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5962D9568501VGA

产品描述OP-AMP, 10000uV OFFSET-MAX, 20MHz BAND WIDTH, MBCY8
产品类别模拟混合信号IC    放大器电路   
文件大小78KB,共7页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 选型对比 全文预览

5962D9568501VGA概述

OP-AMP, 10000uV OFFSET-MAX, 20MHz BAND WIDTH, MBCY8

5962D9568501VGA规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Renesas(瑞萨电子)
零件包装代码BCY
包装说明, CAN8,.2
针数8
Reach Compliance Codenot_compliant
ECCN代码EAR99
放大器类型OPERATIONAL AMPLIFIER
架构VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)0.7 µA
25C 时的最大偏置电流 (IIB)0.7 µA
标称共模抑制比75 dB
频率补偿YES (AVCL>=3)
最大输入失调电压10000 µV
JESD-30 代码O-MBCY-W8
JESD-609代码e0
低-失调NO
负供电电压上限-20 V
标称负供电电压 (Vsup)-15 V
功能数量1
端子数量8
最高工作温度125 °C
最低工作温度-55 °C
封装主体材料METAL
封装等效代码CAN8,.2
封装形状ROUND
封装形式CYLINDRICAL
峰值回流温度(摄氏度)NOT SPECIFIED
电源+-15 V
认证状态Not Qualified
筛选级别MIL-PRF-38535 Class V
最小摆率84 V/us
标称压摆率120 V/us
供电电压上限20 V
标称供电电压 (Vsup)15 V
表面贴装NO
技术BIPOLAR
温度等级MILITARY
端子面层Tin/Lead (Sn/Pb)
端子形式WIRE
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
总剂量10k Rad(Si) V
标称均一增益带宽10000 kHz
最小电压增益6500

文档预览

下载PDF文档
HS-2520RH
Data Sheet
August 1999
File Number
3599.2
Radiation Hardened Uncompensated,
High Slew Rate Operational Amplifier
The HS-2520RH is a radiation hardened monolithic
operational amplifier which delivers an unsurpassed
combination of specifications for slew rate, bandwidth and
settling time. This dielectrically isolated amplifier is designed
for closed loop gains of 3 or greater without external
compensation. In addition, this high performance component
also provides low offset current and high input impedance.
The 100V/µs (Min) slew rate and fast settling time of this
amplifier makes it an ideal component for pulse amplification
and data acquisition designs. To insure compliance with slew
rate and transient response specifications, all devices are
100% tested for AC performance characteristics over full
temperature. This device is a valuable component for RF
and video circuitry requiring wideband operation. For
accurate signal conditioning designs, the HS-2520RH
superior dynamic specifications are complemented by 25nA
(Max) offset current and offset voltage trim capability.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95685. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Features
• Electrically Screened to SMD # 5962-95685
• QML Qualified per MIL-PRF-38535 Requirements
• High Slew Rate. . . . . . . . . . . .100V/µs Min, 120V/µs (Typ)
• Wide Power Bandwidth . . . . . . . . . . . . . . . . 1.5MHz (Min)
• Wide Gain Bandwidth . . . . . . . 10MHz Min, 20MHz (Typ)
• High Input Impedance . . . . . . . . 50MΩ Min, 100MΩ (Typ)
• Low Offset Current . . . . . . . . . . . . . 25nA Min, 10nA (Typ)
• Fast Settling (0.1% of 10V Step) . . . . . . . . . . 200ns (Typ)
• Low Quiescent Supply Current. . . . . . . . . . . . . 6mA (Max)
• Gamma Dose . . . . . . . . . . . . . . . . . . . . . . 1 x 10
4
RAD(Si)
Applications
• Data Acquisition Systems
• RF Amplifiers
• Video Amplifiers
• Signal Generators
• Pulse Amplifiers
Ordering Information
ORDERING NUMBER
HS0-2520RH-Q
5962D9568501VGA
5962D9568501VPA
5962D9568501VPC
INTERNAL
MKT. NUMBER
HS0-2520RH-Q
HS2-2520RH-Q
HS7-2520RH-Q
HS7B-2520RH-Q
TEMP. RANGE
(
o
C)
25
-55 to 125
-55 to 125
-55 to 125
Pinouts
HS7-2520RH (CERDIP) GDIP1-T8
OR
HS7B-2520RH (SBDIP) CDIP2-T8
TOP VIEW
HS2-2520RH (CAN) MACY1-X8
TOP VIEW
COMP
BAL
-IN
+IN
V-
1
2
3
4
+
8
7
6
5
COMP
V+
OUT
BAL
IN+
3
4
V-
5
BAL
BAL
1
8
7
V+
IN-
2
-
+
6
OUT
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

