128K x 8 SRAM
MSM8128 - 70/85/10/12
11403 West Bernado Court, Suite 100, San Diego, CA 92127.
Tel No: (001) 858 674 2233, Fax No: (001) 858 674 2230
Issue 4.4 : February 2000
Description
The MSM8128 is a 1Mbit monolithic SRAM
organised as 128K x 8. It is currently available in
2 standard formats, with access times of 70, 85,
100, 120ns. It has a low power standby version
and has 3.0V battery backup capability. It is
directly TTL compatible and has common data
inputs and outputs.
Two pinout variants (single and dual CS) are
available.
All versions may be screened in accordance with
MIL-STD-883.
131,072 x 8 CMOS Static RAM
Features
Access Times of 70/85/100/120 ns
JEDEC standard Dual CS footprints.
Operating Power
550 mW (max)
Low Power Standby (-L) 2.2 mW (max)
Low Voltage Data Retention.
Completely Static Operation
Directly TTL compatible.
May be processed in accordance with MIL-STD-883
Block Diagram
Pin Definition
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
GND
1
2
3
4
5
6
7
8 TOP VIEW
S,V
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
D7
D6
D5
D4
D3
MEMORY ARRAY
512 X 2048
Package Details
Pin Count
Description
32
32
0.6" Dual-in-Line (DIP)
0.1" Vertical-in-LIne (VIL
TM
)
Package Type
S
V
Package details on pages 8 & 9.
See Page 9 for SX, VX
Pin Functions
A0-A16
Address Inputs
D0-7
Data Input/Output
CS1
Chip Select 1
CS2
Chip Select 2
OE
Output Enable
WE
Write Enable
NC
No Connect
V
CC
Power (+5V)
GND
Ground
MSM8128 - 70/85/10/12
Issue 4.4 : February 2000
DC OPERATING CONDITIONS
Absolute Maximum Ratings
Voltage on any pin relative to V
SS
Power Dissipation
Storage Temperature
Notes :
V
T
P
T
T
STG
-0.5V
-55
to
1
to
+7.0
+150
V
W
o
C
(1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
(2) V
T
can be -3.0V pulse of less than 50ns.
Recommended Operating Conditions
min
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
V
CC
V
IH
V
IL
T
A
T
AI
T
AM
4.5
2.2
-0.3
0
-40
-55
typ
5.0
-
-
-
-
-
max
5.5
5.8
0.8
70
85
125
V
V
V
o
C
o
C (I suffix)
o
C (M,
MB
suffix)
DC Electrical Characteristics
(V
CC
= 5.0V±10%, T
A
=-55°C to +125°C)
Parameter
Input Leakage Current
Output Leakage Current
Average Supply Current
Standby Supply Current
-L Part
Output Voltage
Symbol
I
LI
I
l/O
I
CC1
I
SB1
I
SB2
V
OL
V
OH
Test Condition
V
IH
=0V to V
cc
CS1=V
IH
, CS2 =V
IL
, V
I/O
=0V to V
cc
,OE=V
IH
Min. Cycle, V
IN
=V
IL
or V
IH
CS1=V
IH
,CS2 = V
IL
, I/P's static
CS1
≥
V
CC
-0.2V, 0.2V
≥
CS2
≥
V
CC
-0.2V , V
IN
≥
0.2V
I
OL
= 2.1 mA
I
OH
= -1.0 mA
min
-1
-1
-
-
-
-
2.4
typ
-
-
-
-
-
-
-
max Unit
1
1
100
3
400
0.4
-
µA
µA
mA
mA
mA
V
V
Capacitance
(V
CC
=5V±10%,T
A
=25
o
C)
Parameter
I/P Capacitance
I/O Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
=0V
V
I/O
=0V
typ
-
-
max
8
10
Unit
pF
pF
Note: This parameter is sampled and not 100% tested.
2
MSM8128 - 70/85/10/12
Issue 4.4 : February 2000
Operating Modes
The table below shows the logic inputs required to control the MSM8128 SRAM.
