CY62177DV30 MoBL
®
32-Mbit (2 M × 16) Static RAM
Features
■
■
■
Very high speed: 55 ns
Wide voltage range: 2.20 V–3.60 V
Ultra-low active power
❐
Typical active current: 2 mA at f = 1 MHz
❐
Typical active current: 15 mA at f = f
max
Ultra low standby power
Easy memory expansion with CE
1
, CE
2
and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed/power
Packages offered in a 48-ball fine ball grid array (FBGA)
applications such as cellular telephones.The device also has an
automatic power-down feature that significantly reduces power
consumption. The device can also be put into standby mode
when deselected (CE
1
HIGH or CE
2
LOW or both BHE and BLE
are HIGH). The input/output pins (I/O
0
through I/O
15
) are placed
in a high-impedance state when: deselected (CE
1
HIGH or CE
2
LOW), outputs are disabled (OE HIGH), both Byte High Enable
and Byte Low Enable are disabled (BHE, BLE HIGH), or during
a write operation (CE
1
LOW, CE
2
HIGH and WE LOW).
Writing to the device is accomplished by taking Chip Enables
(CE
1
LOW and CE
2
HIGH) and Write Enable (WE) input LOW. If
Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is written into the location specified on the address
pins (A
0
through A
20
). If Byte High Enable (BHE) is LOW, then
data from I/O pins (I/O
8
through I/O
15
) is written into the location
specified on the address pins (A
0
through A
20
).
Reading from the device is accomplished by taking Chip Enables
(CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while
forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE)
is LOW, then data from the memory location specified by the
address pins will appear on I/O
0
to I/O
7
. If Byte High Enable
(BHE) is LOW, then data from memory will appear on I/O
8
to
I/O
15
. See the truth table for a complete description of read and
write modes.
■
■
■
■
■
Functional Description
The CY62177DV30 is a high-performance CMOS static RAM
organized as 2M words by 16 bits. This device features
advanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life (MoBL
®
) in portable
Logic Block Diagram
DATA-IN DRIVERS
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
2048K × 16
RAM Array
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
BHE
WE
OE
BLE
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
A
19
A
20
CE
2
CE
1
Power-down
Circuit
Cypress Semiconductor Corporation
Document Number : 38-05633 Rev. *G
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised July 20, 2012
CY62177DV30 MoBL
®
Contents
Pin Configuration
.............................................................. 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics Over the Operating Range ... 4
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics
(Over the Operating Range) ............................................. 5
Data Retention Waveform.................................................
6
Switching Characteristics Over the Operating Range .. 6
Switching Waveforms ...................................................... 7
Truth Table ..................................................................... 10
Ordering Information ...................................................... 10
Ordering Code Definitions ......................................... 10
Package Diagram ............................................................ 11
Reference Information ................................................... 11
Acronyms .................................................................. 11
Document Conventions ............................................. 11
Document History Page ................................................. 12
Sales, Solutions, and Legal Information ...................... 13
Worldwide Sales and Design Support ....................... 13
Products .................................................................... 13
PSoC Solutions ......................................................... 13
Document Number : 38-05633 Rev. *G
Page 2 of 13
CY62177DV30 MoBL
®
Pin Configuration
[1]
Figure 1. 48-Ball FBGATop View
1
BLE
I/O
8
I/O
9
V
SS
V
CC
I/O
14
I/O
15
A
18
2
OE
BHE
I/O
10
I/O
11
3
A
0
A
3
A
5
A
17
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
CE
2
I/O
0
I/O
2
Vcc
Vss
I/O
6
I/O
7
A
20
A
B
C
D
E
F
G
H
I/O
12
DNU
I/O
13
A
19
A
8
A
14
A
12
A
9
Product Portfolio
Power Dissipation
Product
Min
CY62177DV30LL
2.2
V
CC
Range (V)
Typ
[2]
3.0
Max
3.6
55
Speed
(ns)
Operating I
CC
(mA)
f = 1 MHz
Typ
[2]
2
Max
4
15
f = f
max
Typ
[2]
Max
30
Standby I
SB2
(A)
Typ
[2]
5
Max
50
Notes
1. DNU pins have to be left floating or tied to Vss to ensure proper application.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25 °C.
