MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Features
GaN depletion mode HEMT microwave transistor
Common source configuration
Broadband Class AB operation
Thermally enhanced Cu/Mo/Cu package
RoHS Compliant
+50V Typical Operation
MTTF of 600 years
(Channel Temperature < 200°C)
Production V1
26 March 12
Application
Civilian and Military Pulsed Radar
Product Description
The MAGX-002735-040L00 is a gold metalized matched Gallium
Nitride (GaN) on Silicon Carbide RF power transistor optimized for
civilian and military radar pulsed applications between 2700 - 3500
MHz. Using state of the art wafer fabrication processes, these high
performance transistors provide high gain, efficiency, bandwidth,
ruggedness over a wide bandwidth for today’s demanding
application needs. The MAGX-002735-040L00 is constructed using
a thermally enhanced Cu/Mo/Cu flanged ceramic package which
provides excellent thermal performance. High breakdown voltages
allow for reliable and stable operation in extreme mismatched load
conditions unparalleled with older semiconductor technologies.
Typical RF Performance
Freq
(MHz)
2700
2800
2900
3000
3100
3200
3300
3400
3500
Pin
(W
Peak)
Pout
(W
Peak)
Gain
(dB)
10.4
10.5
10.5
10.3
10.6
10.7
10.7
10.3
10.2
Id-Pk
(A)
1.7
1.7
1.6
1.7
1.7
1.7
1.7
1.5
1.5
Eff
(%)
53
53
56
51
54
54
57
55
55
4
4
4
4
4
4
4
4
4
44
45
44
43
46
47
47
43
42
Ordering Information
MAGX-002735-040L00
MAGX-002735-SB0PPR
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
Typical RF performance measured in M/A-COM RF test fixture.
Devices tested in common source Class-AB configuration as
follows: Vdd=50V, Idq=250mA (pulsed), F=2.7—3.5 GHz,
Pulse=300us, Duty=10%.
40W GaN Power Transistor
Evaluation Fixture
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (Vdd)
Supply Voltage (Vgg)
Supply Current (Id1)
Input Power (Pin)
Absolute Max. Junction/Channel Temp
Continuous Power Dissipation (Pdiss) at 85 ºC
Pulsed Power Dissipation (Pavg) at 85 ºC
MTTF (T
J
<200°C)
Thermal Resistance, (Tchannel = 200 ºC)
Pulsed 500uS, 10% Duty cycle
Operating Temp
Storage Temp
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
+65V
-8 to 0V
3A
+36 dBm
200 ºC
27 W
55 W
600 years
2.0 ºC/W
-40 to +95C
-65 to +150C
See solder reflow profile
50 V
>250 V
MSL1
Production V1
26 March 12
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Test Conditions
Symbol
Min
Typ
Max
Units
V
GS
= -8V, V
DS
= 175V
V
DS
= 5V, I
D
= 6mA
V
DS
= 5V, I
D
= 1.5mA
I
DS
V
GS (th)
G
M
-
-5
1.0
-
-3
-
2.5
-2
-
mA
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 0v, V
GS
= -8V, F = 1MHz
V
DS
= 50V, V
GS
= -8V, F = 1MHz
V
DS
= 50V, V
GS
= -8V, F = 1MHz
C
ISS
C
OSS
C
RSS
-
-
-
13.2
5.6
0.5
-
-
-
pF
pF
pF
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Electrical Specifications: T
C
= 25 ± 5°C (
Room Ambient
)
Parameter
Output Power
Production V1
26 March 12
Test Conditions
Pin = 4W Peak
Symbol Min
P
OUT
36
3.6
9.5
48
5:1
10:1
Typ
44
4.4
10.5
55
-
-
Max
-
Units
W Peak
W Ave
dB
%
-
-
Power Gain
Drain Efficiency
Load Mismatch Stability
Load Mismatch Tolerance
Pin = 4W Peak
Pin = 4W Peak
Pin = 4W Peak
Pin = 4W Peak
G
P
η
D
VSWR-S
VSWR-T
-
-
-
-
Test Fixture Impedance
F (MHz)
2700
2800
2900
3000
3100
3200
3300
3400
3500
Z
IF
(Ω)
9.2+ j2.1
9.0 + j1.5
8.7 + j0.8
8.3 + j0.1
7.8 - j0.7
7.0 - j1.5
6.0 - j2.0
4.9 - j2.1
4.2 - j2.7
Z
OF
(Ω)
7.5 + j8.9
7.9 + j8.9
8.2 + j8.5
8.3 + j8.3
8.2 + j8.4
9.1 + j8.3
9.4 + j7.2
9.4 + j7.2
9.0 + j6.8
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Production V1
26 March 12
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Production V1
26 March 12
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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