UNISONIC TECHNOLOGIES CO., LTD
UF540
27A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UF540
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide the
customers with a minimum on-state resistance and high switching
speed.
The UTC
UF540
is suitable for AC&DC motor controls and
switching power supply, etc
FEATURES
* R
DS(on)
< 85mΩ @ V
GS
= 10 V, I
D
=15A
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
Ordering Number
Lead Free
Halogen Free
UF540L-TA3-T
UF540G-TA3-T
UF540L-TF3-T
UF540G-TF3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
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QW-R502-715.C
UF540
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DSS
V
GSS
PARAMETER
Drain-Source Voltage (Note 2)
Gate-Source Voltage
RATINGS
UNIT
100
V
±20
V
T
C
=25°C
27
A
Continuous
I
D
Drain Current
T
C
=100°C
17
A
108
A
Pulsed
I
DM
TO-220
125
W
Power Dissipation (T
C
=25°C)
P
D
TO-220F
50
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. T
J
= +25~+150°C
THERMAL DATA
PARAMETER
SYMBOL
TO-220
TO-220F
θ
JC
RATINGS
1.0
2.46
UNIT
°C/W
°C/W
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
MIN TYP MAX UNIT
100
V
250 µA
+500 nA
-500 nA
4.0
85
1680
250
40
90
120
300
145
100
12
30
2.0
300
2.5
27
108
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
A
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=100V, V
GS
=0V
Forward
V
GS
=+20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=15A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
V
DD
=30V, I
D
=0.5A, V
GS
=10V,
Rise Time
t
R
R
GEN
=25Ω (Fig.1, 2)
Turn-OFF Delay Time
t
D(OFF)
(Note 2)
Fall-Time
t
F
Total Gate Charge
Q
G
V
DD
=80V, I
D
=16A, V
GS
=10V,
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=27A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
S
=4.0A, dI
S
/dt=25A/µs
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Notes: 1. Pulse width limited by T
J
.
2. Switching time measurements performed on LEM TR-58 Test equipment.
2.0
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www.unisonic.com.tw
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QW-R502-715.C
UF540
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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QW-R502-715.C
UF540
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
300
Drain Current, I
D
(µA)
250
200
150
100
50
0
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, I
D
(µA)
200
150
100
50
0
0
0
25
75
100 125
50
Drain-Source Breakdown Voltage, BV
DSS
(V)
0.5
1.5
2
1
2.5
Gate Threshold Voltage, V
TH
(V)
3
20
16
12
8
4
Drain-Source On-State Resistance
Characteristics
Drain Current vs. Source to Drain Voltage
20
16
12
8
4
V
GS
=10V, I
D
=15A
V
GS
=10V, I
D
=2A
0
0
0.4
0.2
0.1
0.3
Drain to Source Voltage, V
DS
(V)
0.5
0
0
0.2
0.4 0.6
0.8 1.0 1.2
Source to Drain Voltage, V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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