SEMICONDUCTOR
N-40EPU06 Series
FRED
Ultrafast Soft Recovery Diode, 40 A
RoHS
RoHS
N
ell
High Power Products
FEATURES
Ultrafast recovery
175
°C
operating junction temperature
Designed and qualified for industrial level
N-40EPU06
N-40APU06
-
BENEFITS
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
Cathode
to base
2
Cathode
to base
2
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
1
Cathode
3
Anode
1
Anode
3
Anode
TO-247AC modified
TO-247AB
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
40
ns
40
A
600
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Operating junction and storage temperatures
SYMBOL
V
R
l
F(AV)
l
FSM
T
j
, T
Stg
T
C
= 116
°C
T
C
= 25
°C
TEST CONDITIONS
VALUES
600
40
360
- 55
to
175
°C
UNITS
V
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T
J
= 25
ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
Forward voltage
V
BR,
V
r
V
F
l
R
= 100µA
l
F
= 40A
l
F
= 80A
l
F
= 40A, T
J
= 150°C
600
-
-
-
-
-
-
1.50
1.8
1.20
-
-
36
-
1.70
-
-
25
500
-
pF
µA
V
Reverse leakage current
Junction capacitance
l
R
C
T
V
R
= V
R
rated
T
J
= 150°C, V
R
= V
R
rated
V
R
= 200V
-
Page 1 of 6
SEMICONDUCTOR
N-40EPU06 Series
RoHS
RoHS
N
ell
High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
(T
J
= 25
ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
I
F
= 0.5A, I
R
= 1A, I
RR
=0.25A (RG#1 CKT)
Reverse recovery time
t
rr
I
F
= 1A, dI
F
/dt = -100 A/µs, V
R
=30V, T
J
=25°C
T
J
= 25°C
T
J
= 125°C
Peak recovery current
l
RRM
Q
rr
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 40
A
dI
F
/dt = -200
A/µs
V
R
= 400
V
-
-
-
-
-
-
-
-
36
22
25
160
3
6
35
480
45
-
-
-
-
-
-
-
A
ns
Reverse recovery charge
nC
THERMAL
-
MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
R
thJC
R
thCS
Mounting surface, flat, smooth
and greased
-
-
-
-
0.6
(5)
Case style TO-247AC modified
Case style TO-247AC
-
0.3
5.5
0.2
-
40EPU06
40APU06
0.67
°C/W
-
-
-
1.2
(10)
g
oz.
N⋅ m
(lbf .
in)
Marking device
Fig.1 Forward current vs. forward voltage
Fig.2 Typical values of reverse current vs.
reverse voltage
120
1000
100
100
T j =175°
T j =150°
Forward current, I
F
Reverse current,l
R
80
10
T j =125°
T j =100°
60
T
J
=125°C
(µA)
(A)
1
0.1
40
T
J
=175°C
T j =25°
0.01
0.001
0.0001
20
0
0
0.6
0.9
1.2
1.5
T
J
=25°C
T
J
=-55°C
1.8
2.1
0
100
200
300
400
500
600
Anode-to-cathode voltage (V), V
F
Reverse voltage (V) , V
R
Page 2 of 6
SEMICONDUCTOR
N-40EPU06 Series
RoHS
RoHS
N
ell
High Power Products
Fig.3a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.70
Thermal impedance(°C/W), Z
θJC
0.60
0.50
0.40
D = 0.9
0.7
0.5
0.30
0.20
0.10
0
0.3
Note
:
P
DM
t
1
t
2
0.1
0.05
10
-5
10
-4
SINGLE PULSE
10
-3
10
-2
Duty Factor D =t 1 /t 2
Peak T
J
= P
DM
xZ
θ
JC
+T
C
10
-1
1.0
Rectangular pulse duration (seconds)
Fig.3b transient thermal impedance model
RC MODEL
Junction
temp (°C)
0.289
Power
(watts)
0.381
Case temperature (°C)
0.120
0.00448
Fig.4 Junction capacitance vs. reverse voltage
200
Fig.5 Max. allowable case temperature
Vs. average forward current
180
Allowable case temperature
(°C)
Junction capacitance, C J
180
160
140
(pF)
120
100
80
60
40
20
0
1
10
100 200
160
DC
140
120
100
See note
(1)
Square wave (D = 0.5)
Rated V
R
applied
80
0
10 20
25 30 35 40 45 50
60
reverse voltage (V), V R
Average forward current IF(AV) (A)
Page 3 of 6
SEMICONDUCTOR
N-40EPU06 Series
RoHS
RoHS
N
ell
High Power Products
Fig.6 Reverse recovery time vs. current rate of change
180
160
V
R
= 400V
T
J
= 125°C
Fig 7. Reverse recovery current vs. current rate of change
25
Reverse recovery current, l RRM
(A)
T
J
= 125°C
V
R
= 400V
Reverse recovery time, t rr
(ns)
80A
40A
80A
140
120
20A
100
80
60
40
20
0
0
200
400
600
800
1000
1200
20
15
10
20A
5
40A
0
0
200
400
600
800
1000
1200
Current rate of change(A/μs), -di F /dt
Current rate of change (A/μs), -di F /dt
Fig.8 Reverse recovery charge vs. current rate of change
1400
T
J
= 125°C
Reverse recovery charge, Q rr
(nC)
V
R
= 400V
1200
80A
1000
800
600
400
20A
200
0
0
200
400
600
800
1000
1200
40A
Current rate of change (A/μs), -di F /dt
Ordering Information Tabel
Device code
N
1
1
2
3
4
5
6
-
-
-
-
-
-
Nell
-
40
2
E
3
P
4
U
5
06
Current rating
Single Diode
(40 = 40A)
E = 2 pins
A = 3 pins
TO-247AC
(Modified)
Ultrafast Recovery
Voltage Rating
(06 = 600
V)
Page 4 of 6
SEMICONDUCTOR
N-40EPU06 Series
RoHS
RoHS
N
ell
High Power Products
Fig.9 Reverse recovery parameter test circuit
Fig.10 Reverse recovery waveform and definitions
Page 5 of 6
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