BLF7G15LS-300P
Power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
300 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1476 to 1511
I
Dq
(mA)
2600
V
DS
(V)
28
P
L(AV)
(W)
85
G
p
(dB)
18
D
(%)
31
ACPR
(dBc)
32
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1450 MHz to 1550 MHz frequency range
NXP Semiconductors
BLF7G15LS-300P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Discrete pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
1
2
5
Graphic symbol
1
3
3
4
5
4
2
sym117
[1]
Connected to flange
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G15LS-300P
-
earless flanged balanced LDMOST ceramic package;
4 leads
Version
SOT539B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
per section
Conditions
Min
-
0.5
-
65
-
Max
65
+13
45
+150
200
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
T
case
= 80
C;
P
L
= 85 W;
V
DS
= 28 V; I
Dq
= 2600 mA
Typ
0.21
Unit
K/W
thermal resistance from junction to case
Symbol Parameter
BLF7G15LS-300P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
2 of 11
NXP Semiconductors
BLF7G15LS-300P
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 220 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 11.0 A
Min
65
1.5
-
34
-
-
-
Typ
-
1.9
-
39
-
16.2
Max
-
2.3
2.8
-
280
-
Unit
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.2 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.7 A
0.065 -
7. Test information
Table 7.
Functional test information
Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f
1
= 1473.5 MHz; f
2
= 1478.5 MHz; f
3
= 1508.5 MHz; f
4
= 1513.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 2600 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 85 W
P
L(AV)
= 85 W
P
L(AV)
= 85 W
P
L(AV)
= 85 W
Conditions
Min
-
17
-
28
-
Typ
85
18
7
31
32
Max
-
-
6
-
28
Unit
W
dB
dB
%
dBc
Table 8.
PAR performance
Mode of operation: 1-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f
1
= 1511 MHz; RF performance at V
DS
= 28 V; I
Dq
= 2600 mA; T
case
= 25
C;
unless otherwise specified; in a class-AB production test circuit.
Symbol
PAR
O
Parameter
output peak-to-average
ratio
Conditions
P
L(AV)
= 130 W
at 0.01 % probability on
CCDF
Min
4.4
Typ
5.0
Max
-
Unit
dB
7.1 Ruggedness in class-AB operation
The BLF7G15LS-300P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 2600 mA; P
L
= 100 W (CW); f = 1450 MHz to 1550 MHz.
BLF7G15LS-300P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
3 of 11
NXP Semiconductors
BLF7G15LS-300P
Power LDMOS transistor
7.2 Impedance information
Table 9.
Typical impedance per section (for the maximum peak power)
I
Dq
= 1300 mA; V
DS
= 28 V.
Z
S
and Z
L
defined in
Figure 1.
f
(MHz)
1410
1480
1560
Z
S
()
0.65
j2.06
0.55
j1.92
0.63
j2.14
Z
L
()
6.3
j2.1
7.2
j1.3
6.8 + j0.26
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Graphs
22
G
p
(dB)
20
G
p
18
001aam553
60
η
D
(%)
(1)
(2)
50
40
16
η
D
30
14
20
12
10
10
0
50
100
150
200
250
0
300
350
P
L
(W)
V
DS
= 28 V; I
Dq
= 2600 mA.
(1) f = 1476 MHz
(2) f = 1511 MHz
Fig 2.
One-tone CW power gain and drain efficiency as function of load power;
typical values
BLF7G15LS-300P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
4 of 11
NXP Semiconductors
BLF7G15LS-300P
Power LDMOS transistor
22
G
p
(dB)
20
(1)
(2)
001aam554
50
η
D
(%)
40
η
D
IMD
(dBc)
−10
(1)
0
001aam555
−20
18
G
p
30
−30
−40
IMD3
IMD5
16
20
IMD7
−50
14
10
−60
12
0
50
100
150
0
200
250
P
L
(W)
−70
(2)
0
50
100
150
200
250
P
L
(W)
V
DS
= 28 V; I
Dq
= 2600 mA;
tone spacing 0.1 MHz.
(1) f = 1476 MHz
(2) f = 1511 MHz
V
DS
= 28 V; I
Dq
= 2600 mA;
tone spacing 0.1 MHz.
(1) f = 1476 MHz
(2) f = 1511 MHz
Fig 3.
Two-tone CW power gain and drain efficiency
as function of average load power;
typical values
Fig 4.
Two-tone intermodulation distortion as a
function of average load power; typical values
22
G
p
(dB)
20
(1)
(2)
001aam556
50
η
D
(%)
40
0
ACPR
(dBc)
−10
001aam557
η
D
18
G
p
30
−20
(1)
(2)
16
20
−30
14
10
−40
12
0
50
100
150
0
200
250
P
L
(W)
−50
0
50
100
150
200
250
P
L
(W)
V
DS
= 28 V; I
Dq
= 2600 mA;
carrier spacing 5 MHz.
(1) f = 1476 MHz
(2) f = 1511 MHz
V
DS
= 28 V; I
Dq
= 2600 mA;
carrier spacing 5 MHz.
(1) f = 1476 MHz
(2) f = 1511 MHz
Fig 5.
2-carrier W-CDMA power gain and drain
efficiency as function of load power;
typical values
Fig 6.
2-carrier W-CDMA adjacent channel power
ratio as function of load power 5 MHz
frequency offset; typical values
BLF7G15LS-300P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
5 of 11
MEMS传感器
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