Battrax SLIC Protector
Battrax
SLIC Protector
This solid state protection device can be referenced to either a positive or negative voltage
source. The B1xx0C_ is for a -V
REF
and the B2050C_ is for a +V
REF
. Designed using an
SCR and a gate diode, the B1xx0C_
Battrax
begins to conduct at |-V
REF
| + |-1.2 V| while the
B2050C_
Battrax
begins to conduct at |+V
REF
| + |1.2 V|.
For a diagram of a
Battrax
application, see Figure 3.38.
Pin 2
(Ground)
Pin 3
(-VREF)
Gate
-Battrax
B1xx0C_
Pin 1
(Line)
Pin 3
(+VREF)
Pin 1
(Line)
+Battrax
B2050C_
Pin 2
(Ground)
Electrical Parameters
Part
Number *
B1100C_
B1160C_
B1200C_
B2050C_
V
DRM
Volts
|-V
REF
| + |-1.2 V|
|-V
REF
| + |-1.2 V|
|-V
REF
| + |-1.2 V|
|+V
REF
| + |1.2 V|
V
S
Volts
|-V
REF
| + |-10 V|
|-V
REF
| + |-10 V|
|-V
REF
| + |-10 V|
|+V
REF
| + |10 V|
V
T
Volts
4
4
4
4
I
DRM
µAmps
5
5
5
5
I
GT
mAmps
100
100
100
50
I
T
Amps
2.2
2.2
2.2
2.2
I
H
mAmps
100
160
200
50
C
O
pF
50
50
50
50
* For individual “CA” and “CC” surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
• I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
• I
PP
ratings assume V
REF
= ±48 V.
• V
DRM
is measured at I
DRM.
• V
S
is measured at 100 V/µs.
• Off-state capacitance (C
O
) is measured at 1 MHz with a 2 V bias and is a typical value. “CC” product is approximately 2x the listed
value.
• Positive Battrax information is preliminary data.
• V
REF
maximum value for the negative Battrax is -200 V.
• V
REF
maximum value for the positive Battrax is 110 V.
Surge Ratings
I
PP
2x10 µs
Amps
150
500
I
PP
8x20 µs
Amps
150
400
I
PP
10x160 µs
Amps
90
200
I
PP
10x560 µs
Amps
60
150
I
PP
10x1000 µs
Amps
50
100
I
TSM
60 Hz
Amps
20
50
di/dt
Amps/µs
500
500
Series
A
C
http://www.littelfuse.com
+1 972-580-7777
2 - 50
SIDACtor
®
© 2004 Littelfuse, Inc.
Data Book and Design Guide
Battrax SLIC Protector
Thermal Considerations
Package
Modified DO-214AA
Pin 3
(V
REF
)
Symbol
T
J
T
S
R
θJA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
-40 to +150
-65 to +150
85
Unit
°C
°C
°C/W
+I
+I
I
T
+I
I
T
I
S
I
H
I
DRM
V
T
I
DRM
V
DRM
I
H
I
GT
I
T
-I
-I
V-I Characteristics for Negative Battrax
I
GT
I
H
V
T
V
S
V
DRM
-V
-V
I
DRM
+V
+V
-V
V
T
V
DRM
V
S
+V
V
S
-I
V-I Characteristics for Positive Battrax
14
Percent of V
S
Change – %
12
8
6
4
2
0
-4
-6
-8
-40 -20 0 20 40 60 80 100 120 140 160
I
H
I
H
(T
C
= 25 ˚C)
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0
20 40 60 80 100 120 140 160
25 ˚C
25 ˚C
Ratio of
Case Temperature (T
C
) – ˚C
Junction Temperature (T
J
) – ˚C
Normalized V
S
Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
© 2004 Littelfuse, Inc.
SIDACtor
®
Data Book and Design Guide
2 - 51
http://www.littelfuse.com
+1 972-580-7777
Data Sheets
Pin 1
(Line)
Pin 2
(Ground)
FPGA/CPLD
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