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CMLT7820GTRLEADFREE: 产品描述Transistor; 产品类别分立半导体晶体管; 文件大小509KB，共2页; 制造商Central Semiconductor; 标准

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CMLT7820GTRLEADFREE概述

Transistor

CMLT7820GTRLEADFREE规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Central Semiconductor
包装说明	,
Reach Compliance Code	compliant
最大集电极电流 (IC)	1 A
配置	Single
最小直流电流增益 (hFE)	100
JESD-609代码	e3
湿度敏感等级	1
最高工作温度	150 °C
极性/信道类型	PNP
最大功率耗散 (Abs)	0.25 W
表面贴装	YES
端子面层	Matte Tin (Sn)
标称过渡频率 (fT)	150 MHz

CMLT7820GTRLEADFREE文档预览

CMLT7820G

SURFACE MOUNT

VERY LOW VCE(SAT)

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT7820G is

a very low VCE(SAT) PNP Transistor, designed for

applications where small size and efficiency are the

prime requirements. Packaged in a space saving

PICOmini™ SOT-563 surface mount package, this

component provides performance characteristics

suitable for the most demanding size constrained

applications.

MARKING CODE: 78G

FEATURES:

•

Device is

Halogen Free

by design

•

High Current (IC=1.0A)

•

VCE(SAT)=0.34V MAX @ IC=1.0A

SOT-563 CASE

APPLICATIONS:

•

DC/DC Converters

•

Voltage Clamping

•

Protection Circuits

•

Battery powered Cell Phones, Pagers,

Digital Cameras, PDAs, Laptops, etc.

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

•

PICOmini™ SOT563 surface mount package

•

Complementary NPN device

CMLT3820G

SYMBOL

VCBO

VCEO

VEBO

ICM

TJ, Tstg

5.0

1.0

2.0

300

250

-65 to +150

500

MAX

100

UNITS

°C

°C/W

UNITS

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=60V

IEBO

VEB=5.0V

BVCBO

IC=100µA

BVCEO

IC=10mA

BVEBO

IE=100µA

5.0

VCE(SAT)

IC=100mA, IB=1.0mA

VCE(SAT)

IC=500mA, IB=50mA

VCE(SAT)

IC=1.0A, IB=100mA

VBE(SAT)

IC=1.0A, IB=50mA

VBE(ON)

VCE=5.0V, IC=1.0A

hFE

VCE=5.0V, IC=1.0mA

200

hFE

VCE=5.0V, IC=500mA

150

hFE

VCE=5.0V, IC=1.0A

100

VCE=10V, IC=50mA

150

Cob

VCB=10V, IE=0, f=1.0MHz

0.175

0.18

0.34

1.1

0.9

MHz

R2 (20-January 2010)

CMLT7820G

SURFACE MOUNT

VERY LOW VCE(SAT)

PNP SILICON TRANSISTOR

SOT-563 CASE - MECHANICAL OUTLINE

PIN CONFIGURATION

LEAD CODE:

1) Collector

2) Collector

3) Base

4) Emitter

5) Collector

6) Collector

Pins 1, 2, 5 and 6 are common.

MARKING CODE:78G

R2 (20-January 2010)

w w w. c e n t r a l s e m i . c o m

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CMLT7820GTRLEADFREE相似产品对比

	CMLT7820GTRLEADFREE	CMLT7820GTR	CMLT7820GBK	CMLT7820GBKLEADFREE
描述	Transistor	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PICOMINI-6	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PICOMINI-6	Transistor
是否Rohs认证	符合	不符合	不符合	符合
厂商名称	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Reach Compliance Code	compliant	not_compliant	not_compliant	compliant
最大集电极电流 (IC)	1 A	1 A	1 A	1 A
配置	Single	SINGLE	SINGLE	Single
最小直流电流增益 (hFE)	100	100	100	100
JESD-609代码	e3	e0	e0	e3
最高工作温度	150 °C	150 °C	150 °C	150 °C
极性/信道类型	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	0.25 W	0.25 W	0.25 W	0.25 W
表面贴装	YES	YES	YES	YES
端子面层	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
标称过渡频率 (fT)	150 MHz	150 MHz	150 MHz	150 MHz

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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