2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Rev. V5
Features
•
Available in commercial, JAN, JANTX, JANTXV, JANS and
JANSR 100K rads (Si) per MIL-PRF-19500/545
•
TO-5 Package: 2N5151L, 2N5153L
•
TO-39 (TO-205AD) Package: 2N5151, 2N5153
Electrical Characteristics (T
A
= 25
o
C unless otherwise noted)
Parameter
Collector
-
Emitter Breakdown Voltage
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
Collector
-
Emitter Cutoff Current
Test Conditions
I
C
=
-100
mA dc, I
B
= 0
V
EB
=
-4.0
V dc, I
C
= 0
V
EB
=
-5.5
V dc, I
C
= 0
V
CE
=
-60
V dc, V
BE
= 0
V
CE
=
-100
V dc, V
BE
= 0
V
CE
=
-40
V dc, I
B
= 0
V
CE
=
-5.0
V dc, I
C
=
-50
mA dc
2N5151, L
2N5153, L
V
CE
=
-5.0
V dc, I
C
=
-2.5
A dc
2N5151, L
2N5153, L
V
CE
=
-5.0
V dc, I
C
=
-5.0
A dc
2N5151, L
2N5153, L
I
C
=
-2.5
A dc, I
B
=
-250
mA dc
I
C
=
-5.0
A dc, I
B
=
-500
mA dc
V
CE
=
-5.0
Vdc, I
C
=
-2.5
A dc
I
C
=
-2.5
A dc, I
B
=
-250
mA dc
I
C
=
-5.0
A dc, I
B
=
-500
mA dc
T
C
= +150
o
C
V
CE
=
-60
V dc, V
BE
= +2 V dc
T
C
=
-55
o
C
V
CE
=
-5
V dc, I
C
=
-2.5
A dc
2N5151, L
2N5153, L
Symbol Units
V
(BR)CEO
V dc
I
EBO1
I
EBO2
I
CES1
I
CES2
I
CEO
µA dc
mA dc
µA dc
mA dc
µA dc
Min.
-80
—
—
—
Max.
—
-1.0
-1.0
-1.0
-1.0
-50
20
50
h
FE
-
30
70
20
40
V
CE(sat)1
V dc
V
CE(sat)2
V
BE
V dc
—
—
—
-0.75
-1.50
-1.45
-1.45
-2.20
-25
90
200
Forward Current Transfer Ratio
Collector
-
Emitter Saturation Voltage
Emitter
-
Base Voltage Non-Saturation
Emitter
-
Base Saturation Voltage
V
BE(sat)1
V dc
V
BE(sat)1
I
CEX
µA dc
Collector—Emitter Cutoff Current
—
Forward
-
Current Transfer Ratio
h
FE4
15
25
1
(Continued next page)
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Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
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2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Rev. V5
Electrical Characteristics (T
A
= 25
o
C unless otherwise noted)
Parameter
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal
Short-Circuit, Forward-Current Transfer Ratio
V
CE
=
-5.0
V dc, I
C
=
-500
mA dc,
f = 10 MHz
2N5151
2N5153
I
C
=
-100
mA dc, V
CE
=
-5.0
V dc, f = 1 kHz
2N5151
2N5153
V
CB
=
-10
V dc, I
E
= 0, f = 1 MHz
Test Conditions
| h
fe
|
-
Test Conditions
Symbol Units
Min.
Max.
6
7
20
50
—
Min.
—
Common-Emitter, Small-Signal Short-Circuit,
Forward-Current Transfer Ratio
Open-Circuit Output Capacitance
Parameter
Switching Characteristics
Turn-On Time
Turn-Off Time
Storage Time
Fall Time
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
h
fe
-
C
obo
pF
250
Max.
Symbol Units
t
on
I
C
=
-5
A dc; I
B1
=
-500
mA dc, R
L
= 6
Ω,
I
B2
=
-500
mA dc, V
BE(off)
=
-3.7
V dc
t
off
t
s
t
f
µs
µs
µs
µs
—
—
—
—
0.5
1.5
1.4
0.5
T
C
= +25°C, I Cycle, t
p
= 1 s
V
CE
=
-5
V dc, I
C
=
-2
A dc
V
CE
=
-32
V dc, I
C
=
-310
mA dc
V
CE
=
-80
V dc, I
C
=
-12.5
mA dc
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Rev. V5
Absolute Maximum Ratings (T
A
= 25
o
C unless otherwise noted)
Ratings
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current
Reverse Pulse Energy
(4)
Total Power Dissipation
(1)
@ T
A
= +25°C
@ T
C
= +25°C
Operating & Storage Temperature Range
P
T
T
J
, T
STG
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-80
V dc
-100
V dc
-5.5
V dc
-2
A dc
-10
A dc
(3)
15 mj
1W
10 W
-65°C
to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
(2)
R
θJA
(2)
Max. Value
10°C/W
175°C/W
(1)
(2)
(3)
(4)
See figures 6, 7, 8 and 9 of MIL-PRF-19500/545 for temperature-power derating curves.
See figures 10, 11 and 12 of MIL-PRF-19500/545 for transient thermal impedance graph.
This value applies for P
W
< 8.3 ms, duty cycle < 1 percent.
This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit, see
subgroup 5 of the group A inspection table and figure 13 of MIL-PRF-19500/545.
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Rev. V5
Outline Drawings (TO-5, TO-39)
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Rev. V5
VPT COMPONENTS. ALL RIGHTS RESERVED.
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Components as a service to its customers and may be used for informational purposes only. Except as provided in VPT
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incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by
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customers using or selling VPT Components products for use in such applications do so at their own risk and agree to fully
indemnify VPT Components for any damages resulting from such improper use or sale.
5
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Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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