MwT-0206S-A9N2/0206Z-A9N2
2.0 – 6.0 GHz Low Noise Amplifier Module
Preliminary Data Sheet
June 2007
Features:
•
•
•
•
1.0 dB Typ Noise Figure
15 dB Typ Small Signal Gain
15 dBm Typ P1dB
1.7:1 Typ VSWR
Description:
The MwT-0206S-A9N2/0206Z-A9N2 is a low noise open-carrier amplifier module operating between 2 and 6 GHz.
Its input and output ports are matched to 50
Ω
impedance. The substrates for the input and the output matching
circuits are ceramic. They are mounted on metal carriers. The module can be easily mounted onto the housing of a
connectorized amplifier. The noise figure is 1.0 dB. Typical small signal gain is 15 dB. The power output at 1dB
compression point is 15 dBm. The input and the output VSWR are 1.7:1.
Electrical Specifications:
SYMBOL
FREQ
SSG
NF
GOF
GOT
P-1dB
PSAT
P-1/T
IP3
2
nd
HAR
VSWR
ISO
VDD
IDD
PARAMETERS
Vds=8.0V, Ta=25
°
C, Z0=50 ohm
Unit
GHz
dB
dB
dB
+/- dB
dB/°C
dBm
dBm
dB/°C
dBm
dBc
--
dB
+V
mA
Min
2.0
12.5
Typ
15.0
1.0
0.9
2.0
-0.012
15.0
18.0
-0.008
25.0
-21
1.7:1
-17.0
8.0
50
Max
6.0
1.4
1.2
2.5
Frequency Range
Small Signal Gain
Noise Figure, 2 - 6 GHz
Noise Figure, 3 – 5 GHz
SSG Flatness
SSG Variation over Temperature
Output Power at 1 dB Compression
Output Power at 6 dB Compression
P-1dB Variation over Temperature
Third Order Intercept Point
2
nd
Harmonic @ Pout=15 dBm
Input/Output VSWR
Reverse Isolation
Power Supply Voltage
Small Signal Module Current
13.0
2.0:1
8.1
70
7.9
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Page 1 of 3, Updated 6/07
MwT-0206S-A9N2/0206Z-A9N2
2.0 – 6.0 GHz Low Noise Amplifier Module
Preliminary Data Sheet
June 2007
Typical RF Performance:
Gain @ 25C
18
17
16
15
14
13
12
2
3
4
Freq. (GHz)
5
Vds=8.0V, Ta=25
°
C, Z0=50 ohm
Noise Figure @ 25C
2.5
2
1.5
1
0.5
0
2
3
4
Freq. (GHz)
5
6
Gain (dB)
6
P1dB @ 25C
18
17
16
15
14
13
12
2
3
4
Freq. (GHz)
5
6
NF (dB)
Return Loss @ 25C
0
Ret. Loss
-5
-10
-15
-20
2
3
4
Freq. (GHz)
5
6
S11
S22
P1dB (dBm)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Page 2 of 3, Updated 6/07
MwT-0206S-A9N2/0206Z-A9N2
2.0 – 6.0 GHz Low Noise Amplifier Module
Preliminary Data Sheet
June 2007
Package Outline:
Construction:
The 15 mil alumina substrates and 10 mil copper FET ridge are brazed onto the 25 mil carrier
using AuGe perform. The GaAs FETs are attached to the Cu ridge using AuSn perform. All
capacitors are attached using AuSn performs. The flanges are designed to accommodate 0-80
UNF-2A socket or Fillister head screws on .400 center-to-center hole spacing. The modules are
mechanically and electrically designed to be cascaded.
Notes:
1.
2.
3.
4.
5.
Custom module specifications and/or custom module mechanical configurations are available.
Operating Temperature Range is –55 degrees Celsius to +105 degrees Celsius.
All modules are serialized and shipped with data measured at 25 degrees Celsius. Data includes swept
small signal gain, swept input and output return loss. Noise figure and P1dB are measured in 1 GHz
increments. Special module testing is available.
Test Fixtures are available.
Microwave Technology reserves the right to ship modules with performance above the typical
specification.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Page 3 of 3, Updated 6/07
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
