UNISONIC TECHNOLOGIES CO., LTD
UF601
0.185A, 600V N-CHANNEL
DEPLETION-MODE POWER
MOSFET
DESCRIPTION
Power MOSFET
The UTC
UF601
is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed.
FEATURES
* R
DS(ON)
< 120Ω @ V
GS
=0V, I
D
=3mA
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
UF601G-AA3-R
UF601G-AE3-R
Pin Assignment: G: Gate D: Drain
Package
SOT-223
SOT-23
S: Source
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
Note:
MARKING
SOT-223
SOT-23
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-699.H
UF601
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
SYMBOL
V
DSS
V
DGX
V
GSS
I
D
I
DM
RATINGS
UNIT
600
V
600
V
±20
V
0.185
A
Continuous
Drain Current
Pulsed
0.740
A
SOT-223
0.8
W
Power Dissipation
P
D
SOT-23
0.5
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. T
J
=+25°C~+150°C
PARAMETER
Drain-Source Voltage (Note 2)
Drain-Gate Voltage (Note 2)
Gate-Source Voltage
THERMAL DATA
PARAMETER
SYMBOL
SOT-223
SOT-23
θ
JA
RATINGS
150
250
UNIT
°C/W
°C/W
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
MIN TYP MAX UNIT
600
0.1
+100
-100
-2.7
7.0
60
53
3000
2.6
7.6
4
0.4
42
20
80
300
1.4
-1.5
120
V
μA
nA
nA
V
mA
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=-5V
Drain-Source Leakage Current
I
D(OFF)
V
DS
=600V, V
GS
=-5V
Forward
V
GS
=+20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate to Source Cut Off Voltage
V
GS(OFF)
V
DS
=3V, I
D
=8µA
Drain-Source Leakage Current
I
DSS
V
DS
=25V, V
GS
=0V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=0V, I
D
=3mA
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=-5~5V, V
DS
=30V,
Gate to Source Charge
Q
GS
I
D
=5mA
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
GS
=-5~5V, V
DD
=30V,
I
D
=5mA, R
G
=20Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
SD
=3.0mA, V
GS
=-10V
Note: 1. Repetitive rating, pulse width limited by maximum junction temperature
2. Pulse width≤380μs; duty cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-699.H
UF601
Power MOSFET
TYPICAL CHARACTERISTICS
TR
V
DD
=30V ,I
D
=5mA, R
G
=20Ω
TF
V
DD
=30V ,I
D
=5mA, R
G
=20Ω
10V
/5V
0
-10V
/-5V
0
200
Time (40ns/div)
400
10V
/5V
0
-10V
/-5V
0
1000
Time (200ns/div)
2000
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-699.H
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