Freescale Semiconductor
Technical Data
Document Number: MMG3013NT1
Rev. 7, 2/2012
Broadband High Linearity Amplifier
MMG3013NT1
The MMG3013NT1 is a general purpose amplifier that is internally input
matched and internally output matched. It is designed for a broad range of
Class A, small--signal, high linearity, general purpose applications. It is
suitable for applications with frequencies from 0 to 6000 MHz such as
cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general
small--signal RF.
Features
•
Frequency: 0--6000 MHz
•
P1dB: 20.5 dBm @ 900 MHz
•
Small--Signal Gain: 20 dB @ 900 MHz
•
Third Order Output Intercept Point: 36 dBm @ 900 MHz
•
Single 5 Volt Supply
•
Internally Matched to 50 Ohms
•
Cost--effective SOT--89 Surface Mount Package
•
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
0-
-6000 MHz, 20 dB
20.5 dBm
InGaP HBT
12
3
CASE 1514-
-02, STYLE 1
SOT-
-89
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Symbol
G
p
IRL
ORL
P1dB
OIP3
900
MHz
20
--17
--11
20.5
36
2140
MHz
17
--19
--9
20.5
34
3500
MHz
14.5
--15
--12
19
32
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
(2)
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
7
300
12
--65 to +150
150
Unit
V
mA
dBm
°C
°C
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. V
CC
= 5 Vdc, T
A
= 25°C, 50 ohm system.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 89°C, 5 Vdc, 90 mA, no RF applied
Symbol
R
θJC
Value
(3)
42
Unit
°C/W
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2005--2008, 2012. All rights reserved.
MMG3013NT1
1
RF Device Data
Freescale Semiconductor, Inc.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
LIFETIME BUY
Table 4. Electrical Characteristics
(V
CC
= 5 Vdc, 900 MHz, T
A
= 25°C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
Supply Current
(1)
Supply Voltage
(1)
900 MHz
2140 MHz
Symbol
G
p
IRL
ORL
P1dB
OIP3
NF
I
CC
V
CC
Min
19.3
16
—
—
—
—
—
80
—
Typ
20
17
--17
--11
20.5
36
4
90
5
Max
—
—
—
—
—
—
—
110
—
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3013NT1
2
RF Device Data
Freescale Semiconductor, Inc.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
LIFETIME BUY
Table 5. Functional Pin Description
1
2
3
RF
in
Ground
RF
out
/DC Supply
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD 22--A114)
Class
1A
A
IV
LIFETIME BUY
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
1
Package Peak Temperature
260
Unit
°C
Per JESD 22--A113, IPC/JEDEC J--STD--020
MMG3013NT1
RF Device Data
Freescale Semiconductor, Inc.
3
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Pin
Number
Pin Function
2
50 OHM TYPICAL CHARACTERISTICS
25
G
p
, SMALL--SIGNAL GAIN (dB)
T
C
= 85°C
20
--40°C
25°C
S11, S22 (dB)
0
S22
--10
--20
S11
15
--30
V
CC
= 5 Vdc
0
1
2
f, FREQUENCY (GHz)
3
4
V
CC
= 5 Vdc
--40
0
1
2
f, FREQUENCY (GHz)
3
4
10
LIFETIME BUY
Figure 2. Small-
-Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
23
P1dB, 1 dB COMPRESSION POINT (dBm)
21
19
17
15
13
11
9
10
12
14
16
P
out
, OUTPUT POWER (dBm)
V
CC
= 5 Vdc
18
20
2600 MHz
3500 MHz
900 MHz
1960 MHz
2140 MHz
23
22
21
20
19
18
17
16
0.5
1
1.5
2
2.5
f, FREQUENCY (GHz)
V
CC
= 5 Vdc
3
3.5
Figure 4. Small-
-Signal Gain versus Output
Power
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
180
160
39
36
33
30
27
24
0
Figure 5. P1dB versus Frequency
140
120
100
80
60
40
20
0
4
4.2
4.4
4.6
4.8
5
5.2
5.4
V
CC
, COLLECTOR VOLTAGE (V)
V
CC
= 5 Vdc
100 kHz Tone Spacing
1
2
f, FREQUENCY (GHz)
3
4
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3013NT1
4
RF Device Data
Freescale Semiconductor, Inc.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
I
CC
, COLLECTOR CURRENT (mA)
G
p
, SMALL--SIGNAL GAIN (dB)
50 OHM TYPICAL CHARACTERISTICS
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
39
36
33
30
27
24
4.9
4.95
5
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
38
37
36
35
34
33
32
31
--40
V
CC
= 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
--20
0
20
40
60
80
100
f = 900 MHz
1 MHz Tone Spacing
5.05
5.1
LIFETIME BUY
V
CC
, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
10
5
Figure 9. Third Order Output Intercept Point
versus Case Temperature
--30
--40
--50
--60
--70
--80
5
8
11
14
17
20
P
out
, OUTPUT POWER (dBm)
V
CC
= 5 Vdc
f = 900 MHz
100 kHz Tone Spacing
MTTF (YEARS)
10
4
10
3
120
125
130
135
140
145
150
T
J
, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with V
CC
= 5 Vdc, I
CC
= 90 mA
Figure 10. Third Order Intermodulation Distortion
versus Output Power
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
--20
--30
--40
--50
--60
--70
6
8
10
12
14
16
18
P
out
, OUTPUT POWER (dBm)
8
NF, NOISE FIGURE (dB)
6
V
CC
= 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
4
2
V
CC
= 5 Vdc
0
0
1
2
f, FREQUENCY (GHz)
3
4
Figure 12. Noise Figure versus Frequency
Figure 13. Single-
-Carrier W-
-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3013NT1
RF Device Data
Freescale Semiconductor, Inc.
5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
嵌入式系统
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