
D
≈18A,
R
G
=9.1Ω,R
L
=5.4Ω,
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
V
GS
=10V, I
D
≈18A,
V
DS
=0.8 x Rated
BV
DSS
Gate Charge is Essentially
Independent of Operating
Temperature I
G(REF)
= 1.5mA
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note)
V
SD
T
J
=25°C, I
S
=18A, V
GS
=0V,
Continuous Source Current
Integral Reverse p-n Junction
I
S
Diode in the MOSFET
(body diode)
Drain
Pulse Source Current (body diode)
(Note)
I
SM
Gate
Sourse
72
A
Reverse Recovery Time
t
rr
T
J
=25°C, I
S
=18A, dI
S
/dt=100A/μs
Reverse Recovery Charge
Q
RR
T
J
=25°C, I
S
=18A, dI
S
/dt=100A/μs
Note: Pulse Test: Pulse width
≤
300μs, duty cycle
≤
2%.
120
1.3
240
2.8
530
5.6
ns
μC
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QW-R502-066.I
UF640
Power MOSFET
TEST CIRCUIT
V
DS
R
L
0
V
DD
V
GS
D.U.T.
90%
10%
90%
R
G
V
GS
10%
0
50%
PULSE WIDTH
50%
t
D(ON)
t
ON
Fig.3 Switching Time Test Circuit
t
R
t
D(OFF)
t
F
t
OFF
Fig.4 Resistive Switching Waveforms
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QW-R502-066.I
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