N-CHANNEL ENHANCEMENT MODE
UTD351 | UTD351-AE3-R | UTD351L-AE3-R | |
---|---|---|---|
描述 | N-CHANNEL ENHANCEMENT MODE | N-CHANNEL ENHANCEMENT MODE | N-CHANNEL ENHANCEMENT MODE |
包装说明 | - | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
针数 | - | 3 | 3 |
Reach Compliance Code | - | compli | compli |
ECCN代码 | - | EAR99 | EAR99 |
其他特性 | - | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | - | 30 V | 30 V |
最大漏极电流 (ID) | - | 1.4 A | 1.4 A |
最大漏源导通电阻 | - | 0.16 Ω | 0.16 Ω |
FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | - | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | - | 1 | 1 |
端子数量 | - | 3 | 3 |
工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | - | RECTANGULAR | RECTANGULAR |
封装形式 | - | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | - | N-CHANNEL | N-CHANNEL |
表面贴装 | - | YES | YES |
端子形式 | - | GULL WING | GULL WING |
端子位置 | - | DUAL | DUAL |
晶体管应用 | - | SWITCHING | SWITCHING |
晶体管元件材料 | - | SILICON | SILICON |
Base Number Matches | - | 1 | 1 |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved