Silicon Controlled Rectifier, 750A I(T)RMS, 380000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element,
参数名称 | 属性值 |
厂商名称 | EUPEC [eupec GmbH] |
Reach Compliance Code | unknown |
标称电路换相断开时间 | 280 µs |
配置 | SINGLE |
关态电压最小值的临界上升速率 | 500 V/us |
最大直流栅极触发电流 | 250 mA |
最大直流栅极触发电压 | 1.5 V |
最大维持电流 | 300 mA |
JESD-30 代码 | O-CEDB-N2 |
最大漏电流 | 250 mA |
通态非重复峰值电流 | 6500 A |
元件数量 | 1 |
端子数量 | 2 |
最大通态电流 | 380000 A |
最高工作温度 | 125 °C |
最低工作温度 | -40 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | ROUND |
封装形式 | DISK BUTTON |
认证状态 | Not Qualified |
最大均方根通态电流 | 750 A |
断态重复峰值电压 | 3200 V |
重复峰值反向电压 | 3200 V |
表面贴装 | YES |
端子形式 | NO LEAD |
端子位置 | END |
触发设备类型 | SCR |
T380N32TOC | T380N32TOF | T380N34TOF | T380N36TOF | T380N38TOC | T380N34TOC | T380N36TOC | |
---|---|---|---|---|---|---|---|
描述 | Silicon Controlled Rectifier, 750A I(T)RMS, 380000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element, | Silicon Controlled Rectifier, 750A I(T)RMS, 380000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element, | Silicon Controlled Rectifier, 750A I(T)RMS, 380000mA I(T), 3400V V(DRM), 3400V V(RRM), 1 Element, | Silicon Controlled Rectifier, 750A I(T)RMS, 380000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element, | Silicon Controlled Rectifier, 750A I(T)RMS, 380000mA I(T), 3800V V(DRM), 3800V V(RRM), 1 Element, | Silicon Controlled Rectifier, 750A I(T)RMS, 380000mA I(T), 3400V V(DRM), 3400V V(RRM), 1 Element, | Silicon Controlled Rectifier, 750A I(T)RMS, 380000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element, |
厂商名称 | EUPEC [eupec GmbH] | EUPEC [eupec GmbH] | EUPEC [eupec GmbH] | EUPEC [eupec GmbH] | EUPEC [eupec GmbH] | EUPEC [eupec GmbH] | EUPEC [eupec GmbH] |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
标称电路换相断开时间 | 280 µs | 280 µs | 280 µs | 280 µs | 280 µs | 280 µs | 280 µs |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
关态电压最小值的临界上升速率 | 500 V/us | 1000 V/us | 1000 V/us | 1000 V/us | 500 V/us | 500 V/us | 500 V/us |
最大直流栅极触发电流 | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA |
最大直流栅极触发电压 | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
最大维持电流 | 300 mA | 300 mA | 300 mA | 300 mA | 300 mA | 300 mA | 300 mA |
JESD-30 代码 | O-CEDB-N2 | O-CXDB-X4 | O-CXDB-X4 | O-CXDB-X4 | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 |
最大漏电流 | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA |
通态非重复峰值电流 | 6500 A | 6500 A | 6500 A | 6500 A | 6500 A | 6500 A | 6500 A |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 4 | 4 | 4 | 2 | 2 | 2 |
最大通态电流 | 380000 A | 380000 A | 380000 A | 380000 A | 380000 A | 380000 A | 380000 A |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大均方根通态电流 | 750 A | 750 A | 750 A | 750 A | 750 A | 750 A | 750 A |
断态重复峰值电压 | 3200 V | 3200 V | 3400 V | 3600 V | 3800 V | 3400 V | 3600 V |
重复峰值反向电压 | 3200 V | 3200 V | 3400 V | 3600 V | 3800 V | 3400 V | 3600 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES |
端子形式 | NO LEAD | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | NO LEAD | NO LEAD | NO LEAD |
端子位置 | END | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | END | END | END |
触发设备类型 | SCR | SCR | SCR | SCR | SCR | SCR | SCR |
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