MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Features
GaN depletion mode HEMT microwave transistor
Common source configuration
Broadband Class AB operation
Thermally enhanced Cu/Mo/Cu package
RoHS Compliant
+50V Typical Operation
Preliminary
27 Sept 11
MTTF of 114 years
(Channel Temperature < 200°C)
EAR99 Export Classification
Application
Civilian and Military Pulsed Radar
Product Description
The MAGX-003135-180L00 is a gold metalized matched Gallium
Nitride (GaN) on Silicon Carbide RF power transistor optimized
for civilian and military radar pulsed applications between 3100 -
3500 MHz. Using state of the art wafer fabrication processes,
these high performance transistors provide high gain, efficiency,
bandwidth, ruggedness over a wide bandwidth for today’s
demanding application needs. The MAGX-003135-180L00 is
constructed using a thermally enhanced Cu/Mo/Cu flanged
ceramic package which provides excellent thermal performance.
High breakdown voltages allow for reliable and stable operation
in extreme mismatched load conditions unparalleled with older
semiconductor technologies.
Typical RF Performance
60V, 300us, 10%
Freq.
(MHz)
3100
3300
3500
Pin
(W Peak)
Pout
(W Peak)
60V, 100us, 10%
RL
(dB)
-16
-12
-18
Gain
(dB)
11.5
11.4
11.5
Eff
(%)
41
40
41
Freq.
(MHz)
3100
3300
3500
Pin
(
W
14
14
14
Pout
(
W Peak)
217
213
208
Gain
(dB)
11.9
11.8
11.7
RL
(dB)
-17
-12
-17
Eff
(%)
43
42
42
14
14
14
200
192
195
Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows:
Vdd=60V, Idq=500mA (pulsed gate bias), F=3.1 - 3.5 GHz, Pulse Width=300us, Duty=10%.
1
Ordering Information
MAGX-003135-180L00
MAGX-003135-SB3PPR
180W GaN Power Transistor
Evaluation Fixture
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (Vdd)
Supply Voltage (Vgg)
Supply Current (Id1)
Input Power (Pin)
Absolute Max. Junction/Channel Temp
MTTF (T
J
<200°C)
Pulsed Power Dissipation (Pavg) at 85 ºC
Thermal Resistance, (Tchannel = 200 ºC)
Pulsed 500uS, 10% Duty cycle
Operating Temp
Storage Temp
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
+65V
-8 to 0V
10A
+37 dBm
200 ºC
114 years
192 W
0.6 ºC/W
-40 to +95C
-65 to +150C
See solder reflow profile
50 V
>250 V
MSL1
Preliminary
27 Sept 11
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Test Conditions
Symbol
Min
Typ
Max
Units
V
GS
= -8V, V
DS
= 175V
V
DS
= 5V, I
D
= 30mA
V
DS
= 5V, I
D
= 3.5mA
I
DS
V
GS (th)
G
M
-
-5
5.0
-
-3
-
12
-2
-
mA
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Not applicable - Input internally matched
V
DS
= 50V, V
GS
= -8V, F = 1MHz
V
DS
= 50V, V
GS
= -8V, F = 1MHz
C
GS
C
OSS
C
RSS
N/A
-
-
N/A
26.1
2.3
N/A
30.3
4.7
pF
pF
pF
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Electrical Specifications: T
C
= 25 ± 5°C (
Room Ambient
)
Preliminary
27 Sept 11
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
RF FUNCTIONAL TESTS (
V
DD
= 60V, I
DQ
= 250mA,
300us pulse / 10% duty, 3.1 - 3.5 GHz)
Output Power
Power Gain
Drain Efficiency
Load Mismatch Stability
Load Mismatch Tolerance
Pin = 14W Peak, 1.4W Ave
Pout = 180W Peak, 18W Ave
Pin = 14W Peak, 1.4W Ave
Pin = 14W Peak, 1.4W Ave
Pin = 14W Peak, 1.4W Ave
P
OUT
G
P
η
D
VSWR-S
VSWR-T
180
10.5
38
5:1
10:1
194
11.4
41
-
-
-
-
-
W Peak
dB
%
-
-
Test Fixture Impedance
Zif
F (MHz)
Z
IF
(Ω)
Z
OF
(Ω)
3100
3300
3500
3.0 - j5.5
2.9 - j5.0
2.4 - j4.8
2.5 - j3.0
2.3 - j3.1
1.4 - j2.8
INPUT
NETWORK
Zof
OUTPUT
NETWORK
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Preliminary
27 Sept 11
Peak Output Power vs. Input Power
60V, Idq=0.25A, 300us/10%
250.0
200.0
Pout(Wpk)
150.0
3.1GHz
100.0
50.0
3.3GHz
3.5GHz
0.0
2.0
6.0
10.0
Pin(Wpk)
14.0
18.0
Efficiency vs. Peak Output Power
60V, Idq=0.25A, 300us/10%
60.0
50.0
Efficiency(%)
40.0
30.0
20.0
10.0
3.1GHz
3.3GHz
3.5GHz
0.0
50.0
100.0
150.0
Pout(Wpk)
200.0
250.0
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Preliminary
27 Sept 11
60V, Idq=0.25A, 300us/10%
16.0
Gain vs. Frequency
Gain (dB)
14.0
12.0
10.0
8.0
3
3.1
3.2
3.3
3.4
3.5
3.6
Freq (GHz)
Return Loss vs. Frequency
60V, Idq=0.25A, 300us/10%
0.0
-5.0
RL (dB)
-10.0
-15.0
-20.0
-25.0
3
3.1
3.2
3.3
Freq (GHz)
3.4
3.5
3.6
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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