TQP7M9101
Applications
Repeaters
Mobile Infrastructure
CDMA / WCDMA / LTE
General Purpose Wireless
¼W High Linearity Amplifier
3-pin SOT-89 Package
Product Features
400-4000 MHz
+25 dBm P1dB
+39.5 dBm Output IP3
17.5 dB Gain @ 2140 MHz
+5V Single Supply, 87 mA Current
No output matching required
Internal RF overdrive protection
Internal DC overvoltage protection
On chip ESD protection
SOT-89 Package
Functional Block Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
General Description
The TQP7M9101 is a high-linearity driver amplifier in a
standard SOT-89 surface mount package. This
InGaP/GaAs HBT delivers high performance across a
broad range of frequencies with +40 dBm OIP3 and +25
dBm P1dB while only consuming 87 mA quiescent
current. All devices are 100% RF and DC tested.
The TQP7M9101 incorporates on-chip features that
differentiate it from other products in the market. The RF
output is internally matched in to 50 ohms. Only input
matching is required for optimal performance in specific
frequency bands making the component easy for design
engineers to implement in their systems. The amplifier
integrates an on-chip DC over-voltage and RF over-drive
protection. This protects the amplifier from electrical DC
voltage surges and high input RF input power levels that
may occur in a system. On-chip ESD protection allows
the amplifier to have a very robust Class 2 HBM ESD
rating.
The TQP7M9101 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device an
excellent candidate for transceiver line cards in current
and next generation multi-carrier 3G / 4G base stations.
Pin Configuration
Pin #
1
3
2, 4
Symbol
RF Input
RF Output / Vcc
Ground
Ordering Information
Part No.
TQP7M9101
TQP7M9101-PCB900
TQP7M9101-PCB2140
Description
0.25 W High Linearity Amplifier
TQP7M9101 869-960 MHz EVB
TQP7M9101 2.11-2.17 GHz EVB
Standard T/R size = 1000 pieces on a 7” reel.
Advanced Data Sheet: Rev D 09/19/11
© 2011 TriQuint Semiconductor, Inc.
-
1 of 1
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9101
Specifications
¼W High Linearity Amplifier
Absolute Maximum Ratings
Parameter
Storage Temperature
Device Voltage,V
cc
Maximum Input Power
Recommended Operating Conditions
Parameter
°
Rating
-65 to +150 C
+8 V
+23 dBm
Min
+3
-40
Typ Max Units
+5
+5.25
85
160
V
C
°
C
°
V
cc
T
case
Tj (for>10
6
hours MTTF
)
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: +25°C, +5V Vsupply, in a tuned application circuit
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
WCDMA Pout @ -55 dBc ACLR
Noise Figure
Vcc
Quiescent Current, Icq
Thermal Resistance (jnc to case)
θ
jc
Conditions
Min
400
Typical
2140
17.5
15
13.5
+25
+39.5
+14.5
3.9
5
87
Max
4000
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
°
C/W
See Note 1.
71
Notes
1. OIP3 measured with two tones at an output power of +8 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
Advanced Data Sheet: Rev D 09/19/11
© 2011 TriQuint Semiconductor, Inc.
-
2 of 2
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9101
¼W High Linearity Amplifier
Device Characterization Data
Gain vs Frequency
40
30
Maximum Stable Gain (GMAX)
Input Smith Chart
1
0.8
0.6
0.4
Output Smith Chart
4 GHz
4 GHz
Gain (dB)
20
10
Insertion Gain (S21)
0.2
0
-0.2
-1 -0.75
-0.5-0.25 0 0.25 0.5 0.75 1
0.4 GHz
0
‐10
0
1
2
Frequency (GHz)
3
4
0.4 GHz
-0.4
-0.6
-0.8
-1
Note: The gain for the unmatched device in a 50 ohm system is shown as the trace labeled “Insertion Gain (S21)”. In a circuit tuned
for a particular frequency band, it is expected that actual gain will be higher, up to the Maximum Stable Gain (GMAX).
S-Parameter Data
V
cc
= +5 V, I
cc
= 87 mA, T = +25°C, unmatched 50 Ohm system, reference plane at device leads
Freq
(MHz)
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
S11 (dB)
-3.74
-2.43
-2.00
-1.81
-1.71
-1.68
-1.66
-1.65
-1.56
-1.60
-1.43
-1.41
-1.43
-1.45
-1.36
-1.40
-1.32
-1.19
-1.11
S11 (ang)
-154.94
-174.00
175.84
167.43
160.50
155.82
149.16
143.36
137.28
131.41
126.29
122.01
117.57
114.12
109.38
103.72
98.51
93.06
89.37
S21 (dB)
16.08
16.93
16.72
16.29
15.71
15.15
14.58
13.98
13.45
12.80
12.14
11.52
10.99
10.53
10.15
9.69
8.99
8.49
8.02
S21 (ang)
172.65
152.42
137.72
123.90
112.48
102.29
91.96
82.32
72.43
64.37
56.45
48.81
41.39
34.73
27.42
19.90
12.40
5.24
-0.57
S12 (dB)
-30.84
-28.85
-28.64
-28.38
-28.45
-28.29
-28.34
-28.40
-28.25
-28.52
-28.43
-28.73
-28.68
-28.78
-28.85
-29.00
-29.04
-29.04
-29.02
S12 (ang)
32.65
13.25
3.42
-4.74
-10.23
-15.72
-19.66
-25.64
-30.76
-35.06
-39.47
-42.87
-47.17
-49.96
-52.90
-59.40
-63.10
-68.03
-70.86
S22 (dB)
-4.47
-6.02
-6.63
-7.05
-7.29
-7.67
-7.92
-8.05
-8.05
-7.96
-7.47
-7.49
-7.71
-7.92
-7.87
-7.85
-7.32
-6.75
-6.53
S22 (ang)
155.03
149.89
147.55
144.48
142.81
139.67
136.04
132.86
129.68
125.67
122.90
122.21
119.34
116.57
114.37
106.77
100.14
96.77
95.94
Advanced Data Sheet: Rev D 09/19/11
© 2011 TriQuint Semiconductor, Inc.
