d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
Document Number: 63773
S12-0306-Rev. A, 13-Feb-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiRA02DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
rss
/C
iss
Ratio
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs,
T
J
= 25 °C
I
S
= 5 A
0.73
51
46
25
26
T
C
= 25 °C
45
100
1.1
100
90
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
0.3
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
6150
1615
141
0.023
78
34.3
13.6
4.1
47.8
1.05
16
10
42
8
31
18
38
10
2.1
32
20
80
16
60
35
75
20
ns
0.046
117
52
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= + 20, - 16 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 15 A
40
0.00165 0.00200
0.00215 0.00270
110
1.1
30
18
- 5.7
2.2
± 100
1
10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63773
S12-0306-Rev. A, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiRA02DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 4 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
60
6
T
C
= 25
°C
4
40
V
GS
= 3 V
20
V
GS
= 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
2
T
C
= 125
°C
T
C
= - 55
°C
0
0.0
0.8
1.6
2.4
3.2
4.0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.0025
7000
Transfer Characteristics
C
iss
0.0023
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
0.0021
C - Capacitance (pF)
5600
4200
C
oss
2800
0.0019
0.0017
V
GS
= 10 V
1400
C
rss
0.0015
0
16
32
48
64
80
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
10
I
D
= 10 A
V
GS
-
Gate-to-Source
Voltage (V)
R
DS(on)
- On-Resistance (Normalized)
8
V
DS
= 15 V
6
1.5
1.7
I
D
= 15 A
Capacitance
V
GS
= 10 V
1.3
V
GS
= 4.5 V
1.1
4
V
DS
= 10 V
V
DS
= 20 V
2
0.9
0
0
16
32
48
Q
g
- Total
Gate
Charge (nC)
64
80
0.7
- 50
- 25
0
25
50
75
100
125
150
Gate Charge
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (°C)
Document Number: 63773
S12-0306-Rev. A, 13-Feb-12
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiRA02DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.010
I
D
= 15 A
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
0.008
0.006
0.1
0.004
T
J
= 125
°C
0.002
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance (V)
160
I
D
= 5 mA
- 0.4
I
D
= 250 μA
- 0.7
Power (W)
150
- 0.1
120
80
40
- 1.0
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
100μs
10
I
D
- Drain Current (A)
I
DM
Limited
I
D
Limited
1 ms
10 ms
1 Limited by R
DS(on)
*
100 ms
1s
0.1
T
A
= 25 °C
Single
Pulse
0.01
0.01
10 s
DC
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
Document Number: 63773
S12-0306-Rev. A, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiRA02DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
130
104
I
D
- Drain Current (A)
78
52
Limited by Package
26
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
60
2.5
48
2.0
Power (W)
24
Power (W)
0
25
50
75
100
125
150
36
1.5
1.0
12
0.5
0
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63773
S12-0306-Rev. A, 13-Feb-12
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
QuartusII 为何不能 打开别人的project？打开QuartusII后选择“FILE”－>“open project”选择项目后就出现错误提示：“Error: Can't open project -- you do not have permission to write to ......
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