BLC8G27LS-140AV
Power LDMOS transistor
Rev. 1 — 6 November 2014
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 2496 MHz to 2690 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a Doherty demo board.
Test signal
1-carrier W-CDMA
[1]
f
(MHz)
2496 to 2690
V
DS
(V)
28
P
L(AV)
(W)
28
G
p
(dB)
15
D
(%)
46
ACPR
(dBc)
30
[1]
Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
RF power amplifier for LTE base stations and multi carrier applications in the
2496 MHz to 2690 MHz frequency range
NXP Semiconductors
BLC8G27LS-140AV
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
[1]
Pinning
Description
drain1 (main)
drain2 (peak)
gate1 (main)
gate2 (peak)
video decoupling (main)
video decoupling (peak)
source
[1]
Simplified outline
Graphic symbol
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLC8G27LS-140AV
-
Description
air cavity plastic earless flanged package; 6 leads
Version
SOT1275-1
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction
to case
Conditions
T
case
= 80
C;
V
DS
= 28 V;
I
Dq
= 320 mA; V
GS(amp)peak
= 0.6 V
P
L
= 28 W
P
L
= 80 W
0.371 K/W
0.221 K/W
Typ
Unit
BLC8G27LS-140AV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 6 November 2014
2 of 14
NXP Semiconductors
BLC8G27LS-140AV
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
Main device
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
V
GS
= 0 V; I
D
= 0.72 mA
V
DS
= 10 V; I
D
= 72 mA
V
DS
= 28 V; I
D
= 432 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 72 mA
65
1.5
1.6
-
-
-
-
-
-
1.9
2.1
-
14
-
205
-
2.3
2.4
1.4
-
140
323
V
V
V
A
A
nA
S
m
Conditions
Min
Typ
Max
Unit
0.60 -
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 2.52 A
V
GS
= 0 V; I
D
= 1.1 mA
V
DS
= 10 V; I
D
= 110 mA
V
DS
= 28 V; I
D
= 660 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 110 mA
Peak device
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
65
1.5
1.6
-
-
-
-
-
-
1.9
2.0
-
20
-
145
-
2.3
2.4
1.4
-
140
215
V
V
V
A
A
nA
S
m
0.97 -
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.85 A
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 7.2 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 to 64 DPCH; f
1
= 2496 MHz; f
2
= 2690 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 320 mA (main); V
GS(amp)peak
= 0.6 V; T
case
= 25
C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 2496 MHz to 2690 MHz.
Symbol
G
p
RL
in
D
ACPR
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 28 W
P
L(AV)
= 28 W
P
L(AV)
= 28 W
P
L(AV)
= 28 W
Min
13.3
-
38
-
Typ
14.5
10
43
33
Max
-
6
-
28
Unit
dB
dB
%
dBc
Table 8.
RF characteristics
Test signal: pulsed CW; t
p
= 100
s;
= 10 %; f = 2690 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 320 mA (main); V
GS(amp)peak
= 0.6 V; T
case
= 25
C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 2496 MHz to 2690 MHz.
Symbol
P
L(3dB)
Parameter
output power at 3 dB gain
compression
Conditions
Min
119
Typ
148
Max
178
Unit
W
BLC8G27LS-140AV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 6 November 2014
3 of 14
NXP Semiconductors
BLC8G27LS-140AV
Power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
The BLC8G27LS-140AV is capable of withstanding a load mismatch corresponding to a
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 320 mA (main); V
GS(amp)peak
= 0.6 V; P
L
= 120 W (CW); f = 2496 MHz.
7.2 Impedance information
Table 9.
Typical impedance of main device
Measured load-pull data of main device; I
Dq
= 450 mA (main); V
DS
= 28 V.
f
(MHz)
2500
2600
2700
2500
2600
2700
[1]
[2]
Z
S
[1]
()
3.29
j6.00
2.73
j6.90
7.30
j7.07
3.29
j6.00
2.73
j6.90
7.30
j7.07
Z
L
[1]
()
2.69
j7.69
2.70
j7.69
2.69
j8.29
3.83
j6.95
3.99
j5.62
1.69
j4.80
P
L
[2]
(W)
86.89
82.22
82.41
75.75
59.73
38.38
D
[2]
(%)
58.88
56.91
54.82
63.55
62.15
61.19
G
p
[2]
(dB)
15.02
15.92
15.56
16.26
17.97
18.44
Maximum power load
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
Table 10. Typical impedance of peak device
Measured load-pull data of peak device; I
Dq
= 600 mA (peak); V
DS
= 28 V.
f
(MHz)
2500
2600
2700
2500
2600
2700
[1]
[2]
Z
S
[1]
()
3.45
j8.09
4.39
j7.53
6.42
j7.43
3.45
j8.09
4.39
j7.53
6.42
j7.43
Z
L
[1]
()
4.95
j9.05
6.05
j9.94
7.21
j9.74
3.99
j5.62
4.24
j6.14
4.46
j6.75
P
L
[2]
(W)
127.31
123.54
115.39
93.91
93.95
86.88
D
[2]
(%)
55.27
54.54
55.81
61.09
62.64
61.05
G
p
[2]
(dB)
15.24
15.69
15.83
17.18
17.71
17.23
Maximum power load
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
BLC8G27LS-140AV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 6 November 2014
4 of 14
NXP Semiconductors
BLC8G27LS-140AV
Power LDMOS transistor
Fig 1.
Definition of transistor impedance
7.3 VBW in Doherty operation
The BLC8G27LS-140AV shows 110 MHz (typical) video bandwidth in Doherty demo
board in 2600 MHz at V
DS
= 28 V; I
Dq
= 320 mA and V
GS(amp)peak
= 0.6 V.
7.4 Test circuit
Printed-Circuit Board (PCB): Rogers RO4350B;
r
= 3.66; thickness = 0.508 mm;
thickness copper plating = 35
m.
See
Table 11
for a list of components.
Fig 2.
Component layout for test circuit
BLC8G27LS-140AV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 6 November 2014
5 of 14
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