BLF6G15LS-250PBRN
Power LDMOS transistor
Rev. 2 — 18 July 2012
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1476 to 1511
V
DS
(V)
28
P
L(AV)
(W)
60
G
p
(dB)
18.5
D
(%)
34.0
ACPR
(dBc)
30
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz, a
supply voltage of 28 V and an I
Dq
of 1410 mA:
Average output power = 60 W
Power gain = 18.5 dB
Efficiency = 34.0 %
ACPR =
30
dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Integrated current sense
1.3 Applications
RF power amplifiers for GSM, GSM EDGE, CDMA and W-CDMA and multi carrier
applications in the 1450 MHz to 1550 MHz frequency range
NXP Semiconductors
BLF6G15LS-250PBRN
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6, 7
8, 9
[1]
Pinning
Description
drain1
drain2
gate1
gate2
source
sense drain
sense gate
2
sym127
Simplified outline
6
1
2
7
5
Graphic symbol
1
6, 7
3
8
[1]
8, 9
5
3
4
9
4
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF6G15LS-250PBRN -
Version
earless flanged LDMOST ceramic package; 8 leads SOT1110B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
T
case
[1]
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
case temperature
Conditions
Min
-
0.5
-
65
-
[1]
Max
65
+11
64
+150
200
150
Unit
V
V
A
C
C
C
-
Continuous use at maximum temperature will affect MTTF.
5. Recommended operating conditions
Table 5.
Symbol
T
case
Operating conditions
Parameter
case temperature
Conditions
Min
40
Max
+125
Unit
C
BLF6G15LS-250PBRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 18 July 2012
2 of 12
NXP Semiconductors
BLF6G15LS-250PBRN
Power LDMOS transistor
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
T
case
= 80
C;
P
L
= 60 W (CW)
Typ
Unit
0.29 K/W
R
th(j-case)
thermal resistance from junction to case
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C per section; unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
Dq
gate-source threshold voltage
quiescent drain current
Conditions
V
GS
= 0 V; I
D
= 1.8 mA
V
DS
= 10 V; I
D
= 180 mA
sense transistor:
I
DS
= 20.1 mA;
V
DS
= 12 V
main transistor:
V
DS
= 28 V
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
-
-
2.8
-
280
A
A
nA
S
25.3 29
-
8.1
-
Min
65
1.4
Typ
75
1.8
Max Unit
-
2.4
V
V
1.31 1.41 1.51 A
12.3 -
0.03 0.1
0.16
8. Application information
Table 8.
RF performance
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF;
3GPP test model 1; 64 DPCH; f
1
= 1473.4 MHz; f
2
= 1478.4 MHz; f
3
= 1508.4 MHz;
f
4
= 1513.4 MHz; RF performance at V
DS
= 28 V; I
Dq
= 1410 mA; T
case
= 25
C; unless otherwise
specified in a class-AB production test circuit.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 60 W
P
L(AV)
= 60 W
P
L(AV)
= 60 W
P
L(AV)
= 60 W
Conditions
Min
-
16.5
-
31
-
Typ
60
18.5
11
34
30
Max
-
-
7
-
27
Unit
W
dB
dB
%
dBc
BLF6G15LS-250PBRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 18 July 2012
3 of 12
NXP Semiconductors
BLF6G15LS-250PBRN
Power LDMOS transistor
Table 9.
PAR performance
Mode of operation; 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF;
3GPP test model 1; 64 DPCH; f
1
= 1510.9 MHz; RF performance at V
DS
= 28 V; I
Dq
= 1410 mA;
T
case
= 25
C; unless otherwise specified in a class-AB production test circuit.
Symbol Parameter
PAR
O
output peak-to-average
ratio
Conditions
P
L(AV)
= 120 W at 0.01 %
probability on CCDF
Min
3.4
Typ
4.2
Max
-
Unit
dB
8.1 Ruggedness in class-AB operation
The BLF6G15LS-250PBRN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1410 mA; P
L
= 200 W; f = 1475 MHz.
8.2 Impedance information
Table 10. Typical impedance per section
I
Dq
= 950 mA; main transistor V
DS
= 28 V
f
(MHz)
1480
1510
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
1.1
j2.8
1.3
j2.8
Z
L[1]
()
2.3
j3.2
2.1
j2.8
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLF6G15LS-250PBRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 18 July 2012
4 of 12
NXP Semiconductors
BLF6G15LS-250PBRN
Power LDMOS transistor
8.3 Graphs
8.3.1 CW
21
G
p
(dB)
20
(2)
014aab101
60
η
D
(%)
50
η
D
(3)
(1)
19
G
p
(1)
(2)
40
18
(3)
30
17
20
16
0
50
100
150
10
200
250
P
L
(W)
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
Fig 2.
Power gain and drain efficiency as function of output power; typical values
BLF6G15LS-250PBRN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 18 July 2012
5 of 12
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
