BLC8G22LS-450AV
Power LDMOS transistor
Rev. 3 — 2 June 2015
Product data sheet
1. Product profile
1.1 General description
450 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in an asymmetrical Doherty production test circuit.
V
DS
= 28 V; I
Dq
= 1000 mA (main); V
GS(amp)peak
= 0.50 V, unless otherwise specified.
Test signal
1-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
V
DS
(V)
28
P
L(AV)
(W)
85
G
p
(dB)
14
D
(%)
41
ACPR
(dBc)
33
[1]
Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
High-efficiency
Low thermal resistance providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency range
NXP Semiconductors
BLC8G22LS-450AV
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
[1]
Pinning
Description
drain2 (peak)
drain1 (main)
gate1 (main)
gate2 (peak)
source
video decoupling (peak)
video decoupling (main)
[1]
Simplified outline
Graphic symbol
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLC8G22LS-450AV
-
Description
air cavity plastic earless flanged package;
6 leads
Version
SOT1258-3
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS(amp)main
V
GS(amp)peak
T
stg
T
j
[1]
Parameter
drain-source voltage
main amplifier gate-source voltage
peak amplifier gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
0.5
65
[1]
Max
65
+13
+13
+150
225
Unit
V
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Recommended operating conditions
Table 5.
Symbol
T
case
Operating conditions
Parameter
case temperature
Conditions
Min
40
Max
+125
Unit
C
BLC8G22LS-450AV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 2 June 2015
2 of 15
NXP Semiconductors
BLC8G22LS-450AV
Power LDMOS transistor
6. Thermal characteristics
Table 6.
R
th(j-c)
Thermal characteristics
Conditions
V
DS
= 28 V; I
Dq
= 800 mA (main);
V
GS(amp)peak
= 0.60 V; T
case
= 80
C
P
L
= 85 W
P
L
= 110 W
0.29
0.27
K/W
K/W
Typ
Unit
thermal resistance from junction
to case
Symbol Parameter
7. Characteristics
Table 7.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
(BR)DSS
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
Parameter
Conditions
Min Typ Max Unit
65
1.5
1.7
-
-
-
-
-
-
1.9
2.0
-
40
-
72
-
2.3
2.5
2.8
-
V
V
V
A
A
S
Main device
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.2 mA
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
V
DS
= 10 V; I
D
= 220 mA
V
DS
= 28 V; I
D
= 900 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 11 A
280 nA
107 m
14.5 -
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.7 A
drain-source breakdown voltage V
GS
= 0 V; I
D
= 3.5 mA
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
V
DS
= 10 V; I
D
= 350 mA
V
DS
= 28 V; I
D
= 2200 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 17.5 A
Peak device
V
(BR)DSS
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
65
1.5
1.7
-
-
-
-
-
-
1.9
2.0
-
58
-
23
47
-
2.3
2.5
2.8
-
-
69
V
V
V
A
A
S
m
280 nA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 12.25 A
Table 8.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 to 64 DPCH; f
1
= 2112.5 MHz; f
2
= 2167.5 MHz; RF performance at
V
DS
= 28 V; I
Dq
= 1000 mA (main); V
GS(amp)peak
= 0.50 V; T
case
= 25
C; unless otherwise specified;
in an asymmetrical Doherty production test circuit at frequencies from 2110 MHz to 2170 MHz.
Symbol
G
p
RL
in
D
ACPR
BLC8G22LS-450AV
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 85 W
P
L(AV)
= 85 W
P
L(AV)
= 85 W
P
L(AV)
= 85 W
Min
13
-
37
-
Typ
14
12
41
33
Max
-
7
-
27
Unit
dB
dB
%
dBc
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 2 June 2015
3 of 15
NXP Semiconductors
BLC8G22LS-450AV
Power LDMOS transistor
Table 9.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 to 64 DPCH; f = 2115 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 1000 mA (main); V
GS(amp)peak
= 0.50 V; T
case
= 25
C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at a frequency of 2112.5 MHz.
