BLF6G27L-40P;
BLF6G27LS-40P(G)
Power LDMOS transistor
Rev. 3 — 14 January 2015
Product data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
IS-95
f
(MHz)
2500 to 2700
Single carrier W-CDMA 2500 to 2700
[1]
[2]
I
Dq
(mA)
450
450
V
DS
(V)
28
28
P
L(AV)
(W)
12
20
G
p
(dB)
17.5
17.5
D
30
37
ACPR
885k
ACPR
5M
(dBc)
-
35
[2]
46
[1]
-
(%) (dBc)
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Design optimized for gull-wing and straight lead versions
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
NXP Semiconductors
BLF6G27L-40P;BLF6G27LS-40P(G)
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF6G27L-40P (SOT1121A)
BLF6G27LS-40P (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
BLF6G27LS-40PG (SOT1121E)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF6G27L-40P
BLF6G27LS-40P
BLF6G27LS-40PG
-
-
-
Version
flanged LDMOST ceramic package; 2 mounting holes; SOT1121A
4 leads
earless flanged ceramic package; 4 leads
earless flanged LDMOST ceramic package; 4 leads
SOT1121B
SOT1121E
Type number
BLF6G27L-40P_LS-40P_LS-40PG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 14 January 2015
2 of 15
NXP Semiconductors
BLF6G27L-40P;BLF6G27LS-40P(G)
Power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 40 W
Typ
0.7
Unit
K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 40 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V;
I
D
= 2000 mA
Min
65
1.4
-
5.96
-
1.8
0.14
Typ
-
1.8
-
7.2
-
2.9
0.36
Max
-
2.4
1.4
-
150
-
-
Unit
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 0.4 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 1400 mA
BLF6G27L-40P_LS-40P_LS-40PG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 14 January 2015
3 of 15
NXP Semiconductors
BLF6G27L-40P;BLF6G27LS-40P(G)
Power LDMOS transistor
7. Test information
Table 7.
Functional test information
Test signal: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels
(Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288
MHz; f
1
= 2500 MHz; f
2
= 2700 MHz; RF performance at V
DS
= 28 V; I
Dq
= 450 mA; T
case
= 25
C; 2
sections combined unless otherwise specified; in a class-AB production test circuit.
Symbol
G
p
RL
in
D
ACPR
885k
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Conditions
P
L(AV)
= 12 W
P
L(AV)
= 12 W
P
L(AV)
= 12 W
P
L(AV)
= 12 W
Min Typ Max Unit
15.5 17.5 -
-
26
-
10
-
30
-
46 41
dB
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF6G27L-40P, BLF6G27LS-40P and BLF6G27LS-40PG are capable of
withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
DS
= 28 V; I
Dq
= 450 mA; P
L
= 40 W (CW); f = 2500 MHz.
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
V
DS
= 28 V; I
Dq
= 450 mA.
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 450 mA.
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
Fig 1.
Single carrier IS-95 power gain as a function of
output power; typical values
Fig 2.
Single carrier IS-95 drain efficiency as a
function of output power; typical values
BLF6G27L-40P_LS-40P_LS-40PG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 14 January 2015
4 of 15
NXP Semiconductors
BLF6G27L-40P;BLF6G27LS-40P(G)
Power LDMOS transistor
V
DS
= 28 V; I
Dq
= 450 mA.
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 450 mA.
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
Fig 3.
Single carrier IS-95 ACPR at 885 kHz as a
function of output power; typical values
Fig 4.
Single carrier IS-95 ACPR at 1980 kHz as a
function of output power; typical values
V
DS
= 28 V; I
Dq
= 450 mA.
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 450 mA.
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
Fig 5.
Single carrier IS-95 peak-to-average power
ratio as a function of output power;
typical values
Fig 6.
Single carrier IS-95 peak output power as a
function of output power; typical values
BLF6G27L-40P_LS-40P_LS-40PG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 14 January 2015
5 of 15
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