Mode
Not Selected
Not Selected
Output Disable
Read
Write
CS1
1
X
0
0
0
CS2
X
0
1
1
1
OE
X
X
1
0
X
WE
X
X
1
1
0
V
CC
Current
I
SB1
,I
SB2
I
SB
,I
SB1
I
CC
I
CC
I
CC
X = Don't Care
I/O Pin
High Z
High Z
High Z
D
OUT
D
IN
Reference Cycle
Power Down
Power Down
Read Cycle
Write Cycle
1 = V
IH
,
0 = V
IL
,
Low V
cc
Data Retention Characteristics - L Version Only
(T
A
=-55°C to +125
o
C)
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention
Operation Recovery Time
Symbol Test Condition
V
DR
I
CCDR
t
CDR
t
R
CS1
≥
V
CC
-0.2V, CS2
≥
V
CC
-0.2V or
0V
≤
CS2
≤
0.2V. V
IN
≥
0V
V
CC
=3.0V,V
IN
≥
0V, CS1
≥
V
CC
-0.2V,
CS2
≥
V
CC
-0.2V or 0V
≤
CS2
≤
0.2V.
See Retention Waveform
See Retention Waveform
min
2.0
-
0
5
typ
-
-
-
-
max
-
600
-
-
Unit
V
µA
ns
ms
Notes (1) CS2 controls address buffer, WE buffer, CS1 buffer and OE buffer. If CS2 controls data retention mode,
Vin levels (WE,OE,CS1,I/O) can be in the high impedance state. If CS1 controls Data Retention mode,
CS2 must be
≥
V
CC
- 0.2V or 0V
≤
CS2
≤
0.2V. The other input levels (address, WE,OE,I/O) can be in the
high impedance state.
AC Test Conditions
* Input pulse levels: 0V to 3.0V
* Input rise and fall times: 5ns
* Input and Output timing reference levels: 1.5V
* Output load: See Load Diagram
* V
cc
=5V±10%
Output Load
I/O Pin
166
Ω
1.76V
30pF
3
MSM8128 - 70/85/10/12
Issue 4.4 : February 2000
AC OPERATING CONDITIONS
Read Cycle
Parameter
Read Cycle Time
Address Access Time
Chip Select (CS1) Access Time
(2)
Chip Select (CS2) Access Time
(2)
Output Enable to Output Valid
Output Hold from Address Change
Chip Selection (CS1) to Output in Low Z
Chip Selection (CS2) to Output in Low Z
Output Enable to Output in Low Z
Chip Disable (CS1) to Output in High Z
(3)
Chip Disable (CS2) to Output in High Z
(3)
Output Disable to Output in High Z
(3)
Symbol
t
RC
t
AA
t
ACS1
t
ACS2
t
OE
t
OH
t
CLZ1
t
CLZ2
t
OLZ
t
CHZ1
t
CHZ2
t
OHZ
70
min max
70
-
-
-
-
5
10
10
5
0
0
0
-
70
70
70
35
-
-
-
-
35
35
30
85
min max
85
-
-
-
-
5
10
10
5
0
0
0
-
85
85
85
45
-
-
-
-
35
35
30
10
min max
100
-
-
-
-
10
10
10
5
0
0
0
-
100
100
100
50
-
-
-
-
35
35
35
12
min max Unit
120
-
-
-
-
10
10
10
5
0
0
0
-
120
120
120
60
-
-
-
-
45
45
45
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle
Parameter
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time (WE, CS1)
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR1
t
WR2
t
WHZ
t
DW
t
DH
t
OW
70
min max
70
60
60
0
50
5
5
0
30
0
5
-
-
-
-
-
-
-
30
-
-
-
85
min max
85
75
75
0
60
5
5
0
35
0
5
-
-
-
-
-
-
-
30
-
-
-
10
min max
100
85
85
0
70
5
5
0
40
0
5
-
-
-
-
-
-
-
35
-
-
-
12
min max Unit
120
100
100
0
70
5
5
0
45
0
5
-
-
-
-
-
-
-
40
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(CS2)
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
4
MSM8128 - 70/85/10/12
Issue 4.4 : February 2000
Read Cycle Timing Waveform
(1,2 )
t
RC
Address
t
AA
OE
t
OE
t
OLZ
t
CLZ1
t
ACS1 (2)
t
CHZ1 (3)
t
OH
CS1
CS2
t
ACS2 (2)
t
CLZ2
t
OHZ (3)
Dout
Data Valid
t
CHZ2 (3)
Notes:
(1) WE is High for Read Cycle.
(2) Address valid prior to or coincident with CS1 transition low or CS2 high.
(3) t
CHZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not
referenced to output voltage levels. At any given temperature and voltage condition, t
CHZ
max is less than
t
CLZ
min both for a given device and from device to device. This parameter is sampled and not 100% tested.
5
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