BSS84LT1, SBSS84LT1
Power MOSFET
Single P-Channel SOT-23
-50 V, 10
W
•
SOT−23 Surface Mount Package Saves Board Space
•
AEC Q101 Qualified
−
SBSS84LT1
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Drain Current
Continuous @ T
A
= 25°C
Pulsed Drain Current (t
p
≤
10
ms)
Total Power Dissipation @ T
A
= 25°C
Operating and Storage Temperature
Range
Thermal Resistance
−
Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DSS
V
GS
I
D
Value
50
±
20
130
520
225
−
55 to
150
556
260
mW
°C
°C/W
°C
3
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V
(BR)DSS
−50
V
Unit
Vdc
Vdc
mA
R
DS(ON)
MAX
10
W
@ 10 V
P−Channel
3
I
DM
P
D
T
J
, T
stg
R
qJA
T
L
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
PD MG
G
1
Gate
PD
M
G
2
Source
= Specific Device Code
= Date Code
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BSS84LT1G
SBSS84LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
March, 2012
−
Rev. 7
1
Publication Order Number:
BSS84LT1/D
BSS84LT1, SBSS84LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=
−250
mAdc)
Zero Gate Voltage Drain Current
(V
DS
=
−25
Vdc, V
GS
= 0 Vdc)
(V
DS
=
−50
Vdc, V
GS
= 0 Vdc)
(V
DS
=
−50
Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
Gate−Body Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1)
Gate−Source Threaded Voltage (V
DS
= V
GS
, I
D
=
−250
mA)
Static Drain−to−Source On−Resistance (V
GS
=
−5.0
Vdc, I
D
=
−100
mAdc)
Transfer Admittance (V
DS
=
−25
Vdc, I
D
=
−100
mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
V
DD
=
−40
Vdc, I
D
=
−0.5
A,
V
GS
=
−10
V
V
DD
=
−15
Vdc, I
D
=
−2.5
Adc,
R
L
= 50
W
t
d(on)
t
r
t
d(off)
t
f
Q
T
−
−
−
−
−
3.6
9.7
12
1.7
2.2
−
−
−
−
−
nC
ns
V
DS
= 5.0 Vdc
V
DS
= 5.0 Vdc
V
DG
= 5.0 Vdc
C
iss
C
oss
C
rss
−
−
−
36
17
6.5
−
−
−
pF
V
GS(th)
R
DS(on)
|y
fs
|
−0.9
−
50
−
4.7
−
−2.0
10
−
Vdc
W
mS
V
(BR)DSS
I
DSS
−50
−
−
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
−
−
−
−
−
−
−
−
−0.1
−15
−60
±10
I
GSS
nAdc
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
V
GS
= 0 V, I
S
=
−130
mA
I
S
I
SM
V
SD
−
−
−
−
−
−
−0.130
−0.520
−2.2
V
A
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
V
DS
= 10 V
−I
D
, DRAIN CURRENT (AMPS)
0.5
- 55°C
0.4
0.3
0.2
0.1
0
150°C
25°C
−I
D
, DRAIN CURRENT (AMPS)
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
6
7
8
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-2.5 V
-2.25 V
9
10
-2.75 V
-3.0 V
T
J
= 25°C
V
GS
= -3.5 V
-3.25 V
1
1.5
2
2.5
3
3.5
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
4
Figure 1. Transfer Characteristics
Figure 2. On−Region Characteristics
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2
BSS84LT1, SBSS84LT1
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
9
V
GS
= -4.5 V
8
7
6
5
4
3
2
0
0.1
0.2
0.3
0.4
0.5
0.6
-I
D
, DRAIN CURRENT (AMPS)
-55°C
25°C
150°C
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
0
0.1
0.2
0.3
0.4
0.5
0.6
-I
D
, DRAIN CURRENT (AMPS)
-55°C
25°C
V
GS
= -10 V
150°C
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
- 55
V
GS
= -4.5 V
I
D
= -0.13 A
V
GS
= -10 V
I
D
= -0.52 A
-8
-7
-6
-5
-4
-3
-2
-1
0
0
500
1000
1500
2000
I
D
= -0.5 A
V
DS
= -40 V
T
J
= 25°C
-5
45
95
145
T
J
, JUNCTION TEMPERATURE (°C)
Q
T
, TOTAL GATE CHARGE (pC)
Figure 5. On−Resistance Variation with Temperature
Figure 6. Gate Charge
1
I
D
, DRAIN CURRENT (AMPS)
0.1
T
J
= 150°C
25°C
-55°C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
-V
SD
, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
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3
BSS84LT1, SBSS84LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
SEE VIEW C
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
q
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your local
Sales Representative
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4
BSS84LT1/D
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