MUN2214, MMUN2214L,
MUN5214, DTC114YE,
DTC114YM3, NSBC114YF3
Digital Transistors (BRT)
R1 = 10 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
PIN 1
BASE
(INPUT)
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PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
•
•
•
•
MARKING DIAGRAMS
SC−59
CASE 318D
STYLE 1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
6
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
XX MG
G
1
XXX MG
G
1
XX MG
G
1
XX M
1
XX M
1
XM 1
XXX
M
G
SOT−23
CASE 318
STYLE 6
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
November, 2013
−
Rev. 3
1
Publication Order Number:
DTC114Y/D
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
Table 1. ORDERING INFORMATION
Device
MUN2214T1G, SMUN2214T1G
MUN2214T3G, SMUN2214T3G
MMUN2214LT1G, SMMUN2214LT1G
MUN5214T1G, SMUN5214T1G
DTC114YET1G, SDTC114YET1G
DTC114YM3T5G, NSVDTC114YM3T5G
NSBC114YF3T5G
Part Marking
8D
8D
A8D
8D
8D
8D
J
Package
SC−59
(Pb−Free)
SC−59
(Pb−Free)
SOT−23
(Pb−Free)
SC−70/SOT−323
(Pb−Free)
SC−75
(Pb−Free)
SOT−723
(Pb−Free)
SOT−1123
(Pb−Free)
Shipping
†
3000 / Tape & Reel
10000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
8000 / Tape & Reel
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
−50
(1) (2) (3) (4) (5)
(1) SC−75 and SC−70/SOT−323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm
2
, 1 oz. copper trace
(5) SOT−723; Minimum Pad
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC−59) (MUN2214)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2214L)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5214)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTC114YE)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTC114YM3)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P
D
260
600
2.0
4.8
480
205
−55
to +150
mW
mW/°C
°C/W
°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P
D
200
300
1.6
2.4
600
400
−55
to +150
mW
mW/°C
°C/W
°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P
D
202
310
1.6
2.5
618
403
280
332
−55
to +150
mW
mW/°C
°C/W
°C/W
°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P
D
246
400
2.0
3.2
508
311
174
208
−55
to +150
mW
mW/°C
°C/W
°C/W
°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P
D
230
338
1.8
2.7
540
370
264
287
−55
to +150
mW
mW/°C
°C/W
°C/W
°C
Symbol
Max
Unit
R
qJA
R
qJL
T
J
, T
stg
R
qJA
R
qJL
T
J
, T
stg
R
qJA
R
qJL
T
J
, T
stg
R
qJA
T
J
, T
stg
R
qJA
T
J
, T
stg
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MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBC114YF3)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
P
D
254
297
2.0
2.4
493
421
193
−55
to +150
mW
mW/°C
°C/W
°C/W
°C
Symbol
Max
Unit
R
qJA
R
qJL
T
J
, T
stg
Table 3. ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector
*Emitter
Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100
mA)
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 1.0 mA)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
v
2%.
h
FE
V
CE(sat)
V
i(off)
V
i(on)
V
OL
V
OH
R1
R
1
/R
2
80
−
−
1.4
−
4.9
7.0
0.17
140
−
0.7
0.8
−
−
10
0.21
−
0.25
0.5
−
0.2
−
13
0.25
Vdc
Vdc
Vdc
Vdc
Vdc
kW
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.2
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
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MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
TYPICAL CHARACTERISTICS
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
1000
V
CE
= 10 V
25°C
100
150°C
25°C
0.1
150°C
−55°C
10
−55°C
0.01
0
10
20
30
40
50
1
0.1
I
C
, COLLECTOR CURRENT (mA)
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
3.6
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (V)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
10
−55°C
1
0.1
0.01
25°C
150°C
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (V)
8
9
10
0.001
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
V
in
, INPUT VOLTAGE (V)
10
25°C
−55°C
1
150°C
V
O
= 0.2 V
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
0.1
Figure 6. Input Voltage vs. Output Current
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