Document Number : 38-05633 Rev. *G
Page 3 of 13
CY62177DV30 MoBL
®
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ............................... –65 °C to + 150 °C
Ambient temperature with
power applied .......................................... –55 °C to + 125 °C
Supply voltage to ground potential ...... –0.3 V to V
CC
+ 0.3 V
DC voltage applied to outputs
in High Z state
[3, 4]
............................... –0.3 V to V
CC
+ 0.3 V
DC input voltage
[3, 4]
............................ –0.3 V to V
CC
+ 0.3 V
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage........................................... >2001 V
(per MIL-STD-883, method 3015)
Latch-up current..................................................... . >200 mA
Operating Range
Device
CY62177DV30LL
Range
Ambient
Temperature
V
CC
[5]
2.20 V to
3.60 V
Industrial –40 °C to +85 °C
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
Description
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
I
OH
= –0.1 mA
I
OH
= –1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
V
CC
= 2.2 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
IL
I
IX
I
OZ
I
CC
Input LOW voltage
Input leakage
current
Output leakage
current
V
CC
operating supply
current
Automatic CE
power-down
current—CMOS
inputs
Automatic CE
power-down
current—CMOS
inputs
V
CC
= 2.2 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
GND
V
I
V
CC
GND
V
O
V
CC
, output disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
–
Test Conditions
V
CC
= 2.20 V
V
CC
= 2.70 V
V
CC
= 2.20 V
V
CC
= 2.70 V
Min
2.0
2.4
–
–
1.8
2.2
–0.3
–0.3
–1
–1
Typ
[6]
–
–
–
–
–
–
–
–
–
–
15
2
5
Max
–
–
0.4
0.4
V
CC
+0.3 V
V
CC
+0.3 V
0.6
0.8
+1
+1
30
4
100
Unit
V
V
V
V
V
V
V
V
A
A
mA
mA
A
I
SB1
CE
1
V
CC
0.2
V, CE
2
< 0.2 V,
V
IN
V
CC
–0.2 V, V
IN
0.2 V)
f = f
MAX
(address and data only),
f = 0 (OE, WE, BHE and BLE), V
CC
= 3.60 V
CE
1
V
CC
0.2
V, CE
2
< 0.2 V,
V
IN
V
CC
– 0.2 V or V
IN
0.2
V,
f = 0, V
CC
= 3.60 V
I
SB2
–
5
50
A
Notes
3. V
IL(min.)
= –2.0 V for pulse durations less than 20 ns.
4. V
IH(Max)
= V
CC
+ 0.75 V for pulse durations less than 20 ns.
5. Full device AC operation requires linear V
CC
ramp from 0 to V
CC(min)
500
s.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25 °C
Document Number : 38-05633 Rev. *G
Page 4 of 13
CY62177DV30 MoBL
®
Capacitance
Parameter
[7]
C
IN
C
OUT
Description
Input capacitance
Output capacitance
Test Conditions
T
A
= 25 °C, f = 1 MHz,
V
CC
= V
CC(typ)
Max.
12
12
Unit
pF
pF
Thermal Resistance
Parameter
[7]
JA
JC
Description
Thermal resistance
(Junction to ambient)
Thermal resistance
(Junction to case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch, two-layer printed
circuit board
BGA
55
16
Unit
C/W
C/W
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
50 pF
INCLUDING
JIG AND
SCOPE
R2
V
CC
10%
GND
Rise time = 1 V/ns
ALL INPUT PULSES
90%
90%
10%
Fall time = 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
R
TH
OUTPUT
V
2.5 V (2.2 V to 2.7 V)
16667
15385
8000
1.20
3.0 V (2.7 V to 3.6 V)
1103
1554
645
1.75
Unit
V
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
Description
V
CC
for data retention
Data retention current
V
CC
= 1.5 V
CE
1
V
CC
0.2
V, CE
2
< 0.2 V,
V
IN
V
CC
– 0.2 V or V
IN
0.2 V
Conditions
Min
1.5
–
Typ
[8]
–
–
Max
–
25
Unit
V
A
t
CDR[7]
t
R[9]
Chip deselect to data
retention time
Operation recovery
time
0
55
–
–
–
–
ns
ns
Notes
7. Tested initially and after any design or process changes that may affect these parameters.
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25 °C
9. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
100
s
or stable at V
CC(min.)
100
s.
Document Number : 38-05633 Rev. *G
Page 5 of 13
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