SiR846ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L =0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
100
± 20
60
a
58.6
18.6
b, c
14.7
b, c
100
60
a
4.9
b, c
40
80
83
53
5.4
b, c
3.4
b, c
- 55 to 150
260
A
Unit
V
mJ
Maximum Power Dissipation
P
D
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Maximum Junction-to-Case (Drain)
Junction-to-Ambient
b, f
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
18
1
Maximum
23
1.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 63823
S12-0545-Rev. A, 12-Mar-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR846ADP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A
0.75
47
64
26
21
T
C
= 25 °C
60
100
1.1
90
122
A
V
ns
nC
ns
C
iss
C
oss
C
rss
V
DS
= 50 V, V
GS
= 10 V, I
D
= 20 A
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 2.5
I
D
20 A, V
GEN
= 7.5 V, R
g
= 1
V
DD
= 50 V, R
L
= 2.5
I
D
20 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
0.3
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 20 A
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
2350
650
59
44
33
26.7
8.2
9.2
54
1
11
10
28
9
14
10
25
10
82
2
22
20
55
18
28
20
50
20
ns
66
50
40
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 7.5 V, I
D
= 18 A
V
GS
= 6 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
40
0.0065
0.0070
0.0076
63
0.0078
0.0085
0.0095
S
1.8
100
59
-6
3
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 63823
S12-0545-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR846ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 5 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
60
V
GS
= 4 V
40
6
T
C
= 25
°C
4
20
V
GS
= 3 V
0
0.0
1.0
2.0
3.0
4.0
V
DS
- Drain-to-Source Voltage (V)
5.0
2
T
C
= 125
°C
T
C
= - 55
°C
0.0
1.0
2.0
3.0
4.0
V
GS
-
Gate-to-Source
Voltage (V)
5.0
0
Output Characteristics
3100
Transfer Characteristics
0.0090
0.0084
R
DS(on)
- On-Resistance (Ω)
V
GS
= 6 V
0.0078
V
GS
= 7.5 V
0.0072
C - Capacitance (pF)
2480
C
iss
1860
C
oss
1240
0.0066
V
GS
= 10 V
0.0060
0
620
C
rss
0
20
40
60
I
D
- Drain Current (A)
80
100
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
100
On-Resistance vs. Drain Current
10
I
D
= 20 A
8
V
DS
= 50 V
6
V
DS
= 25 V
V
DS
= 75 V
4
R
DS(on)
- On-Resistance (Normalized)
Capacitance
2.0
I
D
= 20 A
1.7
V
GS
= 10 V
V
GS
-
Gate-to-Source
Voltage (V)
1.4
V
GS
= 6 V
1.1
2
0.8
0
0
9
18
27
Q
g
- Total
Gate
Charge (nC)
36
45
0.5
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63823
S12-0545-Rev. A, 12-Mar-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR846ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.03
10
I
S
-
Source
Current (A)
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
0.02
I
D
= 20 A
1
T
J
= 25 °C
0.02
T
J
= 125 °C
0.01
0.1
0.01
0.01
T
J
= 25
°C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
200
0.2
V
GS(th)
Variance (V)
160
I
D
= 5 mA
- 0.4
Power (W)
150
- 0.1
120
80
- 0.7
I
D
= 250 μA
40
- 1.0
- 50
- 25
0
25
50
75
T
J
- Temperature (°C)
100
125
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
I
DM
Limited
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
I
D
Limited
100 μs
1 ms
10 ms
1
Limited by R
DS(on)
*
100 ms
1s
10 s
T
A
= 25 °C
Single
Pulse
BVDSS Limited
DC
0.1
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 63823
S12-0545-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR846ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
64
I
D
- Drain Current (A)
Package Limited
48
32
16
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Current Derating*
100
2.5
80
2.0
Power (W)
40
Power (W)
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
60
1.5
1.0
20
0.5
0
0.0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63823
S12-0545-Rev. A, 12-Mar-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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