DIGITAL TRANSISTORS
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD |
| 零件包装代码 | TO-92 |
| 包装说明 | CYLINDRICAL, O-PBCY-T3 |
| 针数 | 3 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 20 |
| JEDEC-95代码 | TO-92 |
| JESD-30 代码 | O-PBCY-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.625 W |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 250 MHz |
| DTC123EL-T92-B | RFPA2545PCK-411 | DTC123EL-AL3-R | DTC123EL-AN3-R | DTC123EL-T92-K | DTC123E_11 | |
|---|---|---|---|---|---|---|
| 描述 | DIGITAL TRANSISTORS | Broadband 4W GaAs HBT Power Amplifier 1400MHz to 2700MHz | DIGITAL TRANSISTORS | DIGITAL TRANSISTORS | DIGITAL TRANSISTORS | DIGITAL TRANSISTORS |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 | 符合 | - |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - |
| 包装说明 | CYLINDRICAL, O-PBCY-T3 | - | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | CYLINDRICAL, O-PBCY-T3 | - |
| 针数 | 3 | - | 3 | 3 | 3 | - |
| Reach Compliance Code | compli | - | compli | compli | compli | - |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | - |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 | - | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | - |
| 最大集电极电流 (IC) | 0.1 A | - | 0.1 A | 0.1 A | 0.1 A | - |
| 集电极-发射极最大电压 | 50 V | - | 50 V | 50 V | 50 V | - |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | - | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | - |
| 最小直流电流增益 (hFE) | 20 | - | 20 | 20 | 20 | - |
| JESD-30 代码 | O-PBCY-T3 | - | R-PDSO-G3 | R-PDSO-G3 | O-PBCY-T3 | - |
| 元件数量 | 1 | - | 1 | 1 | 1 | - |
| 端子数量 | 3 | - | 3 | 3 | 3 | - |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装形状 | ROUND | - | RECTANGULAR | RECTANGULAR | ROUND | - |
| 封装形式 | CYLINDRICAL | - | SMALL OUTLINE | SMALL OUTLINE | CYLINDRICAL | - |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 极性/信道类型 | NPN | - | NPN | NPN | NPN | - |
| 最大功率耗散 (Abs) | 0.625 W | - | 0.2 W | 0.15 W | 0.625 W | - |
| 表面贴装 | NO | - | YES | YES | NO | - |
| 端子形式 | THROUGH-HOLE | - | GULL WING | GULL WING | THROUGH-HOLE | - |
| 端子位置 | BOTTOM | - | DUAL | DUAL | BOTTOM | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | - |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | - |
| 标称过渡频率 (fT) | 250 MHz | - | 250 MHz | 250 MHz | 250 MHz | - |
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