6 A, SILICON, RECTIFIER DIODE
参数名称 | 属性值 |
厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD |
零件包装代码 | SOT |
包装说明 | SMALL OUTLINE, R-PDSO-G8 |
针数 | 8 |
Reach Compliance Code | compli |
ECCN代码 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 30 V |
最大漏极电流 (ID) | 11.6 A |
最大漏源导通电阻 | 0.018 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G8 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 8 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 46.4 A |
表面贴装 | YES |
端子面层 | TIN LEAD |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
UT4410-S08-T | UT4410 | UT4410-S08-R | UT4410G-S08-T | UT4410L-S08-R | UT4410L-S08-T | |
---|---|---|---|---|---|---|
描述 | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE |
厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
零件包装代码 | SOT | - | SOT | SOT | SOT | SOT |
包装说明 | SMALL OUTLINE, R-PDSO-G8 | - | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 |
针数 | 8 | - | 8 | 8 | 8 | 8 |
Reach Compliance Code | compli | - | compliant | compliant | compli | compliant |
ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 30 V | - | 30 V | 30 V | 30 V | 30 V |
最大漏极电流 (ID) | 11.6 A | - | 11.6 A | 11.6 A | 11.6 A | 11.6 A |
最大漏源导通电阻 | 0.018 Ω | - | 0.018 Ω | 0.018 Ω | 0.018 Ω | 0.018 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G8 | - | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
元件数量 | 1 | - | 1 | 1 | 1 | 1 |
端子数量 | 8 | - | 8 | 8 | 8 | 8 |
工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 46.4 A | - | 46.4 A | 46.4 A | 46.4 A | 46.4 A |
表面贴装 | YES | - | YES | YES | YES | YES |
端子形式 | GULL WING | - | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | - | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved