BLF6G15L-500H;
BLF6G15LS-500H
Power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for transmitter applications and industrial
applications. The transistor is optimized for digital applications and can deliver 65 W
average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for
digital transmitter applications.
Table 1.
Test information
RF performance at V
DS
= 50 V; I
Dq
= 1.3 A.
Mode of operation
2-tone, class-AB
DVB-T (8k OFDM)
[1]
[2]
f
(MHz)
1452 to 1492
1452 to 1492
P
L(AV)
(W)
250
65
G
p
(dB)
15
16
D
(%)
34
19
IMD3
(dBc)
24
-
IMD
shldr
(dBc)
-
32
[1]
PAR
(dB)
-
9
[2]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Digital transmitter applications DVB at 1.5 GHz
Industrial applications at 1.5 GHz
NXP Semiconductors
BLF6G15L-500H; BLF6G15LS-500H
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF6G15L-500H (SOT539A)
1
2
5
3
3
4
4
5
1
2
sym117
BLF6G15LS-500H (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G15L-500H
BLF6G15LS-500H
-
-
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic
package; 4 leads
Version
SOT539A
SOT539B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
100
+13
45
+150
200
Unit
V
V
A
C
C
BLF6G15L-500H_6G15LS-500H
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
2 of 13
NXP Semiconductors
BLF6G15L-500H; BLF6G15LS-500H
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
Typ
0.18
Unit
K/W
R
th(j-case)
thermal resistance from junction to case T
case
= 85
C;
P
L
= 65 W
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 270 mA
Min
100
1.4
-
38
-
1.33
-
Typ
-
1.8
-
42
-
2.3
100
Max Unit
-
2.4
2.8
-
280
-
193
V
V
A
A
nA
S
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.7 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.5 A
Table 7.
RF characteristics
RF characteristics in NXP class-AB production circuit, in frequency range 1452 MHz to 1492 MHz;
T
case
= 25
C.
Symbol
V
DS
I
Dq
P
L(AV)
G
p
D
IMD
shldr
PAR
[1]
[2]
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
Conditions
Min
-
-
-
14.5
16
[1]
[2]
Typ
50
1.3
65
16
19
32
9
Max
-
-
-
-
-
30
-
Unit
V
A
W
dB
%
dBc
dB
DVB-T (8k OFDM), class-AB
-
8.5
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
6.1 Ruggedness in class-AB operation
The BLF6G15L-500H and BLF6G15LS-500H are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 50 V; I
Dq
= 1.3 A at rated power.
BLF6G15L-500H_6G15LS-500H
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
3 of 13
NXP Semiconductors
BLF6G15L-500H; BLF6G15LS-500H
Power LDMOS transistor
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
MHz
1452
1472
1492
Z
S
1.226
j2.663
1.375
j2.757
1.15
j2.735
Z
L
2.137
j2.750
1.869
j2.378
1.817
j2.684
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.2 Graphs
7.2.1 2-Tone
001aao061
001aao062
18
G
p
(dB)
16
40
η
D
(%)
30
18
G
p
(dB)
16
IMD3
0
IMD3
(dBc)
-12
η
D
14
G
p
20
14
G
p
-24
12
10
12
-36
10
0
100
200
0
300
400
P
L(AV)
(W)
10
0
100
200
-48
300
400
P
L(AV)
(W)
V
DS
= 50 V; I
Dq
= 1.3 A; f = 1490 MHz.
V
DS
= 50 V; I
Dq
= 1.3 A; f = 1490 MHz.
Fig 2.
2-Tone power gain and drain efficiency as
function of average load power; typical values
Fig 3.
2-Tone power gain and third order
intermodulation distortion as function of
average load power; typical values
BLF6G15L-500H_6G15LS-500H
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
4 of 13
NXP Semiconductors
BLF6G15L-500H; BLF6G15LS-500H
Power LDMOS transistor
7.2.2 DVB-T
001aao063
001aao064
17
G
p
(dB)
16
-5
IMD
shldr
(dBc)
12
PAR
(dB)
8
PAR
η
D
40
η
D
(%)
30
IMD
shldr
-15
15
G
p
-25
20
4
14
-35
10
13
0
100
200
-45
300
400
P
L(AV)
(W)
0
0
100
200
0
300
400
P
L(AV)
(W)
V
DS
= 50 V; I
Dq
= 1.3 A; f = 1490 MHz.
V
DS
= 50 V; I
Dq
= 1.3 A; f = 1490 MHz.
Fig 4.
DVB-T power gain and intermodulation
distortion shoulder as function of average load
power; typical values
10
001aao065
Fig 5.
DVB-T peak-to-average ratio and drain
efficiency as function of average load power;
typical values
20
001aao066
25
η
D
(%)
23
-10
IMD
shldr
(dBc)
PAR
(dB)
9
PAR
G
p
(dB)
15
G
p
-20
8
21
-30
7
η
D
19
10
IMD
shldr
-40
6
17
5
1400
1450
1500
f (MHz)
15
1550
5
1400
1450
1500
f (MHz)
-50
1550
V
DS
= 50 V; I
Dq
= 1.3 A; P
L(AV)
= 65 W.
V
DS
= 50 V; I
Dq
= 1.3 A; P
L(AV)
= 65 W.
Fig 6.
DVB-T peak-to-average ratio and drain
efficiency as function of frequency; typical
values
Fig 7.
DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
BLF6G15L-500H_6G15LS-500H
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 12 July 2013
5 of 13
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