1SMC5.0AT3G Series,
SZ1SMC5.0AT3G Series
1500 Watt Peak Power
Zener Transient Voltage
Suppressors
Unidirectional*
The SMC series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMC series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
SURMETIC
package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
Features
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PLASTIC SURFACE MOUNT
ZENER TRANSIENT
VOLTAGE SUPPRESSORS
5.0−78 VOLTS
1500 WATT PEAK POWER
SMC
CASE 403
PLASTIC
Working Peak Reverse Voltage Range
−
5.0 V to 78 V
Standard Zener Breakdown Voltage Range
−
6.7 V to 91.25 V
Peak Power
−
1500 W @ 1 ms
ESD Rating of Class 3 (> 16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Maximum Temperature Coefficient Specified
Response Time is Typically < 1 ns
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available**
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
Cathode
Anode
MARKING DIAGRAM
AYWW
Gxx
G
G
A
Y
WW
Gxx
G
= Assembly Location
= Year
= Work Week
= Device Code (Refer to page 3)
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
1SMCxxxAT3G
SZ1SMCxxxAT3G
Package
SMC
(Pb−Free)
SMC
(Pb−Free)
Shipping
†
2,500 /
Tape & Reel
2,500 /
Tape & Reel
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
LEADS:
Modified L−Bend providing more contact area to bond pads
POLARITY:
Cathode indicated by molded polarity notch
MOUNTING POSITION:
Any
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Bidirectional devices will not be available in this series.
DEVICE MARKING INFORMATION
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
February, 2012
−
Rev. 8
1
Publication Order Number:
1SMC5.0AT3/D
1SMC5.0AT3G Series, SZ1SMC5.0AT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
= 25C, Pulse Width = 1 ms
DC Power Dissipation @ T
L
= 75C
Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T
A
= 25C
Derate Above 25C
Thermal Resistance from Junction−to−Ambient
Forward Surge Current (Note 4) @ T
A
= 25C
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
P
D
R
qJA
I
FSM
T
J
, T
stg
Value
1500
4.0
54.6
18.3
0.75
6.1
165
200
−65
to +150
Unit
W
W
mW/C
C/W
W
mW/C
C/W
A
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 x 1000
ms,
non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless
otherwise noted, V
F
= 3.5 V Max @ I
F
= 100 A) (Note 5)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
I
PP
5. 1/2 sine wave or equivalent, PW = 8.3 ms non−repetitive duty
cycle
Uni−Directional TVS
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2
1SMC5.0AT3G Series, SZ1SMC5.0AT3G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
V
RWM
(Note 6)
V
5.0
6.0
6.5
7.5
8.0
9.0
10
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
48
51
54
58
60
64
70
75
78
Breakdown Voltage
I
R
@ V
RWM
mA
1000
1000
500
100
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Min
6.4
6.67
7.22
8.33
8.89
10
11.1
13.3
14.4
15.6
16.7
17.8
18.9
20
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40
44.4
47.8
53.3
56.7
60
64.4
66.7
71.1
77.8
83.3
86.7
V
BR
V
(Note 7)
Nom
6.7
7.02
7.6
8.77
9.36
10.55
11.7
14
15.15
16.4
17.6
18.75
19.9
21.05
23.35
25.65
28.1
30.4
32.75
35.05
38.65
42.1
46.75
50.3
56.1
59.7
63.15
67.8
70.2
74.85
81.9
87.7
91.25
Max
7.0
7.37
7.98
9.21
9.83
11.1
12.3
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
58.9
62.7
66.3
71.2
73.7
78.6
86
92.1
95.8
@ I
T
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
C
@ I
PP
(Note 8)
V
C
V
9.2
10.3
11.2
12.9
13.6
15.4
17
19.9
21.5
23.2
24.4
26
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
77.4
82.4
87.1
93.6
96.8
103
113
121
126
I
PP
A
163
145.6
133.9
116.3
110.3
97.4
88.2
75.3
69.7
64.7
61.5
57.7
53.3
51.4
46.3
42.2
38.6
35.6
33
31
28.1
25.8
32.2
21.6
19.4
18.2
17.2
16
15.5
14.6
13.3
12.4
11.4
Device*
1SMC5.0AT3G
1SMC6.0AT3G
1SMC6.5AT3G
1SMC7.5AT3G
1SMC8.0AT3G
1SMC9.0AT3G
1SMC10AT3G
1SMC12AT3G
1SMC13AT3G
1SMC14AT3G
1SMC15AT3G
1SMC16AT3G
1SMC17AT3G
1SMC18AT3G
1SMC20AT3G
1SMC22AT3G
1SMC24AT3G
1SMC26AT3G
1SMC28AT3G
1SMC30AT3G
1SMC33AT3G
1SMC36AT3G
1SMC40AT3G
1SMC43AT3G
1SMC48AT3G
1SMC51AT3G
1SMC54AT3G
1SMC58AT3G
1SMC60AT3G
1SMC64AT3G
1SMC70AT3G
1SMC75AT3G
1SMC78AT3G
Device
Marking
GDE
GDG
GDK
GDP
GDR
GDV
GDX
GEE
GEG
GEK
GEM
GEP
GER
GET
GEV
GEX
GEZ
GFE
GFG
GFK
GFM
GFP
GFR
GFT
GFX
GFZ
GGE
GGG
GGK
GGM
GGP
GGR
GGT
6. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the DC or continuous peak operating voltage level.
7. V
BR
measured at pulse test current I
T
at an ambient temperature of 25C.
8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data
−
1500 Watt at the beginning of this group.
*Include SZ-prefix devices where applicable.
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3
1SMC5.0AT3G Series, SZ1SMC5.0AT3G Series
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
t
r
10
ms
100
VALUE (%)
PEAK VALUE - I
PP
I
PP
2
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
OF I
PP
.
P
pk
, PEAK POWER (kW)
10
HALF VALUE -
50
t
P
1
0.1
ms
1
ms
10
ms
100
ms
t
P
, PULSE WIDTH
1 ms
10 ms
0
0
1
2
t, TIME (ms)
3
4
Figure 1. Pulse Rating Curve
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T = 25
C
A
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
1000
I
T
, TEST CURRENT (AMPS)
500
200
100
50
20
10
5
2
1
0.3
T
L
= 25C
t
P
= 10
ms
Figure 2. Pulse Waveform
V
BR
(NOM) = 6.8 TO 13 V
20 V
43 V
24 V
75 V
120 V
180 V
0.5 0.7 1
2
3
5
7
10
20
30
T
A
, AMBIENT TEMPERATURE (C)
DV
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR
(NOM) (VOLTS)
Figure 3. Pulse Derating Curve
Figure 4. Dynamic Impedance
UL RECOGNITION
The entire series has
Underwriters Laboratory
Recognition
for the classification of protectors (QVGQ2)
under the UL standard for safety 497B and File #E210057.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric Voltage-Withstand
test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
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4
1SMC5.0AT3G Series, SZ1SMC5.0AT3G Series
APPLICATION NOTES
Response Time
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMC series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
Duty Cycle Derating
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms
pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
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