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GBJ1006

产品描述3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小161KB,共2页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
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GBJ1006概述

3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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GBJ10005-GBJ1010
10A Glass Passivated Bridge Rectifier
Features
·
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500V
RMS
Low Reverse Leakage Current
Surge Overload Rating to 170A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component
Index, File Number E94661
GBJ
Dim
A
B
L
K
A
B
M
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
4.40
3.40
3.10
2.50
0.60
10.80
Max
30.30
20.30
18.00
4.20
7.70
10.20
2.40
1.10
2.70
4.80
3.80
3.40
2.90
0.80
11.20
C
D
E
G
Mechanical Data
·
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx.)
Marking: Type Number
_
J
H
I
S
P
C
R
N
H
I
J
K
L
M
N
P
R
S
D
3.0 X 45°
G
E
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
@ T
C
= 110°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element
Peak Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes:
@ I
F
= 5.0A
@T
C
= 25°C
@ T
C
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
R
I
2
t
C
j
R
qJC
T
j
, T
STG
GBJ
10005
50
35
@ T
A
= 25°C unless otherwise specified
GBJ
1001
100
70
GBJ
1002
200
140
GBJ
1004
400
280
10
170
1.05
10
500
120
55
1.4
-65 to +150
GBJ
1006
600
420
GBJ
1008
800
560
GBJ
1010
1000
700
Unit
V
V
A
A
V
mA
A
2
s
pF
°C/W
°C
1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
http://www.luguang.cn
mail:lge@luguang.cn

GBJ1006相似产品对比

GBJ1006 GBJ10005 GBJ1001 GBJ1002 GBJ1004 GBJ1008 GBJ1010
描述 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

 
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