B120-B160
Schottky Barrier Rectifiers
REVERSE VOLTAGE: 20 --- 60 V
CURRENT: 1.0 A
Features
◇
Plastic package has Underwriters Laboratory
11 1
Flammability Classification 94V-0
◇
For surface mounted applications
Built-in strain relief
Metal silicon junction, majority carrier conduction
High surge capability
1.5± 0.1
DO - 214AC(SMA)
4.5± 0.1
◇
◇
◇
Low power loss,high effciency
◇
For use in low voltage high frequency inverters,free
11 1
wheeling and polarity protection applications
◇
Guardring for overvoltage protection
◇
High temperature soldering guaranteed:250
o
C/10
11 1
seconds at terminals
5.1± 0.2
2.1± 0.2
Mechanical Data
◇
Case:JEDEC DO-214AC,molded plastic over
11 11passivated
chip
◇
Polarity: Color band denotes cathode end
◇
Weight: 0.002 ounces, 0.064 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
Dev ice marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current at
x
T
L
(SEE FIG.1)
Peak forw ard surge current 8.3ms single half-
x
sine-w ave superimposed on rated load(JEDEC
x
Method)
Maximum instantaneous forw ard voltage at
x
1.0A(NOTE.1)
Maximum DC reverse current (NOTE.1)
x
@T
A
=25
o
C
at rated DC blockjing voltage
@T
A
=100 C
o
0.203MAX
1.3± 0.2
2.6± 0.15
0.2± 0.05
◇
◇
Low profile package
B120
V
RRM
V
RWS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θ
JA
R
θ
JL
20
14
20
B130
30
21
30
B140
40
28
40
1.0
30.0
B150
50
35
50
B160
60
42
60
UNITS
V
V
V
A
A
0.5
0.5
10.0
88.0
20.0
-
55
---
+125
-
55
--- +150
0.7
V
mA
Typical thermal resitance (NOTE. 2)
Storage temperature range Operating junction
x
and storage temperature range
Storage temperature range
o
C/W
o
T
j
T
STG
C
C
o
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm
2
)copper pad areas
http://www.luguang.cn
mail:lge@luguang.cn
B120-B160
Schottky Barrier Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- FORWARD DERATING CURVE
FIG.2-- PEAK FORWARD SURGE CURRENT
50
1.0
AVERAGE FORWARD
CURRENT,AMPERES
Resistive or
inductive Load
PEAK FORWARD SURGE
CURRENT,AMPERES
40
T
L
=100 C
8.3ms Single Half Sine-Wave
(JEDEC Method)
O
30
0.5
20
0
50 60
P.C.B.MOUNTED ON
0.2X0.2(5.0X5.0mm)
COPPERPAD AREAS
10
70 80
90 100 110 120 130 140 150 160 170
0
1
10
100
LEAD TEMPERATURE
℃
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD
CURRENT,AMPERES
INSTANTANEOUS REVERSE
CURRENT,MICROAMPERES
50
TJ=125 C
O
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
10
B120-B140
B150-B160
10
TJ=100 C
O
1
Puise Width=300
1%DUTY CYCLE
S
1
T
J
=125 C
0
0.1
T
J
=75 C
0
0.1
TJ=25 C
O
0.01
T
J
=25
0
C
0.01
0
B120-B140
B150-B160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
％
FIG.5--TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
400
TJ=25 C
f=1.0MHz
Vsig=50mVp-p
0
100
10
0.1
B120-B140
B150-B160
1
10
100
REVERSE VOLTAGE,VOLTS
http://www.luguang.cn
mail:lge@luguang.cn
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
