TN2124
TN2124
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
240V
R
DS(ON)
(max)
15Ω
V
GS(th)
(max)
2.0V
Order Number / Package
TO-243AA**
TN2124N8
TO-236AB*
TN2124K1
Product marking for SOT-23:
N1C❋
where
❋
= 2-week alpha date code
* Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
** Prodcut supplied on 2000 piece carrier tape reels.
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
D
Package Options
Drain
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
08/30/99
G
Gate
BV
DSS
BV
DGS
±
20V
Source
D
S
TO-236AB
(SOT-23)
top view
TO-243AA
(SOT-89)
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and
other Supertex products, refer to the Supertex 1998 Databook.
1
TN2124
Thermal Characteristics
Package
TO-236AB
TO-243AA
†
I
D
(continuous)*
134mA
230mA
I
D
(pulsed)
250mA
1.1A
Power Dissipation
@ T
A
= 25
°
C
0.36W
1.6W
†
θ
jc
°
C/W
200
15
θ
ja
°
C/W
350
78
†
I
DR
*
134mA
230mA
I
DRM
250mA
1.1A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board. 25mmx25mmx1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
0.1
Min
240
0.8
2.0
-5.5
100
1
100
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Typ
Max
Unit
V
V
mV/°C
nA
µA
µA
mA
Conditions
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
I
D
= 1mA, V
GS
= V
DS
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 3V, I
D
= 25mA
V
GS
= 4.5V, I
D
= 120mA
I
D
= 120mA, V
GS
= 4.5V
V
DS
= 25V, I
D
= 120mA
V
GS
= 0V, V
DS
= 25V, f = 1MHz
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
140
30
15
0.7
100
170
38
9
3
4
2
7
9
50
15
5
7
5
10
12
1.8
400
1.0
Ω
Ω
%/°C
m
pF
ns
V
ns
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
Ω
V
DD
= 25V
I
D
= 140mA
R
GEN
= 25Ω
I
SD
= 120mA, V
GS
= 0V
I
SD
= 120mA, V
GS
= 0V
V
DD
R
L
OUTPUT
D.U.T.
TN2124
Typical Performance Curves
Output Characteristics
2.0
1.0
Saturation Characteristics
1.6
0.8
VGS = 10V
8V
6V
4V
3V
I
D
(amperes)
8V
6V
0.8
4V
I
D
(amperes)
1.2
VGS = 10V
0.6
0.4
3V
0.4
2V
0
0
10
20
30
40
50
0
0
2
4
6
8
10
0.2
2V
V
DS
(volts)
Transconductance vs. Drain Current
1.0
VDS= 25V
SOT-89
0.8
1.6
2.0
V
DS
(volts)
Power Dissipation vs. Temperature
G
FS
(siemens)
0.4
-55°C
P
D
(watts)
0.6
1.2
0.8
0.2
TA= 125°C
0
0
0.2
0.4
0.6
0.8
1.0
25°C
0.4
SOT-23
0.0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
10
TA= 25°C
1.0
T
A
(
°
C)
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
SOT-23
T A = 25°C
P D = 0.36W
SOT-89 (pulsed)
I
D
(amperes)
1.0
SOT-23 (pulsed)
SOT-89
0.1
0.6
0.4
SOT-89
TA = 25°C
PD = 1.6W
0.2
SOT-23 (DC)
0.01
0
10
100
1000
0
0.001
0.01
0.1
1
10
V
DS
(volts)
t
p
(seconds)
3
TN2124
Typical Performance Curves
BV
DSS
Variation with Temperature
50
1.1
40
On-Resistance vs. Drain Current
V
GS
= 3V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
30
1.0
20
V
GS
= 4.5V
10
0.9
0
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1.0
T
j
(
°
C)
Transfer Characteristics
1.0
1.4
0.8
I
D
(amperes)
V
TH
and R
DS
Variation with Temperature
2.0
R
DS(ON)
@ 4.5V, 120mA
1.6
125°C
25°C
1.2
1.2
1.0
0.8
0.8
0.6
0.4
V
DS
= 25V
0.2
0.6
0
0
2
4
6
8
10
-50
0
V
GS(th)
@ 1mA
0.4
0
50
100
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
T
j
(
°
C)
Gate Drive Dynamic Characteristics
8
75
C (picofarads)
V
GS
(volts)
f = 1MHz
50
6
4
C
ISS
25
V
DS
= 10V
100pF
V
DS
= 40V
2
C
RSS
0
0
10
20
C
OSS
0
30
40
0
32 pF
0.2
0.4
0.6
0.8
1.0
V
DS
(volts)
Q
G
(nanocoulombs)
08/30/99
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
T
A
= -55°C
I
D
(amperes)
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
