Si4190ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
D
D
D
APPLICATIONS
• DC/DC Primary Side Switch
• Telecom/Server
• Industrial
G
D
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
100
± 20
18.4
14.6
13
b, c
10.3
b, c
70
5.4
2.7
b, c
30
45
6
3.8
3
b, c
1.9
b, c
- 55 to 150
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Symbol
t
10 s
R
thJA
R
thJF
Typical
33
16
Maximum
42
21
Unit
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Document Number: 63826
S12-0541-Rev. A, 12-Mar-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4190ADY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A
0.76
42
40
19
23
T
C
= 25 °C
5.4
70
1.1
80
80
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 7.5 V, R
g
= 1
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
0.4
V
DS
= 50 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
1970
695
62
44.4
20.7
6.1
9.1
56
1.1
15
11
31
10
12
10
34
10
85
2.2
30
22
60
20
24
20
65
20
ns
67
31
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
½10
V, I
D
= 15 A
V
GS
½7.5
V, I
D
= 12 A
V
GS
½4.5
V, I
D
= 10 A
V
DS
= 15 V, I
D
= 15 A
30
0.0073
0.0078
0.0096
54
0.0088
0.0094
0.0120
S
1.5
100
64
- 5.8
2.8
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 63826
S12-0541-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4190ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
V
GS
= 10 V thru 4 V
56
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
42
6
T
C
= 25
°C
28
4
T
C
= 125
°C
2
14
V
GS
= 3 V
V
GS
= 2 V
1.0
2.0
3.0
4.0
5.0
T
C
= - 55
°C
0
0.0
1.0
2.0
3.0
4.0
V
GS
- Gate-to-Source Voltage (V)
5.0
0
0.0
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
0.012
3000
C
iss
Transfer Characteristics
0.011
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
C - Capacitance (pF)
2400
0.010
1800
C
oss
0.009
V
GS
= 7.5 V
0.008
1200
0.007
V
GS
= 10 V
0.006
0
20
40
60
I
D
- Drain Current (A)
80
100
600
C
rss
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
Capacitance
10
I
D
= 10 A
V
GS
= 10 V
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 50 V
1.7
6
V
DS
= 25 V
V
DS
= 75 V
1.4
V
GS
= 4.5 V
4
1.1
2
0.8
0
0
10
20
30
40
Q
g
- Total Gate Charge (nC)
50
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63826
S12-0541-Rev. A, 12-Mar-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4190ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.04
10
I
S
- Source Current (A)
0.03
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
T
J
= 25 °C
I
D
= 15 A
1
0.02
T
J
= 125
°C
0.02
0.1
0.01
0.01
T
J
= 25
°C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
V
SD
- Source-to-Drain Voltage (V)
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
0.4
200
On-Resistance vs. Gate-to-Source Voltage
0.2
160
V
GS(th)
Variance (V)
0
Power (W)
120
- 0.2
I
D
= 5 mA
- 0.4
I
D
= 250 μA
80
- 0.6
40
- 0.8
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
I
DM
Limited
I
D
Limited
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
1
Limited by R
DS(on)
*
10 ms
100 ms
0.1
1s
T
A
= 25 °C
Single Pulse
10 s
BVDSS Limited
DC
100
0.01
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 63826
S12-0541-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4190ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
16
I
D
- Drain Current (A)
12
8
4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
7.5
2.0
6.0
1.6
Power (W)
3.0
Power (W)
0
25
50
75
100
125
150
4.5
1.2
0.8
1.5
0.4
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63826
S12-0541-Rev. A, 12-Mar-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1. Introduction
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