-
3 of 3
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9101
¼W High Linearity Amplifier
Application Circuit 869-960 MHz
1071363AW REV - 1071363PC REV -
+V
CC
GND
SOT89 EVAL. BRD., 1/2 WATT
Notes:
1. See PC Board Layout, page 8 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0
Ω
resistors (C2,R1,R4) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
Distance from U1 Pin 1 (left edge) to C5 (right edge): 410 mils (19.0 deg. at 900 MHz)
Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (5.3 deg. at 900 MHz)
Distance from U1 Pin 3 (right edge) to R2 (left edge): 270 mils (12.5 deg. at 900 MHz)
Bill of Material
Ref Des
n/a
J1, J2
U1
R1, C2, R4
L1
C1
R2, C3
C4
C5
J3, J4
Value
n/a
n/a
n/a
0
Ω
33 nH
5.6 pF
100 pF
1.0 uF
3.9 pF
n/a
Description
Printed Circuit Board
RF SMA Connector
Amplifier, SOT-89 pkg.
Resistor, Chip, 0603, 5%, 1/16W
Inductor, 0805, 5%, Coilcraft CS Series
Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG
Cap., Chip, 5%, 50V, NPO/COG
Cap., Chip, 10%, 10V, X5R
Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG
Solder Turret
Manuf.
TriQuint
Johnson Comp.
TriQuint
various
Coilcraft
AVX
various
various
AVX
various
Part Number
1071363
142-0701-851
TQP7M9101
0805CS-330XJLB
06032U5R6BAT2A
06032U3R9BAT2A
Advanced Data Sheet: Rev D 09/19/11
© 2011 TriQuint Semiconductor, Inc.
-
4 of 4
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQP7M9101
¼W High Linearity Amplifier
Typical Performance 869-960 MHz
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (+8 dBm/tone,
∆f
= 1 MHz)
WCDMA Channel Power (at -55 dBc ACLR) [1]
Noise Figure
Supply Voltage, Vcc
Quiescent Collector Current, Icq
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
869
20.2
12
18
+24.3
+39.2
+12.7
4.0
920
20.4
17
23
+24.4
+38.6
+13.4
4.0
+5
87
960
20.1
14
17
+24.4
+38.2
+13.5
3.9
Notes:
1.
ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots 869-960 MHz
23
22
Gain (dB)
Gain vs. Frequency
−40
°
C
+25
°
C
+85
°
C
0
-5
Return Loss (dB)
Input Return Loss vs. Frequency
−40
°
C
+25
°
C
+85
°
C
0
-5
Return Loss (dB)
Output Return Loss vs. Frequency
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
21
20
19
18
860
880
900
920
940
960
−40
°
C
+25
°
C
+85
°
C
860
880
900
920
940
960
860
880
900
920
940
960
Freq (MHz)
-35
-40
-45
-50
-55
-60
-65
11
12
13
14
15
16
17
Axis Title
44
42
OIP3 (dBm)
Axis Title
27
26
P1dB (dBm)
ACLR Vs. Output Power
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
Freq.=920 MHz
OIP3 Vs. Pout/Tone
Freq.=920 MHz
1 MHz Tone Spacing
P1dB vs. Frequency
−40
°
C
+25
°
C
+85
°
C
ACLR (dBc)
40
38
36
34
6
8
+85
°
C
+25
°
C
−40
°
C
25
24
23
22
+85
°
C
+25
°
C
−40
°
C
10
12
14
16
860
880
900
920
940
960
Pout (dBm)
-35
-40
-45
-50
-55
-60
-65
11
12
13
14
15
16
17
Pout/Tone (dBm)
44
42
OIP3 (dBm)
Frequency (MHz)
26
24
Pout (dBm)
ACLR Vs. Output Power
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
Temp.=+25
°
C
OIP3 Vs. Pout/Tone
1 MHz Tone Spacing
Temp.=+25
°
C
Output Power vs. Input Power
Freq.= 920 MHz
ACLR (dBc)
960 MHz
920 MHz
869 MHz
40
38
36
34
6
8
10
960 MHz
920 MHz
869 MHz
22
20
18
16
−40
°
C
+25
°
C
+85
°
C
12
14
16
-3
-1
1
3
5
7
Pout (dBm)
Pout/Tone (dBm)
Pin (dBm)
Advanced Data Sheet: Rev D 09/19/11
© 2011 TriQuint Semiconductor, Inc.
-
5 of 5
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
