JMnic
Product Specification
Silicon PNP Power Transistors
2SB649 2SB649A
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD669/669A
・High
breakdown voltage V
CEO:
-120/-160V
・High
current -1.5A
・Low
saturation voltage,excellent h
FE
linearity
APPLICATIONS
・For
low-frequency power
amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SB649
V
CBO
Collector-base voltage
2SB649A
2SB649
V
CEO
Collector-emitter voltage
2SB649A
V
EBO
I
C
I
CM
P
D
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25℃
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
℃
℃
Open collector
Open base
-160
-5
-1.5
-3
1
W
V
A
A
Open emitter
-180
-120
V
CONDITIONS
VALUE
-180
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB649
I
C
=-10mA; R
BE
=∞
2SB649A
2SB649
I
C
=-1m A ;I
E
=0
2SB649A
I
E
=-1mA ;I
C
=0
I
C
=-0.5A ;I
B
=-50mA
I
C
=-150mA ; V
CE
=5V
V
CB
=-160V; I
E
=0
2SB649
h
FE-1
DC current gain
2SB649A
h
FE-2
f
T
C
OB
DC current gain
Transition frequency
Collector output capacitance
I
C
=-0.5A ; V
CE
=-5V
I
C
=-150mA ; V
CE
=-5V
f=1MHz ; V
CB
=-10V
I
C
=-150mA ; V
CE
=-5V
CONDITIONS
2SB649 2SB649A
MIN
-120
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-160
-180
V
-180
-5
-1.0
-1.5
-10
60
60
30
140
27
MHz
pF
320
200
V
V
V
μA
V
(BR)CBO
Collector-base
breakdown voltage
V
(BR)EBO
V
CEsat
V
BE
I
CBO
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
h
FE
Classifications
h
FE-1
2SB649
2SB649A
B
60-120
60-120
C
100-200
100-200
D
160-320
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB649 2SB649A
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB649 2SB649A
4
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