• Load Switches, Battery Switches and Charger Switches
in Portable Device Applications
• Load Switch for 1.2 V Power Line
MICRO FOOT
Bump Side
View
Backside
View
S
8
469
S
2
G
1
XXX
G
S
3
D
4
Device Marking:
8469
xxx = Date/Lot Traceability Code
Ordering Information:
Si8469DB-T2-E1 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
A
= 25 °C
T
A
= 25 °C
T
A
= 25 °C
Maximum Power Dissipation
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Package Reflow Conditions
c
VPR
IR/Convection
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
-8
±5
- 4.6
a
- 3.7
a
- 3.6
b
- 2.8
b
- 15
- 1.4
a
- 0.6
b
1.8
a
1.1
a
0.78
b
0.5
b
- 55 to 150
260
260
°C
W
A
Unit
V
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
Document Number: 67091
S10-2539-Rev. A, 08-Nov-10
www.vishay.com
1
Si8469DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient
a, b
c, d
Symbol
t = 10 s
t = 10 s
R
thJA
Typical
55
125
Maximum
70
160
Unit
°C/W
Maximum Junction-to-Ambient
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= - 8 V, V
GS
= 0 V
V
DS
= - 8 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
-
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 1.5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 2.5 V, I
D
= - 1 A
V
GS
= - 1.5 V, I
D
= - 0.3 A
V
GS
= - 1.2 V, I
D
= - 0.3 A
Forward Transconductance
Dynamic
b
a
Symbol
Test Conditions
Min.
-8
Typ.
Max.
Unit
V
- 6.4
2.4
- 0.35
- 0.8
± 100
-1
- 10
- 10
0.052
0.062
0.085
0.110
12
900
0.064
0.076
0.115
0.180
mV/°C
V
nA
µA
A
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
V
DS
= - 4 V, I
D
= - 1.5 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= - 4 V, V
GS
= 0 V, f = 1 MHz
315
260
11
17
pF
V
DS
= - 4 V, V
GS
= - 4.5 V, I
D
= - 1.5 A
V
GS
= - 0.1 V, f = 1 MHz
V
DD
= - 4 V, R
L
= 2.7
I
D
- 1.5 A, V
GEN
= - 4.5 V, R
g
= 1
0.85
2.5
6
15
22
35
17
30
45
70
35
- 1.5
- 15
- 0.9
25
10
10
15
- 1.3
50
20
nC
ns
T
A
= 25 °C
I
S
= - 1.5 A, V
GS
= 0 V
A
V
ns
nC
ns
I
F
= - 1.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67091
S10-2539-Rev. A, 08-Nov-10
Si8469DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
V
GS
= 5 V thru 2 V
12
I
D
- Drain Current (A)
I
D
- Drain Current (A)
5
4
V
GS
= 1.5 V
9
3
6
2
T
C
= 25 °C
1
3
V
GS
= 1 V
0
0.0
V
GS
= 0.5 V
0.5
1.0
1.5
2.0
2.5
3.0
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.20
V
GS
= 1.2 V
V
GS
= 1.5 V
R
DS(on)
- On-Resistance (Ω)
Transfer Characteristics
1500
0.16
C - Capacitance (pF)
1200
0.12
900
C
iss
0.08
V
GS
= 2.5 V
0.04
V
GS
= 4.5 V
600
C
oss
300
C
rss
0.00
0
3
6
9
12
15
0
0
2
4
6
8
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
6
I
D
= 1.5 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
1.3
5
R
DS(on)
- On-Resistance
V
DS
= 4 V
4
V
DS
= 2 V
3
V
DS
= 6.4 V
2
1.2
V
GS
= 1.5 V; I
D
= 0.3 A
V
GS
= 2.5 V; 4.5 V; I
D
= 1.5 A
(Normalized)
1.1
1.0
V
GS
= 1.2 V, 0.3 A
1
0.9
0
0
3
6
9
12
15
0.8
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67091
S10-2539-Rev. A, 08-Nov-10
www.vishay.com
3
Si8469DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.16
I
D
= 1.5 A
R
DS(on)
- On-Resistance (Ω)
0.12
I
S
- Source Current (A)
10
T
J
= 150 °C
0.08
T
J
= 125 °C
T
J
= 25 °C
1
0.04
T
J
= 25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.7
25
On-Resistance vs. Gate-to-Source Voltage
0.6
I
D
= 250 μA
0.5
Power (W)
V
GS(th)
(V)
20
15
0.4
10
0.3
5
0.2
0.1
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
1
10 ms
100 ms
1 s, 10 s
DC
T
A
= 25 °C
Single Pulse
0.01
0.1
0.1
BVDSS Limited
1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
10
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 67091
S10-2539-Rev. A, 08-Nov-10
Si8469DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
5
1.5
4
I
D
- Drain Current (A)
1.2
Power Dissipation (W)
3
0.9
2
0.6
1
0.3
0
0
25
50
75
100
125
150
0.0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
T
A
- Ambient Temperature (°C)
Current Derating*
Note:
When mounted on 1" x 1" FR4 with full copper.
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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