Dual Wideband, Low Noise, Voltage Feedback Op Amp 10-CFP -55 to 125
| 参数名称 | 属性值 |
| Brand Name | Texas Instruments |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 零件包装代码 | DFP |
| 包装说明 | SOP, |
| 针数 | 10 |
| Reach Compliance Code | _compli |
| ECCN代码 | EAR99 |
| Factory Lead Time | 6 weeks |
| 放大器类型 | OPERATIONAL AMPLIFIER |
| 架构 | VOLTAGE-FEEDBACK |
| 最大平均偏置电流 (IIB) | 20 µA |
| 最小共模抑制比 | 57 dB |
| 标称共模抑制比 | 62 dB |
| 最大输入失调电压 | 2600 µV |
| JESD-30 代码 | R-CDSO-G10 |
| JESD-609代码 | e0 |
| 长度 | 6.858 mm |
| 湿度敏感等级 | 1 |
| 负供电电压上限 | -7 V |
| 功能数量 | 2 |
| 端子数量 | 10 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | SOP |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Qualified |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 2.34 mm |
| 标称压摆率 | 550 V/us |
| 最大压摆率 | 12.5 mA |
| 供电电压上限 | 7 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | BIPOLAR |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 标称均一增益带宽 | 300000000 kHz |
| 宽度 | 6.12 mm |
| 5962-0254501MZA | 5962-0254501VPA | LMH6628J-QMLV | LMH6628WG-QML | LMH6628WGFQMLV | |
|---|---|---|---|---|---|
| 描述 | Dual Wideband, Low Noise, Voltage Feedback Op Amp 10-CFP -55 to 125 | Dual Wideband, Low Noise, Voltage Feedback Op Amp 8-CDIP -55 to 125 | Dual Wideband, Low Noise, Voltage Feedback Op Amp 8-CDIP -55 to 125 | Dual Wideband, Low Noise, Voltage Feedback Op Amp 10-CFP -55 to 125 | Dual Wideband, Low Noise, Voltage Feedback Op Amp 10-CFP -55 to 125 |
| Brand Name | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| 厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
| 零件包装代码 | DFP | DIP | DIP | SOIC | SOIC |
| 包装说明 | SOP, | DIP, | DIP, DIP8,.3 | SOP, SOP10,.45 | CERAMIC, SOIC-10 |
| 针数 | 10 | 8 | 10 | 10 | 10 |
| Reach Compliance Code | _compli | _compli | _compli | _compli | _compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 放大器类型 | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER |
| 架构 | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK |
| 最大平均偏置电流 (IIB) | 20 µA | 20 µA | 10 µA | 10 µA | 20 µA |
| 最小共模抑制比 | 57 dB | 57 dB | 57 dB | 57 dB | 57 dB |
| 标称共模抑制比 | 62 dB | 62 dB | 62 dB | 62 dB | 62 dB |
| 最大输入失调电压 | 2600 µV | 2600 µV | 2000 µV | 2000 µV | 2600 µV |
| JESD-30 代码 | R-CDSO-G10 | R-CDIP-P8 | R-GDIP-T8 | R-CDSO-G10 | R-CDSO-G10 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 6.858 mm | 10.16 mm | 10.16 mm | 6.858 mm | 6.858 mm |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 |
| 负供电电压上限 | -7 V | -7 V | -7 V | -7 V | -7 V |
| 功能数量 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 10 | 8 | 10 | 10 | 10 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | SOP | DIP | DIP | SOP | SOP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Qualified | Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
| 座面最大高度 | 2.34 mm | 5.08 mm | 5.08 mm | 2.34 mm | 2.33 mm |
| 标称压摆率 | 550 V/us | 550 V/us | 550 V/us | 550 V/us | 550 V/us |
| 最大压摆率 | 12.5 mA | 12.5 mA | 12.5 mA | 12.5 mA | 12.5 mA |
| 供电电压上限 | 7 V | 7 V | 7 V | 7 V | 7 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | NO | NO | YES | YES |
| 技术 | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING | PIN/PEG | THROUGH-HOLE | GULL WING | GULL WING |
| 端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 标称均一增益带宽 | 300000000 kHz | 300000000 kHz | 300000 kHz | 300000 kHz | 300000 kHz |
| 宽度 | 6.12 mm | 7.62 mm | 6.502 mm | 6.121 mm | 6.12 mm |
| 是否无铅 | 不含铅 | 不含铅 | - | - | 不含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | - | - | 不符合 |
| Factory Lead Time | 6 weeks | 6 weeks | - | 6 weeks | - |
| 标称负供电电压 (Vsup) | - | -5 V | -5 V | -5 V | -5 V |
| 25C 时的最大偏置电流 (IIB) | - | - | 10 µA | 10 µA | 10 µA |
| 频率补偿 | - | - | YES | YES | YES |
| 低-偏置 | - | - | NO | NO | NO |
| 低-失调 | - | - | NO | NO | NO |
| 微功率 | - | - | NO | NO | NO |
| 封装等效代码 | - | - | DIP8,.3 | SOP10,.45 | SOP10,.45 |
| 功率 | - | - | NO | NO | NO |
| 电源 | - | - | +-5 V | +-5 V | +-5 V |
| 可编程功率 | - | - | NO | NO | NO |
| 总剂量 | - | - | 300k Rad(Si) V | 300k Rad(Si) V | 300k Rad(Si) V |
| 最小电压增益 | - | - | 450 | 450 | 450 |
| 宽带 | - | - | YES | YES | YES |
| 器件名 | 厂商 | 描述 |
|---|---|---|
| LMH6628WG-QML | Texas Instruments(德州仪器) | Dual Wideband, Low Noise, Voltage Feedback Op Amp 10-CFP -55 to 125 |
| LMH6628WGFQMLV | Texas Instruments(德州仪器) | Dual Wideband, Low Noise, Voltage Feedback Op Amp 10-CFP -55 to 125 |
| 5962F0254501VZA | Texas Instruments(德州仪器) | Dual Wideband, Low Noise, Voltage Feedback Op Amp 10-CFP -55 to 125 |
| LMH6628WG-QMLV | Texas Instruments(德州仪器) | DUAL OP-AMP, 2600uV OFFSET-MAX, 300MHz BAND WIDTH, CDSO10, CERAMIC, SOIC-10 |
| LMH6628WGFQML | Texas Instruments(德州仪器) | DUAL OP-AMP, 2600uV OFFSET-MAX, 300MHz BAND WIDTH, CDSO10, CERAMIC, SOIC-10 |
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