Symbol
PAR
O
P
L(M)
Parameter
output peak-to-average ratio
peak output power
Conditions
P
L(AV)
= 115 W
P
L(AV)
= 115 W
Min
5.9
437
Typ
6.5
510
Max
-
-
Unit
dB
W
8. Test information
8.1 Ruggedness in Doherty operation
The BLC8G22LS-450AV is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions:
•
V
DS
= 28 V; I
Dq
= 800 mA; V
GS(amp)peak
= 0.50 V; f = 2112.5 MHz:
1-carrier W-CDMA; P
L
= 141 W (5 dB OBO); 100 % clipping
•
V
DS
= 32 V; I
Dq
= 800 mA; V
GS(amp)peak
= 0.50 V; f = 2112.5 MHz:
1-carrier W-CDMA; P
L
= 141 W (5 dB OBO); 100 % clipping
8.2 Impedance information
Table 10. Typical impedance of main device
Measured load-pull data of main device; I
Dq
= 1300 mA (main); V
DS
= 28 V; pulsed CW (t
p
= 100
s;
= 10 %).
f
(MHz)
2110
2140
2170
2110
2140
2170
[1]
[2]
Z
S
[1]
()
1.2
j5.1
1.7
j5.4
1.9
j5.6
1.2
j5.1
1.7
j5.4
1.9
j5.6
Z
L
[1]
()
0.7
j4.4
0.8
j4.6
0.8
j4.7
1.4
j3.4
1.4
j4.0
1.4
j4.0
P
L
[2]
(W)
217
214
207
166
159
151
D
[2]
(%)
49.1
49.2
48.8
58.1
57.4
56.4
G
p
[2]
(dB)
16.8
17.1
17.3
18.9
19.1
19.4
Maximum power load
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
At 3 dB gain compression.
Table 11. Typical impedance of peak device
Measured load-pull data of main device; I
Dq
= 2300 mA (main); V
DS
= 28 V; pulsed CW (t
p
= 100
s;
= 10 %).
f
(MHz)
2110
2140
BLC8G22LS-450AV
Z
S
[1]
()
0.7
j5.8
0.9
j6.0
Z
L
[1]
()
2.1
j6.2
2.1
j6.3
P
L
[2]
(W)
351
346
D
[2]
(%)
50.0
51.0
G
p
[2]
(dB)
16.9
17.3
Maximum power load
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 2 June 2015
4 of 15
NXP Semiconductors
BLC8G22LS-450AV
Power LDMOS transistor
Table 11. Typical impedance of peak device
…continued
Measured load-pull data of main device; I
Dq
= 2300 mA (main); V
DS
= 28 V; pulsed CW (t
p
= 100
s;
= 10 %).
f
(MHz)
2170
2110
2140
2170
[1]
[2]
Z
S
[1]
()
1.3
j6.4
0.7
j5.8
0.9
j6.0
1.3
j6.4
Z
L
[1]
()
2.4
j6.6
1.6
j5.1
1.6
j5.1
1.7
j5.4
P
L
[2]
(W)
342
274
261
270
D
[2]
(%)
49.1
58.0
57.5
56.6
G
p
[2]
(dB)
17.2
18.8
19.0
18.9
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
At 3 dB gain compression.
Fig 1.
Definition of transistor impedance
8.3 Recommended impedances for Doherty design
Table 12. Typical impedance of main at 1 : 1 load
Measured load-pull data of main device; I
Dq
= 1300 mA (main); V
DS
= 28 V; pulsed CW (t
p
= 100
s;
= 10 %).
f
(MHz)
2110
2140
2170
[1]
[2]
Z
S
[1]
()
1.2
j5.1
1.7
j5.4
1.9
j5.6
Z
L
[1]
()
1.0
j4.5
1.0
j4.5
1.0
j4.7
P
L(3dB)
[2]
(W)
182
182
182
D
[2]
(%)
45
45
45
G
p
[2]
(dB)
17.0
17.1
17.3
Z
S
and Z
L
defined in
Figure 1.
At P
L(AV)
= 85 W.
Table 13. Typical impedance of main device at 1 : 2.5 load
Measured load-pull data of main device; I
Dq
= 1300 mA (main); V
DS
= 28 V; pulsed CW (t
p
= 100
s;
= 10 %).
f
(MHz)
2110
2140
2170
[1]
[2]
BLC8G22LS-450AV
Z
S
[1]
()
1.2
j5.1
1.7
j5.4
1.9
j5.6
Z
L
[1]
()
1.8
j3.6
2.0
j3.6
2.1
j3.6
P
L(3dB)
[2]
(W)
100
100
100
D
[2]
(%)
45
45
45
G
p
[2]
(dB)
19.0
19.0
19.0
Z
S
and Z
L
defined in
Figure 1.
At P
L(AV)
= 85 W.
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 2 June 2015
5 of 15
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