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FRA1606G

产品描述16 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC
产品类别半导体    分立半导体   
文件大小185KB,共2页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
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FRA1606G概述

16 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC

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FRA1601G-FRA1607G
16.0AMP. Glass Passivated Fast Recovery Rectifiers
TO-220AC
.185(4.70)
.175(4.44)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.055(1.40)
.045(1.14)
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
.113(2.87)
.103(2.62)
PIN1
.16(4.06)
.14(3.56)
2
.11(2.79)
.10(2.54)
.56(14.22)
.53(13.46)
Mechanical Data
Cases: TO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free.
Polarity: As marked
High temperature soldering guaranteed:
o
260 C /10 seconds, 0.16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 16.0A
Maximum DC Reverse Current @ T
C
=25
o
C
at Rated DC Blocking Voltage @ T
C
=125
o
C
Maximum Reverse Recovery Time ( Note 1)
Typical Junction Capacitance ( Note 3 )
Typical Thermal resistance ( Note 2 )
Symbol
FRA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
50
35
50
FRA
FRA
FRA
FRA
FRA
FRA
1601G 1602G 1603G 1604G 1605G 1606G 1607G
Units
V
V
V
A
A
V
uA
uA
nS
pF
o
C/W
o
C
100
70
100
200
140
200
400
280
400
16.0
250
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
150
250
70
2.5
-65 to +150
500
Cj
R
θJC
Operating and Storage Temperature Range
T
J
,T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink
Size 2” x 3” x 0.25” Al-Plate.
3. Measured at 1MHz and Applied Reverse Voltage of 4.0 Volts D.C.
http://www.luguang.cn
mail:lge@luguang.cn

FRA1606G相似产品对比

FRA1606G FRA1601G FRA1602G FRA1603G FRA1604G FRA1605G FRA1607G
描述 16 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC

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