AP20T03GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
50mΩ
12.5A
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP20T03GJ) is available for low-profile applications.
G D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±
20
12.5
8
40
12.5
0.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
10
110
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200107041
AP20T03GH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
Max. Units
-
-
50
80
3
-
1
25
±100
7
-
-
-
-
-
-
430
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=8A
V
GS
=4.5V, I
D
=5A
-
-
-
6
-
-
-
4
1.5
2.3
6
30
10
3
270
70
50
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=
±
20V
I
D
=10A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=10A
R
G
=3.3Ω,V
GS
=10V
R
D
=1.5Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=5A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
16
9
Max. Units
1.3
-
-
V
ns
nC
t
rr
Q
rr
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP20T03GH/J
20
18
18
T
C
=25 C
o
16
I
D
, Drain Current (A)
14
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
16
T
C
=150
o
C
14
10V
7.0V
5.0V
4.5V
12
12
10
10
8
8
6
6
4
4
V
G
=3.0V
2
0
0.0
0.5
1.0
1.5
2.0
2.5
V
G
=3.0V
2
0
0
1
1
2
2
3
3
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
75
1.8
I
D
=5A
T
C
=25 C
65
o
1.5
I
D
=8A
V
G
=10V
Normalized R
DS(ON)
1.3
R
DS(ON)
(m
Ω
)
55
1.0
45
0.8
35
3
5
7
9
11
0.5
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
10
8
2.0
6
Is (A)
T
j
=150
o
C
4
T
j
=25
o
C
V
GS(th)
(V)
1.5
1.0
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP20T03GH/J
14
f=1.0MHz
1000
I
D
= 10 A
12
V
GS
, Gate to Source Voltage (V)
10
V
DS
=15V
V
DS
=20V
V
DS
=24V
C (pF)
100
Ciss
8
6
Coss
Crss
4
2
0
10
0
3
6
9
12
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
10
100us
0.2
1
1ms
10ms
100ms
1s
DC
T
c
=25
o
C
Single Pulse
0.1
I
D
(A)
0.1
0.05
0.02
P
DM
t
0.01
0.1
T
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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