Freescale Semiconductor
Technical Data
Document Number: MRF8S9260H
Rev. 1, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ
= 1700 mA, P
out
= 75 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
18.8
18.7
18.6
D
(%)
36.0
37.0
38.5
Output PAR
(dB)
6.3
6.2
5.9
ACPR
(dBc)
--39.5
--38.6
--37.1
MRF8S9260HR3
MRF8S9260HSR3
920-
-960 MHz, 75 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
Typical P
out
@ 1 dB Compression Point
≃
260 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2,3)
CW Operation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
CASE 465B-
-04
NI-
-880
MRF8S9260HR3
CASE 465C-
-03
NI-
-880S
MRF8S9260HSR3
Value
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
280
1.5
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 75 W CW, 28 Vdc, I
DQ
= 1800 mA
Case Temperature 80C, 265 W CW, 28 Vdc, I
DQ
= 1100 mA
Symbol
R
JC
Value
(3,4)
0.37
0.31
Unit
C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2009, 2012. All rights reserved.
MRF8S9260HR3 MRF8S9260HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C
A
IV
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1700 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 4.4 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.4
0.1
2.3
3.1
0.2
3
3.9
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1700 mA, P
out
= 75 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
D
PAR
ACPR
IRL
17.5
36.0
5.5
—
—
18.6
38.5
5.9
--37.1
--14
20.0
—
—
--35.0
--9
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1700 mA, P
out
= 75 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
5
MHz Offset.
Frequency
920 MHz
940 MHz
960 MHz
1. Part internally matched both on input and output.
G
ps
(dB)
18.8
18.7
18.6
D
(%)
36.0
37.0
38.5
Output PAR
(dB)
6.3
6.2
5.9
ACPR
(dB)
--39.5
--38.6
--37.1
IRL
(dB)
--16
--18
--14
(continued)
MRF8S9260HR3 MRF8S9260HSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 130 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 75 W Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
(1)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
260
10
Max
—
—
Unit
W
MHz
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1700 mA, 920--960 MHz Bandwidth
VBW
res
G
F
G
P1dB
—
—
—
—
50
0.2
0.024
0.0075
—
—
—
—
MHz
dB
dB/C
dB/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S9260HR3 MRF8S9260HSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C21
R2
C7
C6
C8
C9
C19 C20
C10
C5 R1
CUT OUT AREA
C1 C2
C3
C4
C18
C11
C17
C16*
C12 C13
C14
C15
MRF8S9260H
Rev. 1
*C16 is mounted vertically.
Figure 1. MRF8S9260HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S9260HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C6, C9, C12, C16
C2
C3
C4, C5
C7
C8, C13, C14, C19, C20
C10, C11
C15, C21
C17
C18
R1
R2
PCB
Description
36 pF Chip Capacitors
0.4 pF Chip Capacitor
4.7 pF Chip Capacitor
8.2 pF Chip Capacitors
4.7
F,
50 V Chip Capacitor
10
F,
50 V Chip Capacitors
5.6 pF Chip Capacitors
470
F,
63 V Electrolytic Capacitors
4.3 pF Chip Capacitor
0.8 pF Chip Capacitor
10
,
1/4 W Chip Resistor
0
,
3.5 A Chip Resistor
0.030,
r
= 3.5
Part Number
ATC100B360JT500XT
ATC100B0R4BT500XT
ATC100B4R7BT500XT
ATC100B8R2BT500XT
C4532X5R1H475MT
C5750X5R1H106MT
ATC100B5R6BT500XT
477KXM063M
ATC100B4R3BT500XT
ATC100B0R8BT500XT
CRCW120610R0JKEA
CRCW12060000Z0EA
RF--35
Manufacturer
ATC
ATC
ATC
ATC
TDK
TDK
ATC
Illinois Capacitor
ATC
ATC
Vishay
Vishay
Taconic
MRF8S9260HR3 MRF8S9260HSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 75 W (Avg.)
I
DQ
= 1700 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
G
ps
ACPR
D
, DRAIN
EFFICIENCY (%)
21
20.5
20
G
ps
, POWER GAIN (dB)
19.5
19
18.5
18
17.5
17
16.5
16
900
910
920
930
940
950
960
970
980
f, FREQUENCY (MHz)
IRL
PARC
D
42
40
38
36
34
--33
ACPR (dBc)
--35
--37
--39
--41
--43
--9
--11
--13
--15
--17
--19
IRL, INPUT RETURN LOSS (dB)
0
--0.5
--1
--1.5
--2
--2.5
PARC (dB)
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 75 Watts Avg.
--10
--20
--30
--40
--50
--60
V
DD
= 28 Vdc, P
out
= 250 W (PEP), I
DQ
= 1700 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
IM3--U
IM3--L
IM5--L
IM7--U
IM7--L
1
10
TWO--TONE SPACING (MHz)
100
IM5--U
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
21
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20
G
ps
, POWER GAIN (dB)
19
18
17
16
15
1
0
--1 dB = 64 W
--1
--2
--3
--4
--5
--2 dB = 88 W
PARC
V
DD
= 28 Vdc, I
DQ
= 1700 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
35
60
85
110
135
D
ACPR
G
ps
--3 dB = 122 W
60
50
40
30
20
10
--20
--25
--30
--35
--40
--45
--50
ACPR (dBc)
0
160
P
out
, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S9260HR3 MRF8S9260HSR3
RF Device Data
Freescale Semiconductor, Inc.
5
D
DRAIN EFFICIENCY (%)
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