MAGX-002731-100L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
Features
GaN depletion mode HEMT microwave transistor
Common source configuration
Broadband Class AB operation
Thermally enhanced Cu/Mo/Cu package
RoHS Compliant
+50V Typical Operation
MTTF of 114 years
(Channel Temperature < 200°C)
Production V1
23 Aug 11
Application
Civilian and Military Pulsed Radar
Product Description
The MAGX-002731-100L00 is a gold metalized matched
Gallium Nitride (GaN) on Silicon Carbide RF power transistor
optimized for civilian and military radar pulsed applications
between 2700 - 3100 MHz. Using state of the art wafer
fabrication processes, these high performance transistors
provide high gain, efficiency, bandwidth, ruggedness over a
wide bandwidth for today’s demanding application needs. The
MAGX-002731-100L00 is constructed using a thermally
enhanced Cu/Mo/Cu flanged ceramic package which provides
excellent thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme mismatched load
conditions unparalleled with older semiconductor technologies.
Typical RF Performance
Freq.
(MHz)
2700
2900
3100
Pin
(W
Pout
(W Peak)
Gain
(dB)
12
12
12
Id-Pk
(A)
4.2
4.4
4.2
Eff
(%)
51
51
52
7
7
7
109
112
109
Typical RF performance measured in M/A-COM RF test fixture.
Devices tested in common source Class-AB configuration as fol-
lows: Vdd=50V, Idq=500mA (pulsed), F=2.7—3.1 GHz,
Pulse=500us, Duty=10%.
Ordering Information
MAGX-002731-100L00
MAGX-002731-SB2PPR
100W GaN Power Transistor
Evaluation Fixture
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002731-100L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (Vdd)
Supply Voltage (Vgg)
Supply Current (Id1)
Input Power (Pin)
Absolute Max. Junction/Channel Temp
Pulsed Power Dissipation (Pavg) at 85 ºC
Thermal Resistance, (Tchannel = 200 ºC)
Production V1
23 Aug 11
+65V
-8 to 0V
7100 mA Pk
+34 dBm
200 ºC
128W
0.9 ºC/W
-40 to +95C
-65 to +150C
See solder reflow profile
50 V
>250 V
MSL1
V
DD
= 50V, I
DQ
= 500mA, Pout = 100W Peak
(300us Pulse / 10% Duty)
Operating Temp
Storage Temp
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Test Conditions
Symbol
Min
Typ
Max
Units
V
GS
= -8V, V
DS
= 175V
V
DS
= 5V, I
D
= 15.0mA
V
DS
= 5V, I
D
= 3.5mA
I
DS
V
GS (th)
G
M
-
-5
2.5
-
-3
-
6
-2
-
mA
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Feedback Capacitance
Not applicable—Input internally matched
V
DS
= 50V, V
GS
= -8V, F = 1MHz
V
DS
= 50V, V
GS
= -8V, F = 1MHz
C
GS
C
DS
C
GD
N/A
-
-
N/A
30.3
2.8
N/A
35.4
5.4
pF
pF
pF
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002731-100L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
Electrical Specifications: T
C
= 25 ± 5°C (
Room Ambient
)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Production V1
23 Aug 11
RF FUNCTIONAL TESTS
Vdd=50V, Idq=500mA (pulsed), F=2.7—3.1 GHz, Pulse=500us, Duty=10%
Output Power
Power Gain
Drain Efficiency
Load Mismatch Stability
Load Mismatch Tolerance
Pin = 7W Peak
Pout = 100W Peak, 10W Ave
Pin = 7W Peak
Pin = 7W Peak
Pin = 7W Peak
P
OUT
G
P
η
D
VSWR-S
VSWR-T
100
10
11.6
47
5:1
10:1
105
10.5
12.6
53
-
-
-
-
-
-
-
W Peak
W Ave
dB
%
-
-
Test Fixture Impedance
F (MHz)
2700
2900
3100
Z
IF
(Ω)
3.5 - j7.5
2.7 - j5.3
2.0 - j4.1
Z
OF
(Ω)
3.4 + j0.4
4.7 - j0.8
2.5 - j1.7
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002731-100L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
RF Power Transfer Curve at 50V Drain Bias, Idq=0.5A
Output Power vs. Input Power
Production V1
23 Aug 11
Gain vs. Frequency
50V Drain Bias, Idq=0.5A
Return Loss vs. Frequency
50V Drain Bias, Idq=0.5A
14
13.5
13
12.5
12
11.5
11
10.5
10
2600
2800
3000
Frequency (MHz)
3200
16
14
12
10
8
6
4
2
0
2600
2700
2800
2900
3000
3100
3200
Frequency (MHz)
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
Gain (dB)
RL(dB)
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002731-100L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
RF Power Transfer Curve at 65V Drain Bias, Idq=0.5A
Output Power vs. Input Power
Production V1
23 Aug 11
Gain vs. Frequency
65V Drain Bias, Idq=0.5A
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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