http://www.fujielectric.com/products/semiconductor/
2MBI450VE-120-50
IGBT MODULE (V series)
1200V / 450A / 2 in one package
High speed switching
Voltage drive
Low Inductance module structure
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Symbols
V
CES
V
GES
Ic
Collector current
IGBT Modules
Features
Applications
Maximum Ratings and Characteristics
Items
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Conditions
Tc=100°C
Tc=25°C
Continuous
1ms
1ms
1 device
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions)
T
jop
Case temperature
T
C
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1)
V
iso
Mounting (*2)
Screw torque
-
Terminals (*3)
AC : 1min.
Maximum ratings
1200
±20
450
520
900
450
900
3350
175
150
125
-40 ~ +125
2500
6.0
5.0
Units
V
V
W
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5-5.0 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
V
CE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
V
F
(chip)
trr
Symbols
Rth(j-c)
Rth(c-f)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Conditions
V
GE
= 0V, V
CE
= 1200V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 450mA
V
GE
= 15V
I
C
= 450A
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 600V
L
S
= 30nH
I
C
= 450A
V
GE
= ±15V
R
G
= 1Ω
Tj = 150°C
V
GE
= 0V
I
F
= 450A
I
F
= 450A
Conditions
IGBT
FWD
with Thermal Compound
Collector-Emitter saturation voltage
Inverter
Input capacitance
Turn-on time
Turn-off time
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Forward on voltage
Reverse recovery time
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min.
typ.
max.
-
-
2.0
-
-
800
6.0
6.5
7.0
-
2.05
2.60
-
2.40
-
2.45
-
1.80
2.15
-
2.15
-
2.20
-
36
-
-
0.60
-
-
0.20
-
-
0.05
-
-
0.80
-
-
0.08
-
-
1.85
2.50
-
2.00
-
1.95
-
1.70
2.15
-
1.90
-
1.85
-
0.15
-
Characteristics
min.
typ.
max.
-
-
0.045
-
-
0.077
-
0.0125
-
Units
mA
nA
V
V
nF
µs
V
µs
Units
°C/W
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*4)
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI450VE-120-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1000
900
800
Collector current: Ic [A]
700
600
500
400
300
200
100
0
0
1
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
8V
10V
Collector current: Ic [A]
V
GE
=20V 15V
12V
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
1000
900
800
700
600
500
400
300
200
100
0
0
1
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
8V
10V
V
GE
= 20V
15V
12V
Collector current vs. Collector-Emitter voltage (typ.)
V
GE
= 15V / chip
1000
150°C
900
800
Collector Current: Ic [A]
700
600
500
400
300
200
100
0
0
1
2
3
4
Collector-Emitter Voltage: V
CE
[V]
5
Tj=25°C 125°C
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
10
Collector-Emitter Voltage: V
CE
[V]
8
6
4
Ic=900A
Ic=450A
Ic=225A
5
10
15
20
25
2
0
Gate-Emitter Voltage: V
GE
[V]
Gate Capacitance vs. Collector-Emitter Voltage
V
GE
= 0V, ƒ= 1MHz, Tj= 25°C
Gate Capacitance: Cies, Coes, Cres [nF]
***
Collector-Emitter voltage: V
CE
[200V/div]
Gate-Emitter voltage: V
GE
[5V/div]
100
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=450A, Tj= 25°C
Cies
10
V
CE
V
GE
Cres
Coes
1
0
5
10
15
20
25
30
0
1000
2000
3000
4000
5000
Collector-Emitter voltage: V
CE
[V]
Gate charge: Qg [nC]
2
2MBI450VE-120-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V, V
GE
=±15V, R
G
=1Ω, Tj=125°C
10000
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
Switching time vs. Collector current (typ.)
Vcc=600V, V
GE
=±15V, R
G
=1Ω, Tj=150°C
10000
1000
toff
ton
tr
1000
toff
ton
tr
100
tf
100
tf
10
0
200
400
600
800
1000
10
0
200
400
600
800
1000
Collector current: Ic [A]
Collector current: Ic [A]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=450A, V
GE
=±15V, Tj=125°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
10000
Switching time: ton, tr, toff, tf [nsec]
Switching loss vs. Collector current (typ.)
Vcc=600V, V
GE
=±15V, R
G
=1Ω, Tj=125°C,150°C
100
80
60
40
20
0
0
200
400
600
800
1000
Tj=125
o
C
Tj=150
o
C
Eoff
Eon
1000
toff
ton
tr
100
tf
Err
10
0.1
1
10
100
Gate resistance: R
G
[Ω]
Collector current: Ic [A]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=450A, V
GE
=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
200
Tj=125
C
Tj=150
o
C
Collector current: Ic [A]
Eon
o
Reverse bias safe operating area (max.)
+V
GE
=15V, -V
GE
=15V, R
G
=1Ω, Tj=150°C
1000
900
800
700
600
500
400
300
200
100
0
150
100
Eoff
50
Err
0
0
1
10
100
Gate resistance: R
G
[Ω]
0
200
400
600
800 1000
1200
1400
Collector-Emitter voltage: V
CE
[V]
3
2MBI450VE-120-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Forward Current vs. Forward Voltage (typ.)
chip
1000
800
Forward current: I
F
[A]
700
600
500
400
300
200
100
0
0
1
2
3
Forward on voltage: V
F
[V]
150°C
125°C
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
900
Tj=25°C
Reverse Recovery Characteristics (typ.)
Vcc=600V, V
GE
=±15V, R
G
=1Ω, Tj=125°C
10000
1000
lrr
trr
100
10
0
200
400
600
800
1000
Forward current: I
F
[A]
Reverse Recovery Characteristics (typ.)
Vcc=600V, V
GE
=±15V, R
G
=1Ω, Tj=150°C
Thermal resistanse: Rth(j-c) [°C/W]
***
10000
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Transient Thermal Resistance (max.)
1
1000
lrr
trr
0.1
FWD
IGBT
0.01
100
10
0
200
400
600
800
1000
Forward current: I
F
[A]
0.001
0.001
0.01
0.1
1
Pulse Width : Pw [sec]
FWD safe operating area (max.)
Tj=150°C
1000
Reverse recovery current: Irr [A]
900
800
700
600
500
400
300
200
100
0
Pmax=600kW
0
200
400
600
800 1000 1200 1400
Collector-Emitter voltage: V
CE
[V]
4
2MBI450VE-120-50
Outline Drawings, mm
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Equivalent Circuit Schematic
C1
G1
E1
C2E1
G2
E2
E2
5
单片机
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