AP12L02H/J
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low Gate Charge
▼
Fast Switching
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
25V
85mΩ
12A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP12L02J) are available for low-profile applications.
GD
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=100℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
25
± 20
12
9
22
20
0.16
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
6.2
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
200110031
AP12L02H/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
25
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.024
Max. Units
-
-
85
180
3
-
1
25
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=4A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=25V, V
GS
=0V
V
DS
=20V ,V
GS
=0V
V
GS
= ± 20V
I
D
=6A
V
DS
=20V
V
GS
=5V
V
DS
=15V
I
D
=6A
R
G
=3.3Ω,V
GS
=10V
R
D
=2.5Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
-
-
5.2
-
-
-
3.5
1
2.3
4.8
15.9
10.4
2.7
105
70
30
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.2V
T
j
=25℃, I
S
=12A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
12
22
1.2
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP12L02H/J
21
T
C
=25 C
o
10V
8.0V
6.0V
18
T
C
=150
o
C
10V
8.0V
6.0V
I
D
, Drain Current (A)
14
I
D
, Drain Current (A)
12
5.0V
5.0V
6
7
V
GS
=4.5V
V
GS
=4.5V
0
0.0
1.0
2.0
3.0
4.0
0
0.0
1.0
2.0
3.0
4.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
180
2
I
D
=6A
T
C
=25
℃
I
D
=6A
V
GS
=10V
80
Normalized R
DS(ON)
2
6
10
14
130
1.4
R
DS(ON)
(m
Ω
)
0.8
30
0.2
-50
0
50
100
150
V
GS
(V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP12L02H/J
16
30
12
I
D
, Drain Current (A)
20
8
P
D
(W)
10
0
4
0
25
50
75
100
125
150
0
50
100
150
T
c
, Case Temperature ( C)
o
T
c ,
Case Temperature (
o
C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Duty Factor = 0.5
Normalized Thermal Response (R
thjc
)
100us
10
0.2
I
D
(A)
1ms
0.1
0.1
0.05
P
DM
0.02
1
10ms
100ms
1s
T
C
=25
o
C
Single Pulse
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.1
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP12L02H/J
12
f=1.0MHz
1000
I
D
=6A
V
GS
, Gate to Source Voltage (V)
9
V
DS
=12V
V
DS
=16V
V
DS
=20V
C (pF)
Ciss
100
6
Coss
3
Crss
0
0
2
4
6
8
10
1
8
15
22
29
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3
2.5
10
I
S
(A)
Tj=150
o
C
Tj=25
o
C
V
GS(th)
(V)
2
1
1.5
0.1
0
0.5
1
1.5
1
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature ( C )
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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