UNISONIC TECHNOLOGIES CO., LTD
UF3055
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
DESCRIPTION
As an N-channel enhancement mode power MOSFET, the UTC
UF3055
is designed for low voltage, high speed switching
applications in power supplies, converters and power motor controls
and bridge circuits.
FEATURES
* R
DS(ON)
<110
mΩ
@V
GS
=10V
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
UF3055L-TN3-R
UF3055G-TN3-R
Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-443.a
UF3055
Preliminary
(T
C
=25°C, unless otherwise noted)
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
V
DSS
60
V
Drain Gate Voltage (R
GS
= 10MΩ )
V
DGR
60
V
Continuous
±20
V
Gate Source Voltage
V
GSS
Non-Repetitive (t
P
≤10
ms)
±30
V
Continuous Drain Current (T
a
= 25°C)
I
D
3.0
A
Pulsed Drain Current (t
P
≤10
µs)
I
DM
9.0
A
Single Pulsed Avalanche Energy (Note 2)
E
AS
74
mJ
Power Dissipation (T
a
= 25°C)
P
D
2
W
Junction Temperature
T
J
175
°C
Strong Temperature
T
STG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. T
J
= 25°C ,V
DD
= 25V, V
GS
= 10V, I
L
= 7.0A, L = 3.0mH, V
DS
= 60V
THERMAL DATA
PARAMETER
Junction to Ambient (Note)
SYMBOL
RATINGS
θ
JA
62.5
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise noted)
TYP
68
66
MAX
UNIT
°C/W
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain Source Breakdown Voltage (Note 1)
V
GS
= 0V, I
D
=250µA
60
BV
DSS
Temperature Coefficient (Positive)
Drain-Source Leakage Current
I
DSS
V
GS
=0V, V
DS
=60V
Gate-Source Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
=0V
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=250µA
2.0
V
GS(TH)
Temperature Coefficient (Negative)
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10 V, I
D
=1.5A
Static Drain-to-Source On-Resistance
V
DS(ON)
V
GS
=10 V, I
D
=3A
Forward Tran conductance
g
FS
V
DS
=8.0V, I
D
=1.7A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0 V, V
DS
=25 V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
(Note 2)
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=10V, V
DD
=30V, I
D
=3.0A ,
Turn-OFF Delay Time
t
D(OFF)
R
G
=9.1Ω (Note 1)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=48V, I
D
=3.0A
Gate-Source Charge
Q
GS
(Note 1)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=3.0A
t
RR
Body Diode Reverse Recovery Time
V
GS
=0V, I
S
=3.0A,
t
A
dI/dt=100 A/μs (Note 1)
t
B
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width
≤300
s, Duty Cycle
≤2.0%.
2. Switching characteristics are independent of operating junction temperatures.
V
mV/°C
1.0
µA
±100
nA
V
mV/°C
110
mΩ
0.40
V
M
455
50
155
20
30
45
30
22
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
ns
ns
nC
4.0
3.0
6.6
88
0.27
3.2
324
35
110
9.4
14
21
13
10.6
1.9
4.2
0.89
30
22
8.6
0.04
1.0
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-443.a
UF3055
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-443.a
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