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US1J

产品描述SIGNAL DIODE
产品类别分立半导体    高效整流二极管   
文件大小175KB,共2页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
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US1J概述

SIGNAL DIODE

信号二极管

US1J规格参数

参数名称属性值
封装类型
Case Style
SMA
Maximum average forward rectified curre1
Maximum recurrent peak reverse voltage600
Peak forward surge curre30
Maximum instantaneous forward voltage1.7
Maximum reverse curre5.0
TRR(nS)75
classDiodes

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US1A-US1M
1.0AMP. Surface Mount High Efficient Rectifiers
SMA/DO-214AC
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Ultrafast recovery time for high efficiency
Low forward voltage, low power loss
High temperature soldering guaranteed:
260
o
C/10 seconds on terminals
Plastic material used carries Underwriters
Laboratory Classification 94V0
Mechanical Data
Cases: Molded plastic
Polarity: Indicated by cathode band
Weight: 0.064 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@ T
L
=110
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current
@ T
A
=25
o
C at Rated DC Blocking Voltage
@ T
A
=125
o
C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Symbol
US1A US1B
V
RRM
50
100
V
RMS
35
70
V
DC
50
100
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
US1D US1G US1J US1K US1M
Units
V
V
V
A
A
200
140
200
400
280
400
1.0
30
600
420
600
800 1000
560 700
800 1000
1.0
5.0
150
50
15
1.7
V
uA
uA
nS
pF
o
75
10
75
R
θJA
27
R
θJL
Operating Temperature Range
T
J
-55 to +150
Storage Temperature Range
T
STG
-55 to + 150
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area.
C/W
o
o
C
C
http://www.luguang.cn
mail:lge@luguang.cn

US1J相似产品对比

US1J US1A US1B US1K
描述 SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE

 
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