5962D9568501VGA相似产品对比

5962D9568501VGA 5962D9568501VPC HS2-2520RH-Q HS7B-2520RH-Q 5962D9568501VPA
描述 OP-AMP, 10000uV OFFSET-MAX, 20MHz BAND WIDTH, MBCY8 OP-AMP, 10000uV OFFSET-MAX, 10MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 OP-AMP, 10000uV OFFSET-MAX, 20MHz BAND WIDTH, MBCY8 OP-AMP, 8000uV OFFSET-MAX, 20MHz BAND WIDTH, CDIP8, SIDE BRAZED, DIP-8 OP-AMP, 8000uV OFFSET-MAX, 20MHz BAND WIDTH, CDIP8, CERDIP-8
是否Rohs认证 不符合 不符合 不符合 不符合 不符合
零件包装代码 BCY DIP BCY DIP DIP
包装说明 , CAN8,.2 DIP, DIP8,.3 , CAN8,.2 DIP, DIP8,.3 DIP, DIP8,.3
针数 8 8 8 8 8
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.7 µA 0.7 µA 0.2 µA 0.2 µA 0.2 µA
25C 时的最大偏置电流 (IIB) 0.7 µA 0.7 µA 0.2 µA 0.7 µA 0.7 µA
标称共模抑制比 75 dB 75 dB 80 dB 80 dB 80 dB
频率补偿 YES (AVCL>=3) YES (AVCL>=3) YES (AVCL>=3) YES (AVCL>=3) YES (AVCL>=3)
最大输入失调电压 10000 µV 10000 µV 8000 µV 8000 µV 8000 µV
JESD-30 代码 O-MBCY-W8 R-GDIP-T8 O-MBCY-W8 R-CDIP-T8 R-GDIP-T8
JESD-609代码 e0 e0 e0 e0 e0
低-失调 NO NO NO NO NO
负供电电压上限 -20 V -20 V -20 V -20 V -20 V
标称负供电电压 (Vsup) -15 V -15 V -15 V -15 V -15 V
功能数量 1 1 1 1 1
端子数量 8 8 8 8 8
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
封装主体材料 METAL CERAMIC, GLASS-SEALED METAL CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED
封装等效代码 CAN8,.2 DIP8,.3 CAN8,.2 DIP8,.3 DIP8,.3
封装形状 ROUND RECTANGULAR ROUND RECTANGULAR RECTANGULAR
封装形式 CYLINDRICAL IN-LINE CYLINDRICAL IN-LINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT APPLICABLE NOT SPECIFIED NOT SPECIFIED
电源 +-15 V +-15 V +-15 V +-15 V +-15 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
筛选级别 MIL-PRF-38535 Class V MIL-PRF-38535 Class V MIL-PRF-38535 Class V MIL-PRF-38535 Class V MIL-PRF-38535 Class V
最小摆率 84 V/us 84 V/us 84 V/us 84 V/us 84 V/us
标称压摆率 120 V/us 120 V/us 120 V/us 120 V/us 120 V/us
供电电压上限 20 V 20 V 20 V 20 V 20 V
标称供电电压 (Vsup) 15 V 15 V 15 V 15 V 15 V
表面贴装 NO NO NO NO NO
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 WIRE THROUGH-HOLE WIRE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM DUAL BOTTOM DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT APPLICABLE NOT SPECIFIED NOT SPECIFIED
总剂量 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V
标称均一增益带宽 10000 kHz 10000 kHz 20000 kHz 20000 kHz 20000 kHz
最小电压增益 6500 6500 6500 6500 6500
厂商名称 Renesas(瑞萨电子) - Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)
封装代码 - DIP - DIP DIP
座面最大高度 - 5.08 mm - 5.08 mm 5.08 mm
端子节距 - 2.54 mm - 2.54 mm 2.54 mm
宽度 - 7.62 mm - 7.62 mm 7.62 mm

 
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