BLF6G13L-250P;
BLF6G13LS-250P
Power LDMOS transistor
Rev. 3 — 14 October 2011
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; I
Dq
= 100 mA; in a class-AB production test circuit.
Mode of operation
CW
f
(GHz)
1.3
V
DS
(V)
50
P
L(1dB)
(W)
250
G
p
(dB)
17
D
(%)
56
1.2 Features and benefits
Typical CW performance at a frequency of 1.3 GHz, a supply voltage of 50 V, an I
Dq
of
100 mA:
Output power = 250 W
Power gain = 17 dB
Efficiency = 56 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
NXP Semiconductors
BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF6G13L-250P (SOT1121A)
1
2
1
3
5
3
4
2
sym117
5
4
BLF6G13LS-250P (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
1
5
3
5
4
3
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G13L-250P
BLF6G13LS-250P
-
-
Description
flanged LDMOST ceramic package; 2 mounting
holes; 4 leads
earless flanged LDMOST ceramic package; 4 leads
Version
SOT1121A
SOT1121B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
100
+13
42
+150
200
Unit
V
V
A
C
C
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
2 of 14
NXP Semiconductors
BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
Conditions
Typ
0.26
Unit
K/W
thermal resistance from junction to case T
case
= 85
C;
P
L
= 250 W
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 235 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 120 mA
Min
100
1.4
-
-
-
-
-
Typ
-
1.8
-
21
-
1
200
Max Unit
-
2.4
1.4
-
240
-
-
V
V
A
A
nA
S
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 1.4 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 4.75 A
Table 7.
RF characteristics
Mode of operation: CW; f = 1.3 GHz; RF performance at V
DS
= 50 V; I
Dq
= 100 mA; T
case
= 25
C;
unless otherwise specified, in a class-AB production test circuit.
Symbol
P
L
V
DS
G
p
RL
in
D
Parameter
output power
drain-source voltage
power gain
input return loss
drain efficiency
P
L
= 250 W
P
L
= 250 W
P
L
= 250 W
P
L
= 250 W
Conditions
Min Typ Max Unit
250
-
15
-
52
-
-
17
30
56
-
50
-
20
-
W
V
dB
dB
%
6.1 Ruggedness in class-AB operation
The BLF6G13L-250P and BLF6G13LS-250P are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
DS
= 50 V; I
Dq
= 100 mA; P
L
= 250 W; f = 1.3 GHz.
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
3 of 14
NXP Semiconductors
BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
7. Application information
7.1 CW
19
G
p
(dB)
16
η
D
G
p
001aan868
60
η
D
(%)
45
13
30
10
0
50
100
150
200
250
15
300
350
P
L
(W)
V
DS
= 50 V; I
Dq
= 100 mA.
Fig 1.
Power gain and drain efficiency as function of load power; typical values
7.2 2-Carrier CW
19
G
p
G
p
(dB)
16
η
D
(%)
45
001aan869
60
η
D
13
30
10
0
100
200
P
L
(W)
15
300
V
DS
= 50 V; I
Dq
= 100 mA; carrier spacing = 100 kHz.
Fig 2.
Power gain and drain efficiency as function of load power; typical values
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
4 of 14
NXP Semiconductors
BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
21
G
p
(dB)
18
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
001aan870
-10
IMD3
(dBc)
-20
001aan871
-30
-40
15
-50
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
12
0
50
100
150
200
250
P
L
(W)
-60
0
50
100
150
200
250
P
L
(W)
V
DS
= 50 V; f = 1300 MHz; carrier spacing = 100 kHz.
(1) I
Dq
= 100 mA
(2) I
Dq
= 300 mA
(3) I
Dq
= 500 mA
(4) I
Dq
= 700 mA
(5) I
Dq
= 900 mA
(6) I
Dq
= 1100 mA
(7) I
Dq
= 1300 mA
(8) I
Dq
= 1500 mA
V
DS
= 50 V; f = 1300 MHz; carrier spacing = 100 kHz.
(1) I
Dq
= 100 mA
(2) I
Dq
= 300 mA
(3) I
Dq
= 500 mA
(4) I
Dq
= 700 mA
(5) I
Dq
= 900 mA
(6) I
Dq
= 1100 mA
(7) I
Dq
= 1300 mA
(8) I
Dq
= 1500 mA
Fig 3.
Power gain as a function of load power;
typical values
Fig 4.
Third order intermodulation distortion as a
function of load power; typical values
7.3 Impedance information
Table 8.
Typical impedance
Typical values valid per section unless otherwise specified.
f
MHz
1200
1300
1400
Z
S
3.03
j8.15
4.06
j9.52
7.00
j9.61
Z
L
optimized for G
p
2.03
j0.25
1.67
j0.92
1.50
j1.48
Z
L
optimized for
D
1.46
j0.47
1.19
j0.95
1.22
j1.49
drain 1
gate 1
Z
S
gate 2
drain 2
001aak544
Z
L
Fig 5.
Definition of transistor impedance
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
5 of 14
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