BAS19L, NSVBAS19L,
BAS20L, SBAS20L, BAS21L,
SBAS21L, BAS21DW5,
SBAS21DW5
High Voltage
Switching Diode
Features
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•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
•
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
BAS19, NSVBAS19
BAS20, SBAS20
BAS21, SBAS21
Repetitive Peak Reverse Voltage
BAS19, NSVBAS19
BAS20, SBAS20
BAS21, SBAS21
Continuous Forward Current
Peak Forward Surge Current
Junction and Storage Temperature
Range
Power Dissipation (Note 1)
Electrostatic Discharge
Symbol
V
R
Value
120
200
250
120
200
250
200
625
−55
to
+150
385
HM < 500
MM < 400
Unit
Vdc
HIGH VOLTAGE
SWITCHING DIODE
SOT−23
3
CATHODE
SC−88A
5
CATHODE
4
CATHODE
1
ANODE
3
ANODE
1
ANODE
V
RRM
Vdc
MARKING DIAGRAMS
3
1
3
Jx M
G
G
1
2
I
F
I
FM(surge)
T
J
, T
stg
P
D
ESD
mAdc
mAdc
°C
mW
V
V
2
SOT−23 (TO−236)
CASE 318
STYLE 8
5
3
1
SC−88A (SOT−353)
CASE 419A
x
P
R
S
M
G
4
Jx M
G
G
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
= P, R, or S
= BAS19L, NSVBAS19L
= BAS20L, SBAS20L
= BAS21L, SBAS21L or
BAS21DW5, SBAS21DW5
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
September, 2012
−
Rev. 14
1
Publication Order Number:
BAS19LT1/D
BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5,
SBAS21DW5
THERMAL CHARACTERISTICS (SOT−23)
Characteristic
Total Device Dissipation FR−5 Board
(Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance
Junction−to−Ambient (SOT−23)
Total Device Dissipation Alumina Substrate
(Note 3)
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
THERMAL CHARACTERISTICS (SC−88A)
Characteristic
Power Dissipation (Note 4)
Thermal Resistance
−
Junction−to−Ambient
Derate Above 25°C
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
2. FR−5 = 1.0
0.75
0.062 in.
3. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
R
qJA
Max
385
328
3.0
150
−55
to +150
Unit
mW
°C/W
mW/°C
°C
°C
T
Jmax
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Voltage Leakage Current
(V
R
= 100 Vdc)
(V
R
= 150 Vdc)
(V
R
= 200 Vdc)
(V
R
= 100 Vdc, T
J
= 150°C)
(V
R
= 150 Vdc, T
J
= 150°C)
(V
R
= 200 Vdc, T
J
= 150°C)
Reverse Breakdown Voltage
(I
BR
= 100
mAdc)
(I
BR
= 100
mAdc)
(I
BR
= 100
mAdc)
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
Diode Capacitance (V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time (I
F
= I
R
= 30 mAdc, I
R(REC)
= 3.0 mAdc, R
L
= 100)
BAS19, NSVBAS19
BAS20, SBAS20
BAS21, SBAS21
BAS19
BAS20, SBAS20
BAS21, SBAS21
BAS19, NSVBAS19
BAS20, SBAS20
BAS21, SBAS21
Symbol
I
R
Min
−
−
−
−
−
−
120
200
250
−
−
−
−
Max
0.1
0.1
0.1
100
100
100
−
−
−
Vdc
1.0
1.25
5.0
50
pF
ns
Unit
mAdc
V
(BR)
Vdc
V
F
C
D
t
rr
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2
BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5,
SBAS21DW5
820
W
+10 V
2.0 k
100
mH
0.1
mF
D.U.T.
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
90%
I
R
I
R(REC)
= 3.0 mA
OUTPUT PULSE
(I
F
= I
R
= 30 mA; MEASURED
at I
R(REC)
= 3.0 mA)
I
F
0.1
mF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 30 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 30 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
150°C
IF, FORWARD CURRENT (mA)
125°C
10
85°C
55°C
25°C
10 150°C
IR , REVERSE CURRENT (μA)
125°C
1.0
85°C
0.1
55°C
0.01
25°C
0.001
20
1.0
-55°C
-40°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
F
, FORWARD VOLTAGE (V)
0.8
0.9
1.0
50
80
200
170
110
140
V
R
, REVERSE VOLTAGE (V)
230
260
Figure 2. V
F
vs. I
F
Figure 3. I
R
vs. V
R
1.6
Cap
CD, DIODE CAPACITANCE (pF)
1.4
1.2
1.0
0.8
0.6
0.4
0
1
2
3
4
5
6
7
8
V
R
, REVERSE VOLTAGE (V)
Figure 4. Capacitance
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3
BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5,
SBAS21DW5
ORDERING INFORMATION
Device
BAS19LT1G
BAS19LT3G
NSVBAS19LT1G*
BAS20LT1G
BAS20LT3G
SBAS20LT1G*
BAS21LT1G
SBAS21LT1G*
BAS21LT3G
SBAS21LT3G*
BAS21DW5T1G
SBAS21DW5T1G*
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SC−88A
(Pb−Free)
SC−88A
(Pb−Free)
Shipping
†
3000 / Tape & Reel
10000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
10000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
10000 / Tape & Reel
10000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
http://onsemi.com
4
BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5,
SBAS21DW5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
SEE VIEW C
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
q
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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