MAGX-002731-180L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
Features
GaN depletion mode HEMT microwave transistor
Common source configuration
Broadband Class AB operation
Thermally enhanced Cu/Mo/Cu package
RoHS Compliant
+50V Typical Operation
Production V2
26 Oct 12
MTTF of 114 years
(Channel Temperature < 200°C)
EAR99 Export Classification
Application
Civilian and Military Pulsed Radar
Product Description
The MAGX-002731-180L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon
Carbide RF power transistor optimized for civilian
and military radar pulsed applications between
2700 - 3100 MHz. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency,
bandwidth, ruggedness over a wide bandwidth
for today’s demanding application needs. The
MAGX-002731-180L00 is constructed using a
thermally enhanced Cu/Mo/Cu flanged ceramic
package which provides excellent thermal
performance. High breakdown voltages allow for
reliable and stable operation in extreme
mismatched load conditions unparalleled with
older semiconductor technologies.
Typical Peak RF Performance
50V, 300us, 10%
Freq Pin Pout Gain Flat
(MHz) (Wpk) (Wpk) (dB) (dB)
2700
2800
2900
3000
3100
14
14
14
14
14
193.6
208.0
199.3
199.3
185.8
11.4 - -
11.7 - -
11.5 - -
11.5 - -
11.2 0.52
Eff
(%)
48.9
48.6
45.8
47.7
47.5
Droop
(dB)
0.45
0.43
0.44
0.45
0.41
50V, 500us, 10%
Freq
Pin Pout Gain Flat
(MHz) (Wpk) (Wpk) (dB) (dB)
2700
2800
2900
3000
3100
14
14
14
14
14
198.2
213.1
203.2
201.2
183.2
11.5 - -
11.8 - -
11.6 - -
11.6 - -
11.2 0.65
Eff
(%)
50.4
49.9
46.8
48.8
48.3
Droop
(dB)
0.58
0.55
0.58
0.53
0.53
Ordering Information
MAGX-002731-180L00
MAGX-002731-SB3PPR
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
Typical RF performance measured in M/A-COM RF test fixture.
Devices tested in common source Class-AB configuration as
follows: Vdd=50V, Idq=500mA (pulsed gate bias), F=2.7- 3.1
GHz, Pulse Width=300ms, Duty=10%.
180W GaN Power Transistor
Evaluation Fixture
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002731-180L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (Vdd)
Supply Voltage (Vgg)
Supply Current (Id1)
Input Power (Pin)
Absolute Max. Junction/Channel Temp
Pulsed Power Dissipation (Pavg) at 85 ºC
Thermal Resistance, (Tchannel = 200 ºC)
Pulsed 500uS, 10% Duty cycle
Operating Temp
Storage Temp
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
+65V
-8 to 0V
10A
+36 dBm
200 ºC
192 W
0.6 ºC/W
-40 to +95C
-65 to +150C
See solder reflow profile
50 V
>250 V
MSL1
Production V2
26 Oct 12
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Test Conditions
Symbol
Min
Typ
Max
Units
V
GS
= -8V, V
DS
= 175V
V
DS
= 5V, I
D
= 30mA
V
DS
= 5V, I
D
= 3.5mA
I
DS
V
GS (th)
G
M
-
-5
5.0
-
-3
-
12
-2
-
mA
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Not applicable - Input internally matched
V
DS
= 50V, V
GS
= -8V, F = 1MHz
V
DS
= 50V, V
GS
= -8V, F = 1MHz
C
GS
C
OSS
C
RSS
N/A
-
-
N/A
26.1
2.3
N/A
30.3
4.7
pF
pF
pF
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002731-180L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
Electrical Specifications: T
C
= 25 ± 5°C (
Room Ambient
)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Production V2
26 Oct 12
RF FUNCTIONAL TESTS
Vdd=50V, Idq=500mA (pulsed gate bias), F=2.7- 3.1 GHz, Pulse Width=300ms, Duty=10%.
Output Power
Power Gain
Drain Efficiency
Load Mismatch Stability
Load Mismatch Tolerance
Pin = 14W Peak, 1.4W Ave
Pout = 180W Peak, 18W Ave
Pin = 14W Peak, 1.4W Ave
Pin = 14W Peak, 1.4W Ave
Pin = 14W Peak, 1.4W Ave
P
OUT
G
P
η
D
VSWR-S
VSWR-T
180
18
10.5
43
5:1
10:1
190
19
11.5
50
-
-
-
-
-
W Peak
W Ave
dB
%
-
-
Test Fixture Impedance
Zif
Freq
2.7
2.8
2.9
3.0
3.1
Zif
2.04 - j 5.75
1.61 - j 5.40
1.28 - j 4.98
1.13 - j 4.51
1.19 - j 4.18
Zof
2.82 - j 2.00
3.08 - j 2.73
2.88 - j 3.30
2.49 - j 3.49
2.21 - j 3.64
INPUT
NETWORK
Zof
OUTPUT
NETWORK
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002731-180L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
RF Power Transfer Curve
Peak Output Power vs. Input Power
Production V2
26 Oct 12
RF Power Transfer Curve
Power Gain vs. Peak Output Power
Input VSWR & Droop (Typ)
Return Loss & Droop
0
-2
-4
0.70
0.60
0.50
Input RL
Droop @ 500us
Droop @ 300us
0.40
0.30
0.20
0.10
0.00
3100
Input RL (dB)
-6
-8
-10
-12
-14
2700
2800
2900
Freq (MHz)
3000
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
Droop (dB)
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002731-180L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
Test Fixture Circuit Dimensions (inches)
Production V2
26 Oct 12
.373"
.341"
.067"
.190"
.098"
.256"
.070"
.085"
.070"
.090"
.050"
.108"
.148"
.028"
.104"
.250"
.042"
.026"
.026"
.120"
.522"
.462"
.026"
.420"
.353"
.420"
.085"
.024"
.148"
.182"
Test Fixture Assembly
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
.108"
.070"
.090"
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
.064"
.110"
.190" .027 .027"
.026"
.110"
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