Low Profile SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
CDBMT120-HF Thru. CDBMT1150-HF
Reverse Voltage: 20 to 150 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free
Features
-Excellent power dissipation offers better reverse
leakage current and thermal resistance.
-Low profile package is 40% thinner than standards
SOD-123.
-Low power loss,high efficiency.
-High current capability,low forward voltage drop.
-High surge capability.
-Guarding for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
-Lead-free part meets environmental standards of
MIL-STD-19500/228
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOD-123H
0.071(1.8)
0.055(1.4)
0.040(1.0)
0.024(0.6)
Mechanical data
-Epoxy: UL94-V0 rated flame retardant.
-Case: Molded plastic, SOD-123H/MINI SMA
-Terminals: Solderable per MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting Position: any
-Weight: 0.011 grams approx.
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings
(at T
A
=25
Parameter
Repetitive peak reverse voltage
Continuous reverse voltage
RMS voltage
Forward rectified current
Maximum forward voltage
@ I
F
=1.0A
Max. Forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC method)
O
C unless otherwise noted)
Symbol
V
RRM
V
R
V
RMS
I
O
V
F
CDBMT
120-HF
CDBMT
130-HF
CDBMT
140-HF
CDBMT
150-HF
CDBMT
160-HF
CDBMT CDBMT CDBMT
180-HF 1100-HF 1150-HF
Unit
V
V
V
A
20
20
14
30
30
21
40
40
28
50
50
35
1.0
60
60
42
80
80
56
100
100
70
150
150
105
0.50
0.70
0.85
0.92
V
I
FSM
25
0.5
A
V
R
=V
RRM
T
J
=25°C
Max.Reverse current
V
R
=V
RRM
T
J
=100°C
Typ. Thermal resistance
(Junction to ambient)
I
R
10
R
θJA
C
J
T
J
T
STG
-55 to +125
-65 to +175
98
120
-55 to +150
mA
O
C/W
P
F
O
Typ. Diode Junction capacitance (Note 1)
Operating temperature
Storage temperature range
C
C
O
Note : 1. F=1MHz and applied 4V DC reverse voltage
REV: A
QW-JB025
Page 1
Comchip Technology CO., LTD.
Low Profile SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
Rating and Characteristic Curves (CDBMT120-HF Thru. CDBMT1150-HF)
Fig.1- Typical Forward Current
Derating Curve
100
Fig.2 - Typical Forward Characteristics
I
F
,
Instantaneous Forward Current, (A)
I
O
,
Average Forward Current, (A)
1.2
1.0
CD
CD
10
CD
2
T1
BM
0-
4
~1
HF
HF
0-
0.8
0.6
0.4
0.2
0
20
1
0
15
MT
DB
C
-
6
~1
HF
0 -H
F
CD
8
T1
BM
5
11
F~
0-H
0-H
F
0
T15
BM
2
T1
BM
0-H
CD
F~
D
~C
-HF
50
T11
BM
-HF
0-H
F
4
T1
BM
0.1
T
J
=25°C
Pulse Width 300
US
1% Duty Cycle
0.01
40
60
80
100
120
140
160
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
T
A
, Ambient Temperature, (°C)
V
F
, Forward Voltage, (V)
Fig.3 - Maximum Non-repetitive
Forward Surge Current
I
FSM
, Peak Forward Surge Current, (A)
25
350
T
J
=25 C
8.3ms single half sine
wave, JEDEC method
O
Fig.4 - Typical Junction Capacitance
C
J
, Junction Capacitance, (pF)
100
300
250
200
150
100
50
0
0.01
20
15
10
5
0
1
10
0.1
1
10
100
Number of Cycles at 60Hz
V
R
, Reverse Voltage, (V)
Fig.5 - Typical Reverse Characteristics
100
Reverse Leakage Current, (mA)
10
1
T
J
=75
O
C
0.1
T
J
=25 C
O
0.01
0
40
80
120
160
200
Percent of Rated Peak Reverse Voltage, (%)
REV: A
QW-JB025
Page 2
Comchip Technology CO., LTD.
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